VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors CORPORATION VN0610LL / VN10LM FEATURES ORDERING INFORMATION • Low rDS(on) <5Ω Part Package VN0610LL Plastic TO-92 VN10LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS • Switching • Amplification Temperature Range -55oC to +150oC -55oC to +150oC PIN CONNECTIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-226AA) TO-237 1 2 3 1. SOURCE 2. GATE 3. DRAIN 2 1 2 3 1. SOURCE 2. GATE 3. TAB-DRAIN 1 CD5 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS VN0610LL VN10LM VDS Drain-Source Voltage 60 60 VGS Gate-Source Voltage ±30 ±30 ID Continuous Drain Current TA = 25oC 0.28 0.32 TA = 100 oC 0.17 0.2 1.3 1.4 0.8 1.0 0.32 0.4 IDM Pulsed Drain Current 1 TA = 25oC PD Power Dissipation TJ, Tstg Operating Junction & Storage Temperature Range TL Lead Temperature (1/16" from case for 10 sec.) o TA = 100 C -55 to 150 UNITS V A W o 300 C THERMAL RESISTANCE RATINGS SYMBOL RthJA 1 THERMAL RESISTANCE Junction-to-Ambient Pulse width limited by maximum junction temperature. LIMITS VN0610LL VN10LM 156 125 UNITS K/W VN0610LL / VN10LM CORPORATION SPECIFICATIONSa SYMBOL LIMITS PARAMETER TYPb MIN 70 60 MAX UNIT TEST CONDITIONS STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current V 2.3 0.8 2.5 ±100 10 ID = 100µA, VGS = 0V VDS = VGS, I D = 1mA nA µA VGS = ±30V, VDS = 0V VDS = 50V, VGS = 0V TJ = 125oC 500 ID(ON) On-State Drain Currentd rDS(ON) Drain-Source On-Resistancec 1000 750 5 mA 7.5 2.5 5 4.4 9 gFS Forward Transconductancec 230 gOS Common Source Output Conductancec 500 Ciss Input Capacitance 16 60 Coss Output Capacitance 11 25 Crss Reverse Transfer Capacitance 2 5 Turn-On Time 7 10 100 VDS = 10V, VGS = 10V VGS = 5V, I D = 0.2A Ω VGS = 10V, ID = 0.5A TJ = 125oC mS VDS = 10V, ID = 0.5A µS VDS = 5V, ID = 50mA pF VDS = 25V, VGS = 0V, f = 1MHz DYNAMIC SWITCHING tON ns tOFF Turn-Off Time Notes: a. b. c. d. T A = 25oC unless otherwise noted. For design aid only, not subject to production testing. Pulse test; PW = ≤300µS, duty cycle ≤2%. Pulse width limited by maximum junction temperature. 7 10 VDD = 15V, RL = 23Ω, ID = 0.6A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature)