e PTB 20177 150 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 960 MHz Characteristics - Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 200 160 201 77 120 LOT COD E 80 VCC = 26 V 40 ICQ = 400 mA Total f = 960 MHz 0 0 5 10 15 20 25 30 Input Power (Watts) Package 20224 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 25.0 Adc Total Device Dissipation at Tflange = 25°C PD 330 Watts 1.89 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W 1 9/28/98 e PTB 20177 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 960 MHz) Gpe 7.5 8.5 — dB Gain at PEP (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz) Gpe 8 9 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 960 MHz) ηC 50 — — % Collector Efficiency at PEP (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz) ηC 35 — — % IMD — -30 -28 dBc Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Intermodulation Distortion (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f1 = 959.9 MHz, f2 = 960.0 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total ) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 925 4.3 -3.6 3.8 -1.8 940 4.1 -3.6 3.5 -1.4 960 3.7 -3.4 3.1 -0.9 2 5/19/98 e PTB 20177 Typical Performance Output Power vs. Supply Voltage Gain vs. Frequency (as measured in a broadband circuit) 11 170 VCC = 26 V 160 ICQ = 400 mA Total Pout = 150 W 10 150 Gain (dB) Output Power (Watts) 180 140 130 ICQ = 400 mA Total Pin = 20 W f = 960 MHz 120 110 8 7 925 100 17 19 21 23 25 9 27 930 935 Vcc, Supply Voltage 940 945 950 955 960 Frequency (MHz) Efficiency vs. Output Power Intermodulation Distortion vs. Power Output 60 -20 50 -24 IMD (dBc) Efficiency (%) VCC = 26 V 40 30 20 VCC = 26 V 10 ICQ = 400 mA Total f = 960 MHz ICQ = 400 mA Total f1 = 959.90 MHz -28 f2 = 960.00 MHz -32 -36 -40 0 70 85 100 115 130 145 60 160 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 80 90 100 110 120 130 140 150 Output Power (Watts-PEP) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 5/19/98 70 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20177 Uen Rev. C 09-28-98