e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 1.845 GHz Characteristics - Output Power = 10 Watts - Gain = 9.4 dB Typ at 5 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs. Input Power 80 Output Power 10 60 8 Efficiency 40 6 4 VCC = 26 V 2 ICQ = 50 mA f = 1845 MHz 20 0 Efficiency (%) Output Power (Watts) 12 20 26 4 LO TC OD E 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Input Power (Watts) Package 20243 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage, RBE = 10 Ω VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 2.0 Adc Total Device Dissipation at Tflange = 25°C PD 30 Watts 0.173 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 5.8 °C/W 1 9/28/98 e PTB 20264 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA V(BR)CEO 22 26 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 55 60 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 — Symbol Min Typ Max Units Gain at POUT = 5 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, 1880 MHz) Gpe 9.0 9.4 — dB Gain Compression at POUT = 5 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, 1880 MHz) — — — 0.2 dB Gain at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) Gpe 8.4 — — dB Gain Compression at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) — — — 0.8 dB ηC 40 — — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Collector Efficiency at POUT = 10 Watts (VCC = 26 Vdc, ICQ = 50 mA, f = 1845 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 10 W, ICQ = 50 mA, f = 1845 MHz—all phase angles at frequency of test) Typical Performance Gain vs. Frequency Output Power vs. Supply Voltage (as measured in a broadband circuit) 12 11 10 Gain (dB) Output Power (Watts) 12 10 ICQ = 50 mA 9 8 24.5 PIN = 1.3 W f = 1845 MHz 25.0 25.5 26.0 26.5 27.0 VCC = 26 V 6 POUT = 5 W ICQ = 50 mA 4 1800 27.5 Supply Voltage (Volts) 1820 1840 1860 Frequency (MHz) 2 9/28/98 8 1880 1900 e PTB 20264 Impedance Data (data shown for fixed-tuned broadband circuit) Z0 = 50 Ω VCC = 26 Vdc, POUT = 10 W, ICQ = 50 mA Z Source Frequency Z Source Z Load Z Load GHz R jX R jX 1805 11.4 2.6 12.2 8.1 1850 11.0 3.7 12.2 9.6 1880 10.9 4.3 12.4 10.6 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 9/28/98 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20264 Uen Rev. A 09-28-98