e PTB 20141 18 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 18 Watts, 1.465–1.513 GHz Class AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 30 VCC = 23 V 25 ICQ = 50 mA f = 1.501 GHz 20 201 41 LOT COD E 15 10 5 0 0 1 2 3 4 5 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 2.0 Adc Total Device Dissipation at Tflange = 25°C PD 51.5 Watts 0.29 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 3.5 °C/W 1 9/28/98 e PTB 20141 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 40 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 40 120 — Symbol Min Typ Max Units Gain (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz) Gpe 8.5 — — dB Collector Efficiency (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz) ηC 45 — — % IMD — -29 — dBc Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Intermodulation Distortion (VCC = 23 Vdc, Pout = 9 W(PEP), ICQ = 50 mA, f1 = 1.500 GHz, f2 = 1.501 GHz) Load Mismatch Tolerance (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA) Z Source Frequency Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Z Load Z Source Z Load GHz R jX R jX 1.465 3.9 -5.6 3.1 -0.56 1.489 3.4 -4.5 3.0 -0.39 1.513 2.9 -3.4 2.9 -0.20 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20141 Uen Rev. D 09-28-98