DYNEX GP2400ESM12

GP2400ESM12
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module
Preliminary Information
DS5360-1.1 May 2000
The GP2400ESM12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
VCES
VCE(sat)
IC
IC(PK)
KEY PARAMETERS
1200V
(typ)
2.7V
(max)
2400A
(max)
4800A
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
This device is optimised for traction drives and other
applications requiring high thermal cycling capability.
Outline type code: E
(See package details for further information)
FEATURES
■
n - Channel Enhancement Mode
■
Non Punch Through Silicon
■
High Gate Input Impedance
■
Optimised For High Power High Frequency Operation
Fig. 1 Electrical connections - (not to scale)
External connection
C1
C2
C3
E2
E3
Aux C
■ Isolated MMC Base with AlN
■
1200V Rating
■
2400A Per Module
G
Aux E
E1
External connection
APPLICATIONS
■
High Power Switching
■
Motor Control
■
Inverters
■
Traction Drives
Fig.2 Single switch circuit diagram
ORDERING INFORMATION
Order As: GP2400ESM12
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/12
GP2400ESM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25˚C unless stated otherwise.
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
DC, Tcase = 75˚C, Tj = 125˚C
2400
A
IC(PK)
Peak collector current
1ms, Tcase = 75˚C, Tj = 125˚C
4800
A
Pmax
Max. power dissipation
Tcase = 25˚C (Transistor), Tj = 150˚C
20.8
kW
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
Min.
Max.
Units
IC
THERMAL AND MECHANICAL RATINGS
Symbol
Test Conditions
Parameter
Rth(j-c)
Thermal resistance - transistor
DC junction to case
-
6
˚C/kW
Rth(j-c)
Thermal resistance - diode
DC junction to case
-
13.3
˚C/kW
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
6
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
Electrical connections - M8
-
10
Nm
(with mounting grease)
Tj
Tstg
-
Junction temperature
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/12
GP2400ESM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
3
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
100
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
12
µA
VGE(TH)
Gate threshold voltage
IC = 120mA, VGE = VCE
4
-
7.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 2400A
-
2.7
3.5
V
VGE = 15V, IC = 2400A, , Tcase = 125˚C
-
3.2
4.0
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC, Tcase = 50˚C, Tj = 125˚C
-
-
2400
A
IFM
Diode maximum forward current
tp = 1ms, Tj = 125˚C
-
-
4800
A
VF
Diode forward voltage
IF = 2400A
-
2.2
2.4
V
IF = 2400A, Tcase = 125˚C
-
2.3
2.5
V
VCE = 25V, VGE = 0V, f = 1MHz
-
270
-
nF
-
10
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/12
GP2400ESM12
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
IC = 2400A
-
2300
-
ns
Fall time
VGE = ±15V
-
400
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
820
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
2600
-
ns
L ~ 80nH
-
1100
-
ns
-
490
-
mJ
-
200
-
µC
Min.
Typ.
Max.
Units
IC = 2400A
-
2570
-
ns
Fall time
VGE = ±15V
-
400
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
980
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
2650
-
ns
L ~ 80nH
-
1000
-
ns
-
620
-
mJ
-
400
-
µC
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 2400A, VR = 50% VCES,
dIF/dt = 2000A/µs
Tcase = 125˚C unless stated otherwise.
