VN2222 Series N-Channel Enhancement-Mode MOS Transistors CORPORATION VN2222 Series FEATURES ORDERING INFORMATION • Low rDS(on) <7.5Ω Part Package VN2222LL Plastic TO-92 VN2222LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS • Switching • Amplification Temperature Range -55oC to +150oC -55oC to +150oC PIN CONNECTIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-226AA) TO-237 1 2 3 1. SOURCE 2. GATE 3. DRAIN 2 1 2 3 1. SOURCE 2. GATE 3. TAB-DRAIN 1 CD5 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS VN2222LL VN2222LM VDS Drain-Source Voltage 60 60 VGS Gate-Source Voltage ±30 ±30 ID Continuous Drain Current IDM Pulsed Drain Current TA = 25oC 0.23 0.26 TA = 100 oC 0.14 0.16 1 1 TA = 25oC 0.8 1 TA = 100 oC 0.32 0.4 1 PD Power Dissipation TJ, Tstg Operating Junction & Storage Temperature Range TL Lead Temperature (1/16" from case for 10 sec.) -55 to 150 UNITS V A W o 300 C THERMAL RESISTANCE RATINGS SYMBOL RthJA 1 THERMAL RESISTANCE Junction-to-Ambient Pulse width limited by maximum junction temperature. LIMITS VN2222LL VN2222LM 156 125 UNITS K/W VN2222 Series CORPORATION SPECIFICATIONSa SYMBOL LIMITS PARAMETER TYPb MIN 70 60 MAX UNIT TEST CONDITIONS STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current V 2.3 0.6 2.5 ±100 10 ID = 100µA, VGS = 0V VDS = VGS, I D = 1mA nA µA VGS = ±20V, VDS = 0V VDS = 48V, VGS = 0V TJ = 125oC 500 ID(ON) On-State Drain Currentc rDS(ON) Drain-Source On-Resistancec 1000 750 5 mA 7.5 2.5 7.5 4.4 13.5 gFS Forward Transconductancec 230 gOS Common Source Output Conductancec 1200 100 VDS = 10V, VGS = 10V VGS = 5V, I D = 0.2A Ω VGS = 10V, ID = 0.5A TJ = 125oC mS VDS = 10V, ID = 0.5A µS VDS = 10V, ID = 0.2A pF VDS = 25V, VGS = 0V, f = 1MHz DYNAMIC Ciss Input Capacitance 16 60 Coss Output Capacitance 11 25 Crss Reverse Transfer Capacitance 2 5 Turn-On Time 7 10 SWITCHING tON ns tOFF Turn-Off Time Notes: a. T A = 25oC unless otherwise noted. b. For design aid only, not subject to production testing. c. Pulse test; PW = ≤300µS, duty cycle ≤2%. 7 10 VDD = 15V, RL = 23Ω, ID = 0.6A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature)