e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 70 65 60 201 67 55 LO 50 TC OD E 45 40 VCC = 24 V f = 905 MHz 35 30 6 7 8 9 10 11 12 Input Power (Watts) Package 20200 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10 Adc Total Device Dissipation at Tflange = 25°C PD 175 Watts 1 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1 °C/W 1 9/28/98 e PTB 20167 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 30 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 15 mA V(BR)EBO 4.0 — — Volts DC Current Gain VCE = 5 V, IC = 2.0 A hFE 20 — 100 — Output Capacitance VCB = 28 V, f = 1 MHz Cob — 60 — pF Symbol Min Typ Max Units Common Base Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz) Gpb 7.0 7.9 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz) ηC 60 64 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 60 W) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 850 5.4 -3.6 5.8 -0.7 905 5.3 -2.4 6.2 0.6 960 5.2 -1.4 6.9 1.7 2 e PTB 20167 Typical Performance Gain & Efficiency vs. Frequency Gain (dB) 9 72 Gain (dB) 8 69 8 66 7 7 6 845 75 63 VCC = 24 V Pout = 60 W Efficiency (%) 860 875 890 905 920 935 950 Efficiency (%) 9 (as measured in a broadband circuit) 60 57 965 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20167 Uen Rev. C 09-28-98