PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 (SOT 23 STYLE) DESCRIPTION NEC’s NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA NE97833 2SA1978 33 UNITS MIN TYP GHz 4.0 5.5 Noise Figure at VCE = -10 V, IC = -3 mA dB Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz dB 2.0 8.0 10.0 20 40 MAX 3.0 hFE Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA ICBO Collector Cutoff Current at VCB = -10 V, IE = 0 µA -0.1 IEBO Emitter Cutoff Current at VBE = -2 V, IC = 0 µA -0.1 C Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz pF RE2 PT Total Power Dissipation mW 0.5 100 1.0 200 Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97833 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V -20 VCEO Collector to Emitter Voltage V -12 VEBO Emitter to Base Voltage V -3 -50 IC Collector Current mA TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +200 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 100 DC Current Gain, HFE SYMBOLS DC CURRENT GAINS VS. COLLECTOR CURRENT VCE = -3 V VCE = -2 V VCE = -1 V 10 1 -0.1 TYPICAL PERFORMANCE CURVES (TA = 25°C) -1.0 -10 -100 -1000 Collector Current, IC (mA) DC POWER DERATING CURVES INSERTION GAIN vs. FREQUENCY FREE AIR 30 Insertion Power Gain, |S21E|2 Total Power Dissipation, PT (mW) 400 300 200 NE97833 100 20 VCE = -10 V IC = -15 mA 10 VCE = 1 V IC = 5 mA 0 -10 0 0 50 100 150 200 100 Ambient Temperature, TA (°C) 300 500 1000 3000 Frequency, f (MHz) GAIN BANDWIDTH vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 14 14 f = 1 GHz f = 1 GHz 12 VCE = -10 V 10 8 6 VCE = -3 V 4 VCE = -1 V 2 Insertion Power Gain, |S21E|2 Gain Bandwidth Product, fT (GHz) 200 12 VCE = -10 V 10 8 6 VCE = -3 V 4 VCE = -1 V 2 0 0 1 10 Collector Current, IC (mA) 100 1 10 Collector Current, IC (mA) 100 NE97833 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE VS. COLLECTOR CURRENT DC CURRENT GAIN VS. COLLECTOR CURRENT 6 100 VCE = 10 V f = 1 GHz Noise Figure, NF DC Current Gain, HFE VCE = -10 V 10 4 2 0 1.0 -0.1 -1.0 -100 -10 -1000 10 1 Collector Current, IC (mA) 100 Collector Current, IC (mA) SWITCHING CHARACTERISTICS UNITS VIN = 1 V TYP Turn-on Delay Time ns 1.10 Rise Time ns 0.77 ns 0.40 ns 0.79 UNITS tON (delay) tr PARAMETERS tOFF (delay) Turn-off Delay Time tf Fall Time SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 RC2 VIN VOUT VIN RS 20 ns RL2 tON (delay) RL1 tr 50 Ω Sampling Oscilloscope VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS (Ω) RC (Ω) RL1 (Ω) RL2 (Ω) RE (Ω) VEE (V) VCC (V) 160 1K 200 250 2.7 K 27 26.3 tf tOFF (delay) NE97833 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 90˚ 1 0.8 1.5 0.6 S21 2 45˚ 135˚ 0.4 3 4 5 0.2 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 S12 10 20 50 10 20 -50 S11 180˚ 0.1 0.2 0.3 0.4 0.5 0˚ -20 -10 S22 2.5 -5 -4 -0.2 -3 -0.4 -2 -0.6 -1.5 -0.8 NE97833 VCE = -8 V, IC = -10 mA 5.0 225˚ -1 315˚ 270˚ VCE = -5 V, IC = -10 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 S11 MAG 0.274 0.273 0.278 0.308 0.352 0.402 0.449 0.506 0.527 S21 S12 S22 K MAG1 ANG -149.2 -177.0 169.8 144.6 125.0 109.1 96.4 79.7 71.1 MAG 6.102 4.037 3.303 2.311 1.808 1.496 1.281 1.023 0.908 ANG 96.9 82.0 74.5 58.7 45.3 33.5 23.6 9.1 -1.8 MAG 0.063 0.093 0.114 0.170 0.229 0.288 0.345 0.458 0.574 ANG 68.1 70.1 70.3 68.1 63.9 58.3 52.4 40.7 27.4 MAG 0.493 0.432 0.412 0.381 0.362 0.359 0.364 0.350 0.246 ANG -30.9 -32.2 -34.5 -44.8 -59.4 -75.9 -91.0 -113.5 -138.8 0.97 1.07 1.09 1.08 1.03 0.99 0.95 0.91 0.92 (dB) 19.9 14.7 12.8 9.6 7.8 7.2 5.7 3.5 2.0 -140.2 -171.6 173.7 145.9 125.3 109.0 96.4 79.9 71.7 6.426 4.270 3.496 2.445 1.911 1.582 1.353 1.076 0.950 98.5 83.5 76.0 60.5 47.2 35.6 25.5 10.7 -0.4 0.060 0.089 0.109 0.162 0.219 0.276 0.333 0.445 0.563 68.7 70.6 70.9 60.5 65.0 59.8 54.2 42.9 30.2 0.523 -29.0 0.463 -30.1 0.443 -32.3 0.515 -43.9 0.393 -55.2 0.388 -70.6 0.392 -85.0 0.379 -106.3 0.278 -127.3 0.95 1.05 1.08 1.11 1.02 0.98 0.94 0.90 0.90 20.3 15.4 13.4 9.8 8.4 7.6 6.1 3.8 2.3 -80.8 -121.8 -143.5 173.5 142.8 120.2 103.4 81.7 69.6 4.097 3.325 2.864 2.107 1.669 1.382 1.179 0.934 0.844 116.8 94.8 84.2 64.5 49.0 36.0 25.6 11.9 3.0 0.076 0.094 0.106 0.140 0.186 0.241 0.302 0.433 0.575 55.1 53.5 55.4 69.0 62.8 61.5 57.9 47.8 34.3 0.697 -28.4 0.600 -32.6 0.564 -35.2 0.411 -39.4 0.494 -56.1 0.490 -70.2 0.496 -83.7 0.484 -105.8 0.382 -128.7 0.65 0.89 1.00 1.07 1.08 1.00 0.93 0.87 0.90 17.3 15.5 14.3 10.2 7.8 7.4 5.9 3.3 1.7 -153.1 179.7 166.8 141.5 122.3 107.1 95.0 79.5 72.1 6.846 4.489 3.664 2.554 1.992 1.648 1.410 1.121 0.984 96.2 82.4 75.4 60.6 47.7 36.2 26.3 11.3 -0.2 0.058 0.087 0.108 0.163 0.220 0.276 0.331 0.440 0.555 73.2 74.0 73.7 70.6 66.0 60.4 54.6 43.4 31.0 0.506 -27.0 0.456 -27.9 0.439 -30.1 0.441 -41.8 0.393 -52.7 0.387 -68.0 0.389 -82.1 0.377 -102.6 0.277 -121.3 0.99 1.06 1.07 1.05 1.01 0.97 0.94 0.89 0.89 20.7 15.6 13.7 10.6 8.9 7.8 6.3 4.1 2.5 VCE = -8 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.252 0.240 0.243 0.272 0.316 0.369 0.418 0.479 0.503 VCE = -10 V, IC = -15 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.555 0.399 0.348 0.314 0.342 0.393 0.446 0.515 0.529 VCE = -10 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.214 0.215 0.221 0.254 0.300 0.352 0.402 0.463 0.489 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE97833 OUTLINE DIMENSIONS (Units in mm) OUTLINE 33 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2.4 2 2.9 ± 0.2 0.95 2 1.9 3 3 +0.10 0.4 -0.05 (ALL LEADS) 1.9 0.95 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1.1 to 1.4 0.8 0 to 0.1 1 1.0 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE97833-T1B-A 3000 Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE 3-174 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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