e PTB 20105 20 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics Performance at 960 MHz, 25 VCC - Output Power = 20 W - Efficiency = 50% Min Gold Metallization Silicon Nitride Passivated Output Power vs. Input Power Output Power (Watts) 25 20 201 05 15 LOT COD E 10 VCC = 25 V ICQ = 0.100 A f = 960 MHz 5 0 0 1 2 3 4 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 5.0 Adc Total Device Dissipation at Tflange = 25°C PD 70 Watts 0.4 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.5 °C/W 1 9/28/98 e PTB 20105 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5.0 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) Gpe 9 10 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) ηC 50 — — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 925 3.1 -1.8 3.1 1.4 942 3.0 -1.5 2.9 1.4 960 2.9 -1.2 2.7 1.4 2 e PTB 20105 Typical Performance Output Power vs. Supply Voltage Gain vs. Frequency 22 (as measured in a broadband circuit) 11 ICQ = 0.100 A f = 960 MHz Pin = 2.2 W 10 Gain (dB) Output Power (Watts) 26 18 9 VCC = 25 V ICQ = 0.100 A Pout = 20 W 14 8 10 7 925 17 19 21 23 25 27 930 935 Vcc, Supply Voltage 940 945 950 955 960 Frequency (MHz) Efficiency vs. Output Power 60 Efficiency (%) 50 40 30 20 VCC = 25 V 10 ICQ = 0.100 A f = 960 MHz 0 4 8 12 16 20 24 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98