NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS (Units in mm) HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = +25 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 10 mA, ZS = ZOPT ,1TONE • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITTER TRANSISTOR 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2.0 ± 0.2 0.65 2 0.60 V45 • PACKAGE OUTLINE 18 1 3 0.65 1.3 0.65 4 +0.10 0.4 -0.05 DESCRIPTION 0.3 NEC's NE52418 is a low cost NPN GaAs HBT(InGaP) suitable for front end LNA's in L/S band mobile communications applications. The NE52418 is housed in a 4-pin super mini-mold package, making it ideal for high-density design. 0.9 ± 0.1 0 to 0.1 NEC's stringent quality assurance and test procedures ensure the highest reliability performance +0.10 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Emitter 4. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE52418 18 UNITS MIN TYP MAX IEBO Emitter to Base Leakage Current at VEBO = 3 V µA — 0.2 1.0 ICBO Collector to Base Leakage Current at VCBO = 3 V µA — 0.2 1.0 hFE DC Current Gain at VCE = 2 V, IC = 3 mA — 100 140 180 NF Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 Ghz, ZS = ZL = 50 Ω dB — 1.0 1.5 Ga Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 Ghz, dB 14 16 — ZS = ZL = 50 Ω |S21e|2 Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 Ghz dB — 20 — OIP3 Out Third - Order Distortion Intercept Point at VCE = 2 V, dBm — 25 — f = 2 GHz, ZS = ZL = ZOPT, IC = 10 mA, 1 tone California Eastern Laboratories NE52418 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) SYMBOLS PARAMETERS UNITS RATINGS RECOMMENDED OPERATING CONDITIONS (TA = +25°C) VCEO Collector to Emitter Voltage V 5.0 SYMBOLS PARAMETERS VCBO Collector to Base Voltage V 3.0 VCE Collector to Emitter Voltage VEBO Emitter to Base Voltage V 3.0 IC PIN IC Collector Current mA 40 IB Base Current mA 0.3 PT Total Power Dissipation mW 150 Tj Junction Temperature °C +125 TSTG Storage Temperature °C -65 to +125 UNITS MIN. TYP. MAX. V 1.5 2.0 3.0 Collector Current mA – – 30 Input Power dBm – – 0 Note: 1. Operation in excess of any of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVE (TA = 25°C) NOISE FIGURE vs. FREQUENCY 1.4 Noise Figure, NF (dB) 1.2 1 0.8 0.6 0.4 0.2 2 V 5 mA 2 V 10 mA 0 0 1 2 3 4 5 6 7 Frequency, F (GHz) TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE52418 VCE = 2.0 V, IC = 3 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 S11 MAG 0.601 0.505 0.438 0.384 0.346 0.328 0.327 0.326 0.344 0.366 0.382 0.402 0.431 0.46 0.516 0.572 0.617 0.664 0.699 0.720 0.728 0.720 0.701 0.643 0.587 S21 ANG -82.0 -98.5 -115.1 -132.3 -148.8 -166.8 178.2 164.7 152.8 140.7 130.2 120.3 110.9 102.2 94.2 87.1 78.8 73.4 66.5 61.6 55.5 49.1 43.4 38.2 36.7 MAG 5.571 4.898 4.405 4.008 3.645 3.333 3.100 2.894 2.708 2.573 2.445 2.320 2.209 2.124 2.023 1.912 1.782 1.663 1.513 1.373 1.228 1.073 0.910 