e PTB 20228 6.5 Watts, 1.62–1.66 GHz RF Power Transistor Description The 20228 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6.5 Watts, 1.62–1.66 GHz Class AB Characteristics 40% Collector Efficiency at 6.5 Watts Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated 10 80 8 64 6 48 4 32 VCC = 26 V ICQ = 40 mA f = 1.661 GHz 2 16 0 202 28 Efficiency (%) Output Power (Watts) Typical Power Out and Efficiency vs. Power In LO TC OD E 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Package 20227 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.0 Adc Total Device Dissipation at Tflange = 25°C PD 19.7 Watts 0.112 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 8.9 °C/W 1 9/28/98 e PTB 20228 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA V(BR)CEO 20 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE =5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Output Capacitance VCB = 26 V, Ie = 0, f = 1 MHz Cob 6.1 pF RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gpe 8.5 9.5 — dB P-1dB 6.5 — — Watts Collector Efficiency (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA, f = 1.626 & 1.661 GHz) ηC 40 — — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA, f = 1.661 GHz—all phase angles at frequency of test) Ψ — — 5:1 — Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.626 & 1.661 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.661 GHz) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 6.5 W, ICQ = 40 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.626 1.32 -2.29 7.02 21.19 1.640 1.27 -1.12 6.72 21.98 1.661 1.21 0.47 6.46 23.17 2 Z0 = 50 Ω e PTB 20228 Typical Performance Gain vs. Frequency 12 (as measured in a broadband circuit) Gain (dB) 11 10 9 VCC = 26 V IC = 40 mA Pin = 0.7 W 8 7 1.62 1.63 1.64 1.65 1.66 1.67 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20228 Uen Rev. C 09-28-98