e PTB 20166 23 Watts, 675–925 MHz Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 30 25 20 201 66 LOT 15 COD E 10 VCC = 28 V f = 925 MHz 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Package 20209 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 4 Adc Total Device Dissipation at Tflange = 25°C PD 48 Watts 0.27 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 3.6 °C/W 1 9/28/98 e PTB 20166 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 50 mA, RBE = 27 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 — — Volts DC Current Gain VCE = 5 V, IC = 500 mA hFE 30 50 100 — Symbol Min Typ Max Units Gain (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz) Gpe 8 9 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz) ηC 55 65 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 23 W) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 675 7.4 -1.8 6.6 9.0 700 7.2 -1.4 7.2 8.6 725 7.0 -1.1 7.5 8.1 750 6.9 -0.79 7.6 7.6 775 6.6 -0.52 7.6 7.1 800 6.4 -0.26 7.5 6.7 825 6.1 0.01 7.2 6.4 850 5.7 0.29 6.9 6.2 875 5.3 0.62 6.6 6.1 900 4.9 1.0 6.2 6.0 925 4.5 1.4 5.9 6.1 2 5/19/98 e PTB 20166 Typical Performance Gain & Efficiency vs. Power Out Gain and Return Loss vs. Frequency 70 8 60 6 50 4 40 VCC = 28 V f = 925 MHz 2 30 0 Gain (dB) 10 5 10 15 20 25 0 10 -5 8 -10 6 -15 4 2 20 0 12 0 600 30 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 -20 VCC = 28 V Pin = 2 W 700 -25 800 900 -30 1000 Return Loss (dB) (as measured in a broadband circuit) 80 Efficiency (%) Gain (dB) 12 Frequency (MHz) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20166 Uen Rev. C 09-28-98