e PTB 20179 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8–2.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 1.0 0.8 VCC = 26 V 0.6 IC = 120 mA f = 2.0 GHz 20 17 9 LO TC OD E 0.4 0.2 0.0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 Input Power (Watts) Package 20227 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 5.4 Watts 0.031 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 32.3 °C/W 1 9/28/98 e PTB 20179 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Symbol Min Typ Max Units Gpe 8 10 — dB P-1dB 0.4 0.6 — Watts Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA, f = 2.0 GHz) Output Power at 1 dB Compressed (VCC = 26 Vdc, IC = 120 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA, f = 2.0 GHz—all phase angles at frequency of test) Typical Performance 10 Intermodulation Distortion vs. Output Power 30 0 Gain (dB) 25 Efficiency (%) 6 20 4 VCC = 26 V IC = 120 mA 2 15 1800 1850 f1 = 1999.9 MHz -30 f2 = 2000.0 MHz -40 IM3 -50 10 -60 1900 1950 2000 IM5 5 2050 -70 0.0 Frequency (MHz) 0.2 IM7 0.4 0.6 Output Power (Watts-PEP) 2 5/6/98 IC = 120 mA -20 Output Power (W ) 0 1750 VCC = 26 V -10 IMD (dBc) 8 Efficiency (%) Gain (dB) & Output Power (W) POUT, Gain & Efficiency (at P-1dB) vs. Frequency 0.8 e PTB 20179 Impedance Data Z0 = 50 Ω VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.75 12.0 -0.9 20.8 28.0 1.80 12.6 -1.2 23.3 28.3 1.85 13.0 -1.7 21.2 26.3 1.90 12.8 -2.5 19.4 23.8 1.95 11.0 -1.9 18.2 23.2 2.00 10.4 -1.3 17.5 23.7 2.05 11.9 1.2 17.2 24.0 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 5/6/98 Specifications subject to change without notice. L1F © 1996 Ericsson Inc. EUS/KR 1301-PTB20179 Uen Rev. C 09-28-98