CHENYI LL4448

CE
LL4448
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FEATURES
Mini-MELF
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4448
MECHANICAL DATA
Dimensions in inches and (millimeters)
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbol
Reverse voltage
Units
Value
VR
75
Volts
VRM
100
Volts
IAV
1501)
mA
Surge forward current at t<1S and TJ=25
IFSM
500
mW
Power dissipation at TA=25
Ptot
5001)
mW
TJ
175
TSTG
-65 to + 175
Peak reverse voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25
and F 50Hz
Junction temperature
Storage temperature range
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbol
VF
Min.
Typ.
at IF=5mA
VF
1
V
Leakage current
at VR=20V
IR
25
nA
at VR=75V
IR
5
A
IR
50
A
Junction capacitance at VR=VF=0V
CJ
4
pF
Reverse breakdown voltage tested with 100 A pluse
V(BR)R
at VR=20V, TJ=150
Reverse recovery time from IF=10mA to IR=1mA,
0.72
Units
Forward voltage
at IF=10mA
0.62
Max.
100
V
4
trr
V
ns
VR=6V, RL=100
Thermal resistance junction to ambient
Rectification efficience at f=100MHz,VRF=2V
R
3501)
JA
K/W
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
LL4448
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4448
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
VERSUS FORWARD CURRENT
FIG.4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
LL4448
CHENYI ELECTRONICS
FIG.5-RECTIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
SMALL SIGNAL SWITCHING DIODE
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3