GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS ■ High Power Inverters ■ Motor Controllers ■ Induction Heating ■ Resonant Converters 6(G2) 11(C2) 7(E2) 3(C1) 2(E2) 1(E1C2) 5(E1) 9(C1) 4(G1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Order As: GP200MHS18 11 10 1 2 3 8 9 6 7 5 4 Note: When ordering, please use the whole part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP200MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1800 V ±20 V Collector current DC, Tcase = 55˚C for Tj = 125˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1500 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 84 ˚C/kW - 160 ˚C/kW - 7 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C - 5 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 7 mA Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 3.5 4 V VGE = 15V, IC = 200A, , Tcase = 125˚C - 4.3 5 V ICES IGES Test Conditions Parameter Symbol Collector cut-off current IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF Diode forward voltage IF = 200A - 2.2 2.5 V IF = 200A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 25 - nF - 30 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP200MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 500 650 ns Fall time VGE = ±15V - 200 300 ns EOFF Turn-off energy loss VCE = 900V - 50 120 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 450 600 ns L ~ 100nH - 90 120 ns - 60 80 mJ - 50 80 µC Min. Typ. Max. Units IC = 200A - 600 800 ns Fall time VGE = ±15V - 300 400 ns EOFF Turn-off energy loss VCE = 900V - 100 150 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 540 700 ns L ~ 100nH - 100 130 ns - 100 120 mJ - 80 110 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2400A/µs Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2000A/µs 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS18 TYPICAL CHARACTERISTICS Vge = 20/15/12V Vge = 20/15/12V 400 400 350 Common emitter Tcase = 25˚C 350 300 Vge = 10V Collector current, IC - (A) Collector current, Ic - (A) 300 250 200 150 200 150 100 50 50 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 0 0 7.0 Fig. 3 Typical output characteristics 250 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V) 9.0 10.0 Fig. 4 Typical output characteristics 300 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 4.7Ω Tcase = 25˚C VGE = ±15V VCE = 900V Vge = 10V 250 100 0 0 Common emitter Tcase = 125˚C 250 Tcase = 125˚C VGE = ±15V VCE = 900V Turn-on energy, EON - (mJ) Turn-on energy, EON - (mJ) 200 150 A B 100 C 50 0 0 A 200 B 150 C 100 50 50 100 150 Collector current, IC - (A) Fig. 5 Typical turn-on energy vs collector current 200 0 0 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 4.7Ω 50 100 150 Collector current, IC - (A) Fig. 6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 200 5/10 GP200MHS18 240 100 Tcase = 25˚C VGE = ±15V VCE = 900V 90 Tcase = 125˚C VGE = ±15V VCE = 900V 220 200 A 80 Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 180 70 B 60 C 50 40 30 A 160 140 B 120 C 100 80 60 20 40 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 4.7Ω 10 0 0 50 100 150 Collector current, IC - (A) 0 0 200 Fig. 7 Typical turn-off energy vs collector current 50 100 150 Collector current, IC - (A) 2400 VGE = ±15V VCE = 900V Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 4.7Ω 2200 25 200 Fig. 8 Typical turn-off energy vs collector current 30 2000 Tcase = 125˚C 1800 Switching times, - (ns) Diode turn-off energy, Eoff(diode) - (mJ) A: Rg = 15Ω B: Rg = 10Ω C: Rg = 4.7Ω 20 20 Tcase = 25˚C 15 10 1600 1400 tf 1200 1000 td(off) 800 600 td(on) 400 5 200 0 0 25 50 75 100 125 150 175 200 Collector current, IT - (A) Fig. 9 Typical diode turn-off energy vs collector current 6/10 tr 0 0 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) Typical switching times vs collector current Fig. 10 Typical switching characteristics vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS18 500 400 450 350 Tj = 25˚C 400 Collector current, IC - (A) Foward current, IF - (A) 300 250 Tj = 125˚C 200 150 350 300 250 200 150 100 100 50 50 Tcase = 125˚C Vge = ±15V Rg(min) = 5Ω Rg(min) : Minimum recommended value 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 0 0 3.5 Fig. 11 Diode typical forward characteristics Fig. 12 Reverse bias safe operating area 1000 IC .D ax m 50µs C u uo tin on (c 100µs s) Collector current, IC - (A) 100 tp = 1ms 1 0.1 Transient Thermal Impedance, Zth (j-c) - (°C/kW ) 1000 IC max. (single pulse) 10 Diode 10 100 1000 Collector-emitter voltage, Vce - (V) Fig. 13 Forward bias safe operating area 10000 Transistor 100 10 1 1 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig. 11 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2000 1200 400 800 1600 Collector-emitter voltage, Vce - (V) 7/10 GP200MHS18 500 300 450 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 250 350 Collector current, IC - (A) Inverter phase current, IC(PK) - (A) 400 300 250 200 150 200 150 100 100 Conditions: 50 Tj = 125°C, Tc = 75°C, Rg = 5Ω, VCC = 900V 0 1 50 10 fmax - (kHz) Fig. 12 3 Phase inverter operating frequency 8/10 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 13 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP200MHS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 ± 0.5 28 ± 0.5 6 62 ± 0.8 48 ± 0.3 11 2 1 10 3 7 4x Fast on tabs 8 5 9 4 93 ± 0.3 3x M6 23 38max 8 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP200MHS18 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5304-3 Issue No. 3.1 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com