GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. VCES VCE(sat) IC IC(PK) KEY PARAMETERS 1200V (typ) 2.7V (max) 2400A (max) 4800A Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. This device is optimised for traction drives and other applications requiring high thermal cycling capability. Outline type code: E (See package details for further information) FEATURES ■ n - Channel Enhancement Mode ■ Non Punch Through Silicon ■ High Gate Input Impedance ■ Optimised For High Power High Frequency Operation Fig. 1 Electrical connections - (not to scale) External connection C1 C2 C3 E2 E3 Aux C ■ Isolated MMC Base with AlN ■ 1200V Rating ■ 2400A Per Module G Aux E E1 External connection APPLICATIONS ■ High Power Switching ■ Motor Control ■ Inverters ■ Traction Drives Fig.2 Single switch circuit diagram ORDERING INFORMATION Order As: GP2400ESM12 Note: When ordering, please use the whole part number. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/12 GP2400ESM12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25˚C unless stated otherwise. Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current DC, Tcase = 75˚C, Tj = 125˚C 2400 A IC(PK) Peak collector current 1ms, Tcase = 75˚C, Tj = 125˚C 4800 A Pmax Max. power dissipation Tcase = 25˚C (Transistor), Tj = 150˚C 20.8 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V Min. Max. Units IC THERMAL AND MECHANICAL RATINGS Symbol Test Conditions Parameter Rth(j-c) Thermal resistance - transistor DC junction to case - 6 ˚C/kW Rth(j-c) Thermal resistance - diode DC junction to case - 13.3 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm - 6 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm (with mounting grease) Tj Tstg - Junction temperature - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/12 GP2400ESM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 100 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4 - 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 2400A - 2.7 3.5 V VGE = 15V, IC = 2400A, , Tcase = 125˚C - 3.2 4.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC, Tcase = 50˚C, Tj = 125˚C - - 2400 A IFM Diode maximum forward current tp = 1ms, Tj = 125˚C - - 4800 A VF Diode forward voltage IF = 2400A - 2.2 2.4 V IF = 2400A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 270 - nF - 10 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/12 GP2400ESM12 ELECTRICAL CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units IC = 2400A - 2300 - ns Fall time VGE = ±15V - 400 - ns EOFF Turn-off energy loss VCE = 600V - 820 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 2600 - ns L ~ 80nH - 1100 - ns - 490 - mJ - 200 - µC Min. Typ. Max. Units IC = 2400A - 2570 - ns Fall time VGE = ±15V - 400 - ns EOFF Turn-off energy loss VCE = 600V - 980 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 2650 - ns L ~ 80nH - 1000 - ns - 620 - mJ - 400 - µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 2400A, VR = 50% VCES, dIF/dt = 2000A/µs Tcase = 125˚C unless stated otherwise. Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 2400A, VR = 50% VCES, dIF/dt = 2000A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/12 GP2400ESM12 SWITCHING DEFINITIONS +15V Vge 10% 0V -15V t4 + 5µs Eon = ∫V .I dt ce c IC 90% t1 td(on) = t2 - t1 10% tr = t3 - t2 Vce t1 t2 t4 t3 Fig.3 Definition of turn-on switching times +15V 90% 0V Vge -15V t7 + 5µs Eoff = ∫V .I dt ce c t5 90% td(off) = t6 - t5 IC 10% tf = t7 - t6 Vce t5 t6 t7 Fig.4 Definition of turn-off switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/12 GP2400ESM12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 4800 4200 4800 Common emitter Tcase = 25˚C 4200 3600 Collector current, IC - (A) Collector current, IC - (A) 3600 3000 2400 1800 3000 2400 1800 1200 1200 600 600 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig.5 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 1200 Conditions: Tcase = 25˚C 900 Vce = 600V Vge = 15V 1000 800 Conditions: Tcase = 125˚C Vce = 600V Vge = 15V 600 Rg = 4.3Ω 500 400 Rg = 3.3Ω Turn-on energy, Eon (mJ) Rg = 7Ω 700 5.0 Fig.6 Typical output characteristics 1000 Turn-on energy, Eon - (mJ) Common emitter Tcase = 125˚C A 800 B 600 C 400 300 200 200 A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω 100 0 0 400 800 1200 1600 Collector current, IC - (A) 2000 Fig.7 Typical turn-on energy vs collector current 2400 0 0 400 800 1200 1600 Collector current, IC - (A) 2000 Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/12 2400 GP2400ESM12 1600 1800 Conditions: Tcase = 25˚C Vce = 600V Vge = 15V 1400 1400 Turn-off energy, Eoff - (mJ) 1200 Turn-off energy, Eoff - (mJ) Conditions: Tcase = 125'C Vce = 600V Vge = 15V 1600 A 1000 B 800 C 600 A 1200 B 1000 C 800 600 400 400 200 0 A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω 0 400 800 1200 1600 2000 A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω 200 0 2400 0 Collector current, IC - (A) 400 800 1200 1600 Collector current, IC - (A) 2000 2400 Fig.10 Typical turn-off energy vs collector current Fig.9 Typical turn-off energy vs collector current 160 3000 Conditions: VCE = 600V VGE = 15V Rg = 3.3Ω 140 td(on) 2500 td(off) Tcase = 125˚C Switching times - (ns) Diode turn-off energy, Eoff - (mJ) 120 100 80 Tcase = 25˚C 60 2000 1500 Conditions: Tcase = 125˚C Vce = 600V Vge = 15V Rg = 3.3Ω 1000 tr 40 500 tf 20 0 0 400 800 1200 1600 Collector current, IC - (A) 2000 2400 Fig.11 Typical diode reverse recovery charge vs collector current 0 0 400 800 1200 1600 Collector current, IC - (A) 2000 2400 Fig.12 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/12 GP2400ESM12 3500 2400 3000 Tj = 25˚C 2000 2500 Collector current, IC - (A) Forward current, IF - (A) Tj = 125˚C 1600 1200 800 2000 1500 1000 400 Conditions: Tcase = 125'C Vge = 15 Rg = 3.3 ohms 500 0 0 0.5 1 1.5 2 Forward voltage, VF - (V) 2.5 3 0 0 1200 1000 IC max (DC) tp = 50µs tp = 100µs 100 tp = 1ms 10 1 1 10 100 1000 Collector emitter voltage, Vce - (V) Fig.15 Forward bias safe operating area 10000 Transient thermal impedance, Zth(j-c) - (˚C/kW) 100 10000 Diode 10 Transistor 1 0.1 0.001 0.01 0.1 1 Pulse width, tp - (s) Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/12 1400 Fig.14 Reverse bias safe operating area Fig.13 Diode typical forward characteristics Collector current, IC - (A) 200 400 600 800 1000 Collector emitter voltage, Vce - (V) 10 GP2400ESM12 6000 4000 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 5000 3500 DC collector current, IC - (A) Inverter phase current - (A) 3000 4000 2500 2000 3000 1500 2000 1000 500 1000 Conditions: Tj = 125˚C, Tc = 75˚C, Rg = 3.3Ω, VCC = 600V 0 0 0 1 10 20 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 fMAX - (kHz) Fig.18 3-Phase inverter operating frequency Fig.19 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/12 GP2400ESM12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1650g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/12 GP2400ESM12 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than a basic semiconductor switch, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/12 GP2400ESM12 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5360-1 Issue No. 1.1 May 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 12/12