e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 20 16 200 82 12 LOT 8 VCC = 26 V 4 ICQ = 70 mA f = 2.0 GHz COD E 0 0 1 2 3 4 Input Power (Watts) Package 20209 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.4 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 52 Watts 0.29 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 3.4 °C/W 1 9/28/98 e PTB 20082 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 — — — Symbol Min Typ Max Units Gpe 8 9 — dB P-1dB 15 — — Watts ηC 30 — — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Output Power at 1 dB Compression (VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz—all phase angles at frequency of test) Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 40 Efficiency (%) VCC = 26 V 30 ICQ = 70 mA Output Power (W) 6 5 1750 1800 1850 1900 1950 2000 20 POUT = 7.5 W Efficiency (%) 12 40 30 Gain (dB) -15 20 8 -25 10 10 2050 4 1900 Frequency (MHz) Return Loss (dB) 1925 1950 1975 Frequency (MHz) 2 5/11/98 50 ICQ = 70 mA 16 Efficiency 8 60 VCC = 26 V -35 0 2000 Return Loss Gain 50 20 Gain Gain (dB) 9 7 Broadband Test Fixture Performance 60 Output Power & Efficiency 10 e PTB 20082 Intermodulation Distortion vs. Output Power -20 18 -30 IMD (dBc) Output Power (Watts) Output Power vs. Supply Voltage 20 16 14 ICQ = 70 mA f = 2.0 GHz 12 -40 VCC = 28 V -50 ICQ = 40 mA f1 = 1999.9 MHz -60 f2 = 2000.0 MHz 10 -70 22 23 24 25 26 27 1 3 Supply Voltage (Volts) 5 7 9 11 13 15 Output Power (Watts-PEP) Power Gain vs. Output Power 10 ICQ = 70 mA Power Gain (dB) 9 8 ICQ = 35 mA 7 VCC = 26 V f = 2.0 GHz 6 ICQ = 18 mA 5 0.1 1.0 10.0 100.0 Output Power (Watts) Impedance Data VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA Z Source Z Load Z0 = 50 Ω Frequency Z Source Z Load GHz R jX R jX 1.75 5.8 -12.7 9.29 -0.6 1.80 5.8 -11.9 10.15 -0.9 1.85 5.8 -11.4 9.80 -1.3 1.90 5.8 -10.2 9.58 -1.5 1.95 6.0 -8.8 8.83 -1.5 2.00 7.1 -5.9 8.23 -1.3 2.05 7.7 -4.9 8.79 -0.7 3 5/6/98 e PTB 20082 Typical Scattering Parameters (VCE = 26 V, IC = 0.5 A) f (MHz) S11 Mag Ang Mag Ang Mag Ang Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.855 0.879 0.931 0.961 0.977 0.984 0.989 0.992 0.998 0.998 0.997 0.991 0.987 0.974 0.950 0.905 0.824 0.708 0.659 0.731 0.827 0.889 -176 -176 -176 -178 -179 180 178 177 176 175 173 172 170 168 165 163 160 163 173 -178 -178 -180 4.80 3.55 1.36 0.558 0.157 0.103 0.263 0.380 0.476 0.563 0.650 0.740 0.847 0.978 1.15 1.39 1.67 1.86 1.83 1.57 1.22 0.919 82 75 40 22 19 145 149 142 134 125 116 107 98 87 75 59 39 12 -17 -46 -69 -85 0.008 0.007 0.003 0.002 0.004 0.006 0.009 0.012 0.015 0.018 0.021 0.023 0.026 0.030 0.035 0.041 0.047 0.050 0.044 0.033 0.023 0.016 -24 -27 -29 31 78 84 81 76 72 66 60 54 50 44 35 24 7 -18 -45 -69 -91 -114 0.776 0.821 0.911 0.962 0.985 1.00 0.998 0.962 0.931 0.896 0.868 0.833 0.791 0.738 0.674 0.594 0.523 0.552 0.702 0.839 0.892 0.894 -172 -172 -174 -177 180 177 173 170 168 166 165 164 162 161 161 164 173 -172 -167 -171 -178 178 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 S21 S12 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 S22 Specifications subject to change without notice. L1 © Ericsson Inc. Components AB 1995 EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98