e PTB 20101 175 Watts P-Sync, 470–860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync - Output Power = 110 (CW) - Gain = 10.0 dB Min 55% Collector Efficiency at 110 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Gain vs. Frequency 13 (as measured in a broadband circuit) Gain (dB) 12 201 01 11 LOT COD E 10 VCC = 28 V ICQ = 2 x 200 mA Pout = 110 W 9 8 400 500 600 700 800 900 Package 20224 Frequency (MHz) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 20 Adc Total Device Dissipation at Tflange = 25°C PD 330 Watts 1.89 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W 1 9/28/98 e PTB 20101 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Cob — 85 — pF Symbol Min Typ Max Units Pout 175 — — Watts Gain (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, f = 860 MHz) Gpe 10.0 11 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, f = 860 MHz) ηC 55 58 — % Ψ — — 5:1 — Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz RF Specifications (100% Tested) Characteristic Output Power (P-Sync) (VCC = 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 175 W, ICQ = 200 mA per side, f = 860 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 450 0.4 -1.0 2.0 0.3 550 0.5 -1.3 1.6 0.0 650 0.7 -1.8 1.3 0.0 750 1.8 -2.0 1.0 -0.8 850 2.7 -0.5 0.9 -1.2 2 9/28/98 e PTB 20101 Typical Performance Efficiency vs. Frequency 60 (as measured in a broadband circuit) Efficiency (%) 58 56 54 VCC = 28 V 52 ICQ = 2 x 200 mA Pout = 110 W 50 400 500 600 700 800 900 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98