e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs. Frequency (as measured in a broadband circuit) VCC = 22 V Pin = 2.0 W 8 Gain (dB) Gain (dB) 0 -3 6 -6 4 -9 2 Return Loss (dB) 10 2015 6 LOT COD E -12 Return Loss (dB) 0 -15 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Frequency (GHz) Package 20209 Maximum Ratings Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 2.0 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 52 Watts 0.29 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 3.4 °C/W 1 9/28/98 e PTB 20156 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE — — 100 — Symbol Min Typ Max Units Gain (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz) Gpe 6.0 — — dB Collector Efficiency (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz) ηC 40 50 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 22 Vdc, Pout = 8 W, f = 1850 MHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 22 Vdc, Pout = 20 W) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 1350 13.8 -14.0 4.2 0.0 1500 11.2 -12.8 5.6 0.5 1700 10.7 -8.4 6.0 -1.5 1850 20.0 -9.3 4.2 -2.1 2 e PTB 20156 Typical Performance Gain & Efficiency vs. Power Out 10 60 50 8 Gain (dB) 30 4 20 VCC = 28 V f = 1.85 GHz 2 10 0 Efficiency (%) 40 6 0 0 2 4 6 8 10 12 14 16 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20156 Uen Rev. C 09-28-98