e PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Volt, 900–960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs. Input Power 2.0 80 VCC = 25 V 60 1.0 40 0.5 0.0 0.00 20 0.02 0.04 0.06 0.08 201 89 Efficiency (%) Output Power (Watts) 1.5 ICQ = 175 mA f = 960 MHz LO TC OD E 0 0.10 Package 20227 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 11 Watts 0.063 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 16.0 °C/W 1 9/28/98 e PTB 20189 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA V(BR)CEO 28 32 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1.5 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Gpe 12 14 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) ηC — 25 — % Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 900 3.0 -0.4 9.0 6.0 930 3.0 0.0 9.0 7.5 960 2.9 0.5 9.2 8.9 2 e PTB 20189 Typical Performance Output Power vs. Supply Voltage Gain vs. Frequency 16 ICQ = 175 mA Pin = 40 mW f = 960 MHz 1.1 0.9 0.7 12 VCC = 25 V 10 8 900 0.5 16 18 20 22 24 26 28 30 Vcc, Supply Voltage Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 (as measured in a broadband circuit) 14 Gain (dB) Output Power (Watts) 1.3 ICQ = 175 mA Pout = 1 W 915 930 945 960 Frequency (MHz) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20189 Uen Rev. C 09-28-98