BFN 23 PNP High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung PNP 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BFN 23 Collector-Emitter-voltage B open - VCE0 250 V Collector-Base-voltage E open - VCB0 250 V Collector-Emitter-voltage RBE = 2.7 kS - VCER 250 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 50 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 100 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V - ICB0 – – 100 nA IE = 0, - VCB = 200 V, Tj = 150/C - ICB0 – – 20 :A Collector-Base cutoff current – Kollektorreststrom - VCB = 250 V, RBE = 2.7 kS - ICBR – – 1 :A - VCB = 250 V, RBE = 2.7 kS, Tj = 150/C - ICBR – – 50 :A - IEB0 – – 10 :A Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 12 01.11.2003 High Voltage Transistors BFN 23 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – 500 mV – – 1V hFE 50 – – fT – 100 MHz – – 0.8 pF – Collector saturation volt. – Kollektor-Sättigungsspg. 1) - IC = 10 mA, - IB = 1 mA - VCEsat Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 10 mA, - IB = 1 mA - VBEsat DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 20 V, - IC = 25 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 10 V, - IC = 10 mA, f = 20 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 30 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking - Stempelung CCB0 420 K/W 2) RthA BFN 22 BFN 23 = HC ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 13