BC 817W / BC 818W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 225 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 817W BC 818W Collector-Emitter-voltage B open VCE0 45 V 25 V Collector-Emitter-voltage B shorted VCES 50 V 30 V Collector-Base-voltage E open VCB0 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 225 mW 1) Collector current – Kollektorstrom (DC) IC 500 mA Peak Coll. current – Kollektor-Spitzenstrom ICM 1000 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 1000 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA VCE = 1 V, IC = 100 mA 1 BC817W BC818W hFE 100 – 600 hFE 40 – – Group -16W hFE 100 160 250 Group -25W hFE 160 250 400 Group -40W hFE 250 400 600 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 8 01.11.2003 General Purpose Transistors BC 817W / BC 818W Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. – – 0.7 V VBEsat – – 1.2 V VBE – – 1.2 V Collector saturation voltage – Kollektor-Sättigungsspg. IC = 500 mA, IB = 50 mA VCEsat Base saturation voltage – Basis-Sättigungsspannung IC = 500 mA, IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 1 V, - IC = 500 mA Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V ICB0 – – 100 nA IE = 0, VCB = 20 V, Tj = 150/C ICB0 – – 5 :A IEB0 – – 100 nA 100 MHz 170 MHz – – 6 pF – Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ BC 817-16W = 6A 620 K/W 1) BC 807W / BC 808W BC 817-25W = 6B BC 817-40W = 6C BC 818-25W = 6F BC 818-40W = 6G BC 817W = 6D BC 818-16W = 6E BC 818W = 6H 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 9