e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 60 50 40 200 31 LOT 30 20 VCC = 24 V 10 ICQ = 200 mA f = 470 MHz CO DE 0 0 2 4 6 8 10 Input Power (Watts) Package 20200 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10.0 Adc Total Device Dissipation at Tflange = 25°C PD 175 Watts 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.0 °C/W 1 9/23/98 e PTB 20031 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 50 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz) Gpe 8.0 9.5 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz) ηC 50 — — % IMD — -22 — dBc Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Intermodulation Distortion (VCC = 24 Vdc, Pout = 40 W(PEP), ICQ = 200 mA, f1 = 469 MHz, f2 = 470 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 40 W, ICQ = 200 mA, f = 420–470 MHz —all phase angles at frequency of test) Typical Performance Gain & Efficiency vs. Frequency Gain (dB) 11 10 80 70 Efficiency (%) 60 Gain (dB) 9 50 8 VCC = 24 V 40 7 ICQ = 200 mA Pout = 30 W 30 6 410 420 430 440 450 460 Efficiency (%) 12 (as measured in a broadband circuit) 20 470 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 9/23/98 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98