e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 12 10 8 200 06 LOT 6 4 VCC = 25 V 2 ICQ = 50 A f = 900 MHz 0 0.00 0.15 0.30 0.45 0.60 COD E 0.75 Input Power (Watts) Package 20201 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.7 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 35 Watts 0.2 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 5.0 °C/W 1 9/28/98 e PTB 20006 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) Gpe 11.0 13.0 — dB Collector Efficiency (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) ηC 45 — — % IMD — -25 — dBc Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Intermodulation Distortion (VCC = 25 Vdc, POUT = 4 W(PEP), ICQ = 50 mA, f1 = 860MHz, f2 = 861 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 860 5.3 -5.5 2.4 11.0 880 5.0 -5.0 2.3 11.6 900 4.9 -4.4 2.1 12.0 2 10/28/98 e PTB 20006 Typical Performance Gain & Efficiency vs. Frequency 14 80 70 Efficiency (%) 60 Gain (dB) 13 12 50 Gain (dB) 11 VCC = 25 V 40 10 ICQ = 50 mA Pout = 4 W 30 9 840 855 870 885 900 Efficiency (%) 15 (as measured in a broadband circuit) 20 915 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20006 Uen Rev. D 10-28-98