e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 15.0 12.5 VCC = 24 V 10.0 ICQ = 100 mA f = 960 MHz 200 08 LOT 7.5 COD E 5.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 6.7 Adc Total Device Dissipation at Tflange = 25°C PD 65 Watts 0.4 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.7 °C/W 1 9/28/98 e PTB 20008 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz) Gpe 9.5 10 11.5 dB Collector Efficiency (VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA, f = 960 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 24 Vdc, Pout = 10 W(PEP), ICQ = 100 mA, f1 = 959.999 MHz, f2 = 960.000 MHz) IMD — -32 — dBc Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA f = 960 MHz—all phase angles at frequency of test) Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 10 W, ICQ = 100 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 935 1.5 -2.1 1.6 2.3 960 3.5 4.6 2.1 -3.8 2 e PTB 20008 Typical Performance Gain & Efficiency vs. Frequency VCC = 24 V Pout = 10 W Gain (dB) 13 70 12 60 Efficiency (%) 11 10 50 40 Gain (dB) 9 8 920 80 Efficiency (%) 14 (as measured in a broadband circuit) 30 930 940 950 960 20 970 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20008 Uen Rev. D 09-28-98