BC817K / BC818K BC817K / BC818K Surface Mount Low Rth Si-Epi-Planar Transistors Si-Epi-Planar Low Rth Transistoren für die Oberflächenmontage NPN NPN Version 2011-10-26 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 500 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC817K BC818K Collector-Base-volt. – Kollektor-Basis-Spannung C open VCBO 50 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V 25 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5V Power dissipation – Verlustleistung Tsp ≤ 115°C Ptot 500 mW Collector current – Kollektorstrom (dc) IC 500 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1A Base current – Basisstrom IB 100 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS +150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 – – – 250 400 630 40 – – – – 0.7 V – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 500 mA all groups hFE 2 Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ) IC = 500 mA, IB = 50 mA VCEsat 2 Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung ) IC = 500 mA, IB = 50 mA 2 VBEsat Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC817K / BC818K Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. ICBO – – 100 nA IEBO – – 100 nA fT – 170 MHz – CCBO – 3 pF – Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 25 V, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 4 V, (C open) Transition Frequency – Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpunkt Rthsp Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ 2 < 70 K/W BC807K / BC808K BC817K-16 = 6A or 6CR BC817K-25 = 6B or 6CS BC817K-40 = 6C or 6CT http://www.diotec.com/ BC818K-16 = 6E or 6CR BC818K-25 = 6F or 6CS BC818K-40 = 6G or 6CT © Diotec Semiconductor AG