Amplifier Transistors BC546, B BC547, A, B, C BC548, A, B, C NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 BC548 Unit Collector–Emitter Voltage VCEO 65 45 30 Vdc Collector–Base Voltage VCBO 80 50 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO 65 45 30 — — — — — — V Collector–Base Breakdown Voltage (IC = 100 µAdc) BC546 BC547 BC548 V(BR)CBO 80 50 30 — — — — — — V Emitter–Base Breakdown Voltage (IE = 10 A, IC = 0) BC546 BC547 BC548 V(BR)EBO 6.0 6.0 6.0 — — — — — — V — — — — 0.2 0.2 0.2 — 15 15 15 4.0 nA Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C) Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 2 ICES BC546 BC547 BC548 BC546/547/548 1 µA Publication Order Number: BC546/D BC546, B BC547, A, B, C BC548, A, B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC547A/548A BC546B/547B/548B BC548C — — — 90 150 270 — — — (IC = 2.0 mA, VCE = 5.0 V) BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C 110 110 110 110 200 420 — — — 180 290 520 450 800 800 220 450 800 (IC = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C — — — 120 180 300 — — — — — — 0.09 0.2 0.3 0.25 0.6 0.6 — 0.7 — 0.55 — — — 0.7 0.77 150 150 150 300 300 300 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) — V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 10 — pF 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 — — — 2.0 2.0 2.0 10 10 10 Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, f = 1.0 kHz, ∆f = 200 Hz) hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C — NF BC546 BC547 BC548 Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V. http://onsemi.com 2 dB BC546, B BC547, A, B, C BC548, A, B, C 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 50 70 100 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 100 Figure 4. Base–Emitter Temperature Coefficient 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) BC547/BC548 Figure 5. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 50 BC546, B BC547, A, B, C BC548, A, B, C BC547/BC548 TA = 25°C VCE = 5 V TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 50 100 200 50 100 200 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 -1.0 -1.4 -1.8 θVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 Figure 9. Collector Saturation Region 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient BC546 f, T CURRENT-GAIN - BANDWIDTH PRODUCT 40 C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 4.0 2.0 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 4 BC546, B BC547, A, B, C BC548, A, B, C PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 5 BC546, B BC547, A, B, C BC548, A, B, C Notes http://onsemi.com 6 BC546, B BC547, A, B, C BC548, A, B, C Notes http://onsemi.com 7 BC546, B BC547, A, B, C BC548, A, B, C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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