0.737 0.523 S12 ANG 107.2 94.9 83.4 73.6 64.2 54.9 46.7 38.3 30.2 22.1 14.2 6.2 -2.5 -11.7 -21.2 -31.0 -41.3 -51.2 -61.8 -72.1 -83.1 -34.6 -107.7 -121.2 -137.3 MAG 0.064 0.067 0.073 0.077 0.078 0.083 0.085 0.094 0.099 0.108 0.121 0.128 0146 0.161 0.175 0.191 0.201 0.211 0.210 0.211 0.207 0.196 0.172 0.150 0.119 S22 ANG 47.4 41.0 38.5 38.5 39.2 38.7 41.0 41.7 41.6 41.6 40.7 37.2 35.6 32.0 26.1 19.7 13.7 6.4 -0.7 -9.0 -17.2 -26.2 -33.0 -39.8 -39.1 MAG 0.733 0.669 0.619 0.583 0.550 0.525 0.509 0.502 0.485 0.474 0.457 0.428 0.410 0.398 0.395 0.436 0.475 0.541 0.594 0.636 0.695 0.747 0.789 0.864 0.893 ANG -38.7 -43.7 -48.5 -53.5 -58.7 -64.5 -70.7 -76.9 -84.4 -90.1 -97.9 -107.0 -117.1 -132.9 -151.4 -170.0 172.1 156.3 140.7 127.1 113.6 99.9 86.8 75.9 65.4 NE52418 TYPICAL SCATTERING PARAMETERS, cont. (TA = 25°C) NE52418 VCE = 2.0 V, IC = 10 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 S11 MAG 0.306 0.237 0.191 0.170 0.160 0.167 0.181 0.195 0.216 0.245 0.266 0.295 0.325 0.370 0.423 0.476 0.528 0.580 0.620 0.640 0.651 0.636 0.600 0.516 0.482 S21 ANG -95.3 -111.7 -128.4 -148.2 -168.5 171.7 156.2 144.5 134.5 127.0 117.7 109.6 103.3 96.3 89.5 83.4 76.3 71.2 64.7 60.7 54.1 47.4 42.2 39.5 47.1 MAG 8.717 7.212 6.201 5.469 4.904 4.433 4.093 3.813 3.553 3.372 3.192 3.023 2.897 2.793 2.587 2.579 2.456 2.317 2.180 2.022 1.875 1.685 1.466 1.172 0.802 S12 ANG 91.6 82.2 73.3 65.9 58.7 51.4 44.6 37.7 30.7 23.7 16.8 9.8 2.0 -6.0 -14.5 -23.3 -33.0 -42.3 -52.8 -63.2 -74.8 -88.3 -103.2 -120.4 -139.8 MAG 0.051 0.060 0.067 0.077 0.086 0.094 0.106 0.115 0.126 0.133 0.143 0.152 0.165 0.179 0.188 0.201 0.208 0.210 0.213 0.212 0.205 0.191 0.173 0.145 0.112 S22 ANG 59.1 60.0 55.4 55.5 54.3 53.1 51.6 48.5 45.8 42.2 38.0 35.1 30.8 27.3 21.0 15.5 8.6 2.4 -5.5 -12.6 -20.4 -29.2 -37.2 -42.4 -39.1 MAG 0.556 0.512 0.478 0.451 0.430 0.412 0.398 0.389 0.376 0.363 0.343 0.311 0.293 0.271 0.260 0.292 0.337 0.403 0.461 0.522 0.588 0.660 0.731 0.834 0.891 ANG -37.9 -40.1 -43.7 -47.6 -52.8 -57.5 -63.5 -69.9 -77.3 -82.9 -90.1 -97.6 -106.7 -123.9 -145.1 -166.3 172.9 156.1 141.9 128.6 115.5 103.2 90.1 78.2 56.2 NE52418 VCE = 2.0 V, IC = 20 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 S11 MAG 0.188 0.140 0.117 0.116 0.124 0.146 0.164 0.184 0.207 0.238 0.262 0.292 0.322 0.362 0.412 0.471 0.517 0.565 0.607 0.630 0.635 0.616 0.574 0.476 0.442 S21 ANG -105.5 -124.6 -147.2 -170.3 169.2 150.9 138.1 129.5 124.1 116.7 110.1 102.7 97.6 91.4 85.1 79.6 72.9 68.3 62.5 58.3 51.3 44.7 39.1 37.7 48.7 MAG 9.306 7.618 6.514 5.708 5.092 4.595 4.239 3.929 3.675 3.470 3.278 3.108 2.971 2.857 2.753 2.641 2.513 2.387 2.264 2.091 1.960 1.783 1.571 1.265 0.859 S12 ANG 85.1 76.9 69.1 62.5 56.0 49.1 42.8 36.2 29.6 22.8 16.1 9.5 2.1 -5.7 -13.8 -22.4 -31.4 -40.7 -50.8 -60.7 -72.2 -85.7 -101.2 -119.6 -139.7 MAG 0.049 0.061 0.070 0.081 0.091 0.102 0.112 0.121 0.131 0.145 0.154 0.165 0.174 0.183 0.196 