e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 55 Watts, 1.9–2.0 GHz Class AB Characteristics 40% Collector Efficiency at 55 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 70 60 50 201 75 LOT COD 40 E VCC = 26 V 30 ICQ = 0.150 A f = 2 GHz 20 10 2 4 6 8 10 12 14 Package 20223 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Emitter Voltage VCES 55 Vdc Emitter-Base Voltage (collector open) VEBO 4 Vdc Collector Current (continuous) IC 8 Adc Total Device Dissipation at Tflange = 25° C PD 233 W 1.33 W/°C Above 25°C derate by Storage Temperature Range Tstg –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC .75 °C/W 1 9/28/98 e PTB 20175 Electrical Characteristics (100% Tested) Characteristics Conditions Symbol Min Typ Max Units Breakdown Voltage C to E Ic = 60 mA, RB = 27 Ω V(BR)CER 55 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 V, IE = 25 mA V(BR)EBO 4.0 5 — Volts DC Current Gain VCE = 5 V, IC = 300 mA Hfe — 50 — — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA, f = 2.0 GHz) Gpe 7.0 7.6 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA, f = 2.0 GHz) ηC 37 47 — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 55 W(PEP), ICQ = 150 mA, f = 2.0 GHz—All Phase Angles at Frequency of Test) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristics Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 55 W, ICQ = 150 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.90 3.26 -2.0 2.30 -1.9 1.95 3.26 -1.7 2.25 -2.2 2.00 3.26 -1.4 2.20 -2.5 Z0 = 50 Ω 2 5 /19/98 e PTB 20175 Typical Performance Efficiency vs. Output Power Gain vs. Frequency 60 (as measured in a broadband circuit) 9.0 50 Gain (dB) 8.5 Efficiency (%) VCC = 26 V ICQ = 0.150 A Pout = 15 W 8.0 7.5 7.0 1.90 40 30 20 VCC = 26 V 10 ICQ = 0.150 A f = 2 GHz 0 1.93 1.95 1.98 20 2.00 25 30 35 Frequency (GHz) Intermodulation Distortion vs. Power Output -20 VCC = 26 V ICQ = 0.150 A IMD (dBc) -24 f1 = 1.999 GHz -28 F2 = 2.000 GHz -32 -36 -40 0 10 20 30 40 Output Power (Watts-PEP) Test Circuit Artwork (1 inch ) 3 5/19/98 40 45 50 Output Power (Watts) 50 60 55 60 65 e PTB 20175 Schematic for f = 2 GHz Q1 l1 l2 l3 l4 l5 l6 l7 l8 l9 PTB 20175 .1 λ 2 GHz .065 λ 2 GHz .095 λ 2 GHz .055 λ 2 GHz .055 λ 2 GHz .065 λ 2 GHz .25 λ 2 GHz Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 C1, C6 C2, C7 C3, C4, C8, C10 C5, C9 L1 L2 L3 R1 Board NPN RF Transistor Microstrip 50 Ω Microstrip 75 Ω Microstrip 16 Ω Microstrip 10.8 Ω Microstrip 8.0 Ω Microstrip 12.5 Ω Microstrip 22 Ω Microstrip 60 Ω Microstrip 50 Ω 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 .1 µF 10 µF, 35 V 33 pF 0 - 4 pf 56 nh 6.8 nh 4 mm. 22 Ω .031 G-200 Solid 1206 Chip SMT Tantalum ATC-100 Johanson Trimmer SMT Inductor SMT Inductor SMT Ferrite 1206 Chip Copper Bottom Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20175 Uen Rev. C 09-28-98