e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1.8–2.0 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 6 5 VCC = 26 V 4 ICQ = 40 mA f = 2.0 GHz 20 14 7 LO 3 TC OD E 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Package 20208 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.0 Adc Total Device Dissipation at Tflange = 25°C PD 10 Watts 0.057 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 17.5 °C/W 1 9/28/98 e PTB 20147 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 50 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Symbol Min Typ Max Units Gpe 8 10 — dB P-1dB 2.5 4 — Watts ηC 20 — — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA, f = 2.0 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 1.17 W, ICQ = 40 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA, f = 2.0 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.8 30.0 -2.45 5.65 13.1 1.9 22.9 0.00 7.23 13.8 2.0 17.7 5.14 6.30 11.9 Z0 = 50 Ω Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20147 Uen Rev. D 09-28-98