CE LL4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES Mini-MELF . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4448 MECHANICAL DATA Dimensions in inches and (millimeters) . Case: MinMelf glass case(SOD- 80) . Weight: Approx. 0.05gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Reverse voltage Units Value VR 75 Volts VRM 100 Volts IAV 1501) mA Surge forward current at t<1S and TJ=25 IFSM 500 mW Power dissipation at TA=25 Ptot 5001) mW TJ 175 TSTG -65 to + 175 Peak reverse voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F 50Hz Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol VF Min. Typ. at IF=5mA VF 1 V Leakage current at VR=20V IR 25 nA at VR=75V IR 5 A IR 50 A Junction capacitance at VR=VF=0V CJ 4 pF Reverse breakdown voltage tested with 100 A pluse V(BR)R at VR=20V, TJ=150 Reverse recovery time from IF=10mA to IR=1mA, 0.72 Units Forward voltage at IF=10mA 0.62 Max. 100 V 4 trr V ns VR=6V, RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V R 3501) JA K/W 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE LL4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES LL4448 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE LL4448 CHENYI ELECTRONICS FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3