e PTB 20051 6 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 1.465–1.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 9.0 7.5 200 51 6.0 LOT COD E 4.5 VCC = 26 V 3.0 ICQ = 40 mA f = 1.501 GHz 1.5 0.0 0 0.5 1 1.5 2 Input Power (Watts) Package 20201 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.7 Adc Total Device Dissipation at Tflange = 25°C PD 28 Watts 0.16 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 6.2 °C/W 1 9/28/98 e PTB 20051 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 10 V, IC = 0.7 A hFE 20 50 120 — Symbol Min Typ Max Units Gpe 8.0 — — dB P-1dB 6.5 — — Watts ηC 35 — — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.501 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA) Z Source Frequency Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Z Load Z Source Z Load GHz R jX R jX 1.465 10.7 11.2 11.9 21.0 1.489 9.4 11.8 10.2 20.3 1.513 8.1 12.8 9.7 18.3 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98