BSS 64 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSS 64 Collector-Emitter-voltage B open VCE0 80 V Collector-Base-voltage E open VCB0 120 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 250 mA Peak Base current – Basis-Spitzenstrom IBM 100 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 90 V ICB0 – – 100 nA IE = 0, VCB = 90 V, Tj = 150/C ICB0 – – 50 :A IEB0 – 1 nA 200 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 1) 1 IC = 4 mA, IB = 0.4 mA VCEsat – – 150 mV IC = 50 mA, IB = 15 mA VCEsat – – 200 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 16 01.11.2003 Switching Transistors BSS 64 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 1 V, IC = 1 mA hFE – 60 – VCE = 1 V, IC = 10 mA hFE 20 80 – VCE = 1 V, IC = 20 mA hFE – 55 – fT 60 MHz 105 MHz – – 3 pF – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 25 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung CCB0 420 K/W 2) RthA BSS 63 BSS 64 = AM ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 17