PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 12 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 20 16 12 8 VCC = 26 V 4 ICQ = 25 mA f = 1513 MHz 20 23 9 LO TC OD E 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Input Power (Watts) Package 20232 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 2.0 Adc Total Device Dissipation at Tflange = 25°C PD 33 Watts 0.189 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 5.3 °C/W 1 9/28/98 PTB 20239 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 — — — Symbol Min Typ Max Units Gpe 8 — — dB P-1dB 12 13 — Watts ηC 40 — — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 25 mA, f = 1513 MHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 25 mA, f = 1513 MHz) Collector Efficiency (VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, f = 1513 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, f = 1513 MHz—all phase angles at frequency of test) Typical Performance Gain vs. Frequency Efficiency vs. Output Power (as measured in a broadband circuit) 80 11 70 Efficiency (%) Gain (dB) 10 9 VCC = 26 V 8 ICQ = 25 mA 7 6 1465 POUT = 12 W 50 40 30 VCC = 26 V 20 ICQ = 25 mA f = 1513 MHz 10 0 1475 1485 1495 1505 1515 2 Frequency (MHz) 4 6 8 10 Output Power (Watts) 2 4/30/98 60 12 14 PTB 20239 Impedance Data (shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA Z Source Frequency Z Load Z Source Z Load Z0 = 50 Ω MHz R jX R jX 1465 4.84 4.15 7.52 10.26 1490 4.45 5.33 7.16 11.29 1515 4.13 6.39 6.89 12.25 Typical Scattering Parameters (VCE = 26 V, IC = 0.250 A) f (MHz) Mag S11 Ang Mag Ang Mag Ang Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.914 0.920 0.930 0.930 0.924 0.916 0.909 0.901 0.895 0.882 0.867 0.844 0.818 0.785 0.756 0.744 0.768 0.823 0.888 0.941 0.974 0.992 -179 180 177 175 174 172 171 170 168 167 165 164 163 163 165 168 171 173 172 169 166 162 6.76 5.58 3.28 2.46 2.02 1.75 1.56 1.43 1.35 1.30 1.28 1.28 1.30 1.32 1.34 1.33 1.26 1.13 0.951 0.766 0.601 0.467 103 99 85 77 69 62 56 49 42 35 28 19 9 -2 -16 -32 -51 -70 -88 -105 -121 -135 0.018 0.019 0.025 0.031 0.037 0.044 0.051 0.057 0.064 0.070 0.076 0.082 0.086 0.087 0.084 0.077 0.071 0.072 0.086 0.108 0.131 0.153 34 40 51 56 58 59 59 58 57 56 54 51 48 45 42 42 48 61 72 75 75 72 0.597 0.591 0.581 0.581 0.578 0.580 0.580 0.570 0.566 0.561 0.564 0.569 0.584 0.614 0.672 0.755 0.852 0.932 0.980 0.995 0.987 0.972 172 173 176 177 179 180 179 180 -179 -177 -175 -173 -170 -167 -164 -164 -167 -171 -177 177 172 168 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 S21 S12 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 S22 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTB 20239 Uen Rev. A 09-28-98