BFS 19 High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.9 Dimensions / Maße in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BFS 19 Collector-Emitter-voltage B open VCE0 20 V Collector-Base-voltage E open VCB0 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 30 mA Peak Collector current – Kollektor-Spitzenstrom ICM 30 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V ICB0 – – 100 nA IE = 0, VCB = 20 V, Tj = 100/C ICB0 – – 10 :A IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 01.11.2003 High Frequency Transistors BFS 19 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. 65 – 225 650 mV – 750 mV – 260 MHz – – 1 pF – – 0.85 pF – DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 10 V, IC = 1 mA hFE Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 10 V, IC = 1 mA VBEon Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Feedback Capacitance – Rückwirkungskapazität VCB = 10 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Marking - Stempelung RthA 420 K/W 2) BFS 19 = F2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 3