PTB 20248 0.7 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20248 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.7 Watts, 26 Vdc Class A Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 1.2 1 0.8 202 48 0.6 LO 0.4 VCC = 26 V 0.2 ICQ = 0.120 A f = 1513 MHz TC OD E 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 Input Power (Watts) Package 20227 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 5.4 Watts 0.031 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 32.3 °C/W 1 9/28/98 PTB 20248 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 55 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 200 mA hFE 20 — — — Symbol Min Typ Max Units Gpe 10 12 — dB P-1dB 0.7 0.9 — Watts Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.2 W, ICQ = 120 mA, f = 1513 MHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 120 mA, f = 1513 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.7 W, ICQ = 120 mA, f = 1513 MHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 0.7 W, ICQ = 120 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 1465 6.50 6.10 10.60 37.30 1489 5.70 7.60 10.70 38.90 1513 5.00 8.90 10.90 40.50 Z0 = 50 Ω 2 5 /19 /9 8 PTB 20248 Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 16 Gain (dB) 15 14 VCC = 26 V ICQ = 0.120 A Pout = 0.2 W 13 12 1465 1475 1485 1495 1505 1515 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20248 Uen Rev. A 09-28-98