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IF = 2400A, VR = 50% VCES,
dIF/dt = 2000A/µs
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/12
GP2400ESM12
SWITCHING DEFINITIONS
+15V
Vge
10%
0V
-15V
t4 + 5µs
Eon =
∫V
.I dt
ce c
IC
90%
t1
td(on) = t2 - t1
10%
tr = t3 - t2
Vce
t1
t2
t4
t3
Fig.3 Definition of turn-on switching times
+15V
90%
0V
Vge
-15V
t7 + 5µs
Eoff =
∫V
.I dt
ce c
t5
90%
td(off) = t6 - t5
IC
10%
tf = t7 - t6
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/12
GP2400ESM12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
4800
4200
4800
Common emitter
Tcase = 25˚C
4200
3600
Collector current, IC - (A)
Collector current, IC - (A)
3600
3000
2400
1800
3000
2400
1800
1200
1200
600
600
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
0
0
5.0
Fig.5 Typical output characteristics
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
1200
Conditions:
Tcase = 25˚C
900 Vce = 600V
Vge = 15V
1000
800
Conditions:
Tcase = 125˚C
Vce = 600V
Vge = 15V
600
Rg = 4.3Ω
500
400
Rg = 3.3Ω
Turn-on energy, Eon (mJ)
Rg = 7Ω
700
5.0
Fig.6 Typical output characteristics
1000
Turn-on energy, Eon - (mJ)
Common emitter
Tcase = 125˚C
A
800
B
600
C
400
300
200
200
A: Rg = 7Ω
B: Rg = 4.3Ω
C: Rg = 3.3Ω
100
0
0
400
800
1200
1600
Collector current, IC - (A)
2000
Fig.7 Typical turn-on energy vs collector current
2400
0
0
400
800
1200
1600
Collector current, IC - (A)
2000
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/12
2400
GP2400ESM12
1600
1800
Conditions:
Tcase = 25˚C
Vce = 600V
Vge = 15V
1400
1400
Turn-off energy, Eoff - (mJ)
1200
Turn-off energy, Eoff - (mJ)
Conditions:
Tcase = 125'C
Vce = 600V
Vge = 15V
1600
A
1000
B
800
C
600
A
1200
B
1000
C
800
600
400
400
200
0
A: Rg = 7Ω
B: Rg = 4.3Ω
C: Rg = 3.3Ω
0
400
800
1200
1600
2000
A: Rg = 7Ω
B: Rg = 4.3Ω
C: Rg = 3.3Ω
200
0
2400
0
Collector current, IC - (A)
400
800
1200
1600
Collector current, IC - (A)
2000
2400
Fig.10 Typical turn-off energy vs collector current
Fig.9 Typical turn-off energy vs collector current
160
3000
Conditions:
VCE = 600V
VGE = 15V
Rg = 3.3Ω
140
td(on)
2500
td(off)
Tcase = 125˚C
Switching times - (ns)
Diode turn-off energy, Eoff - (mJ)
120
100
80
Tcase = 25˚C
60
2000
1500
Conditions:
Tcase = 125˚C
Vce = 600V
Vge = 15V
Rg = 3.3Ω
1000
tr
40
500
tf
20
0
0
400
800
1200
1600
Collector current, IC - (A)
2000
2400
Fig.11 Typical diode reverse recovery charge vs collector current
0
0
400
800
1200
1600
Collector current, IC - (A)
2000
2400
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/12
GP2400ESM12
3500
2400
3000
Tj = 25˚C
2000
2500
Collector current, IC - (A)
Forward current, IF - (A)
Tj = 125˚C
1600
1200
800
2000
1500
1000
400
Conditions:
Tcase = 125'C
Vge = 15
Rg = 3.3 ohms
500
0
0
0.5
1
1.5
2
Forward voltage, VF - (V)
2.5
3
0
0
1200
1000
IC max (DC)
tp = 50µs
tp = 100µs
100
tp = 1ms
10
1
1
10
100
1000
Collector emitter voltage, Vce - (V)
Fig.15 Forward bias safe operating area
10000
Transient thermal impedance, Zth(j-c) - (˚C/kW)
100
10000
Diode
10
Transistor
1
0.1
0.001
0.01
0.1
1
Pulse width, tp - (s)
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
8/12
1400
Fig.14 Reverse bias safe operating area
Fig.13 Diode typical forward characteristics
Collector current, IC - (A)
200
400
600
800
1000
Collector emitter voltage, Vce - (V)
10
GP2400ESM12
6000
4000
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
5000
3500
DC collector current, IC - (A)
Inverter phase current - (A)
3000
4000
2500
2000
3000
1500
2000
1000
500
1000
Conditions:
Tj = 125˚C, Tc = 75˚C,
Rg = 3.3Ω, VCC = 600V
0
0
0
1
10
20
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
fMAX - (kHz)
Fig.18 3-Phase inverter operating frequency
Fig.19 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/12
GP2400ESM12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1650g
Module outline type code: E
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
10/12
GP2400ESM12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with concept gate drivers
AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than a basic semiconductor
switch, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/12
GP2400ESM12
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50.
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50.
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5360-1 Issue No. 1.1 May 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
12/12