0.203 0.209 0.219 0.213 0.212 0.206 0.196 0.173 0.143 0.107 S22 ANG 63.2 63.4 63.2 61.0 58.6 56.2 52.0 49.2 45.9 42.3 37.9 33.5 27.1 24.6 19.0 13.6 6.2 -0.8 -7.8 -14.5 -22.0 -31.7 -40.0 -45.5 -43.6 MAG 0.489 0.453 0.429 0.415 0.390 0.349 0.361 0.350 0.336 0.323 0.299 0.267 0.246 0.221 0.210 0.243 0.292 0.359 0.424 0.476 0.548 0.619 0.700 0.815 0.887 ANG -35.0 -37.3 -40.1 -44.6 -49.2 -55.5 -51.5 -67.5 -75.1 -81.2 -88.5 -96.6 -105.1 -124.7 -147.6 -171.7 167.0 151.4 137.4 124.7 113.2 101.4 89.7 78.0 66.5 NE52418 PACKAGE DIMENSIONS (Units in mm) PART NUMBER PACKAGE OUTLINE 18 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2 0.65 0.60 V45 2.0 ± 0.2 ORDERING INFORMATION NE52418-T1-A QUANTITY 3 K pcs/Reel Note: 8-mm wide embossed tape, pin 3 (Emitter), pin 4 (Collector) face perforated side of tape. 3 0.65 1.3 0.65 1 4 +0.10 0.4 -0.05 0.3 0.9 ± 0.1 0 to 0.1 +0.10 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Emitter 4. Collector RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL Sales Representative. SOLDERING METHOD Infrared Reflow VPS WAVE SOLDERING PARTIAL HEATING SOLDERING CONDITIONS Package Peak Temperature: 230 ˚C or below Time: 30 seconds or less ( at 210 ˚C) Count: 3, Exposure limit: None1 Package Peak Temperature: 215 ˚C or below Time: 40 seconds or less (at 200 ˚C) Count: 2, Exposure limit: None1 Soldering Bath Temperature: 260 ˚C or below Time: 10 seconds or less (at 200 ˚C) Count: 1, Exposure limit: None1 Pin Temperature: 300 ˚C or below Time: 3 seconds or less (per side of device) Exposure limit: None1 RECOMMENDED CONDITION SYMBOL IR30-00-3 VP15-00-2 WS60-00-1 – Note: 1. After opening the dry pack, keep it in a place below 25 ˚C and 65% RH for the allowable storage period. CAUTION: Do not use different soldering methods together (except for partial heating). PRECAUTION: Avoid high static voltage and electric fields. NE52418 NONLINEAR MODEL 2.1 ± 0.2 SCHEMATIC +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 2.0 ± 0.2 0.65 3 2 0.65 1.3 0.60 0.65 1 4 +0.10 0.4 -0.05 0.3 0.9 ± 0.1 +0.10 0.15 -0.05 0 to 0.1 BJT NONLINEAR MODEL PARAMETERS (1) ADDITIONAL PARAMETERS Parameters NE52418 Parameters Q1 Parameters Q1 IS 7.8e-25 MJC 0.07 CCB 0.02e-12 BF 158 XCJC 0.2 CCE 0.19e-12 NF 1.006 CJS 0 LB 0.83e-9 VAF 1000 VJS 0.75 LC 0.8e-9 0 LE 0.2e-9 IKF 1.95 MJS ISE 6.36e-18 FC 0.5 CCBPKG 0.002e-12 NE 1.92 TF 2e-12 CCEPKG 0.05e-12 3 CBEPK 0.15e-12 BR 1 XTF NR 1 VTF 1 LBX 0.55e-9 VAR 1000 ITF 0.05 LCX 0.1e-9 IKR 1000 PTF 0 LEX 0.05e-9 ISC 0 TR 50e-12 NC 2.0 EG 1.51 RE 1.5 XTB 0 3 RB 7 XTI RBM 1 KF 0 IRB 1000 AF 1 RC 1.2 CJE 0.27 VJE 0.99 MJE 0.21 CJC 0.065e-12 VJC 0.73 MODEL RANGE Frequency: 0.3 to 10 GHz Bias: VCE = 0.7 V to 2 V, IC = 1 mA to 10 mA Date: 02/2002 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 04/22/03 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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