FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Suitable for applications to 5 GHz SEE PACKAGE OUTLINE FOR MARKING CODE DESCRIPTION AND APPLICATIONS The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL Power at 1dB Gain Compression P1dB VDS = 10V; IDS = 200 mA 30 31 13.5 15.0 dBm ΓS and ΓL tuned for Optimum IP3 Power Gain at dB Gain Compression G1dB VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 Maximum Stable Gain MSG S21/S12 Power-Added Efficiency 3 -Order Intermodulation Distortion 20 dB 50 % -46 dBc PIN = 0dBm, 50Ω system PAE VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 at 1dB Gain Compression rd VDS = 10 V; IDS = 200mA IM3 ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 mA POUT = 19 dBm (single-tone level) Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 1100 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 720 mS Gate-Source Leakage Current IGSO VGS = -3 V 20 50 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 2.4 mA 0.7 0.9 1.4 V Gate-Source Breakdown Voltage |VBDGS| IGS = 2.4 mA 6 8 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 2.4 mA 20 22 V Thermal Resistivity (channel-to-case) ΘCC See Note on following page 25 °C/W Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis 480 650 800 mA Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Max Units -3V < VGS < +0V 12 V VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V IDSS mA Gate Current IG Forward / Reverse current +20/-20 mA PIN Under any acceptable bias state 575 mW Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage 150 ºC Total Power Dissipation PTOT See De-Rating Note below 6.0 W Comp. Under any bias conditions 5 dB RF Input Power 2 Gain Compression 3 Min -40 Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22°C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously % 1 Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 3.5 - (0.04W/°C) x TPACK where TPACK = source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C source lead temperature: PTOT = 6.0 - (0.04 x (55 – 22)) = 4.68W • For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package. • Note on Thermal Resistivity: The nominal value of 25°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT • BIASING GUIDELINES Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD1000AS. Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 3.25 Ω for the recommended 200mA operating point. The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. • PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT (dimensions in millimeters – mm) PACKAGE MARKING CODE Example: f1ZD P1F f = Filtronic 1ZD = Lot / Date Code P1F = Status, Part Code, Part Type All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT • TYPICAL RF PERFORMANCE (VDS = 10V IDS = 200mA f = 1800 MHz): Power Transfer Characteristic 3.50 31.00 3.00 29.00 Output Power (dBm) 2.00 25.00 1.50 23.00 Pout 21.00 Comp Point 1.00 19.00 .50 17.00 .00 15.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 Gain Compression (dB) 2.50 27.00 -.50 18.00 Input Power (dBm) 70.00% 70.00% 60.00% 60.00% 50.00% 50.00% PAE 40.00% Eff. 40.00% 30.00% 30.00% 20.00% 20.00% 10.00% 10.00% .00% 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 Drain Efficiency (%) PAE (%) Drain Efficiency and PAE .00% 18.00 Input Power (dBm) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT IM Products vs. Input Power -15.00 -20.00 -25.00 25.00 Pout -30.00 Im3, dBc 23.00 -35.00 -40.00 21.00 IM Products (dBc) Output Power (dBm) 27.00 -45.00 19.00 -50.00 17.00 2.00 -55.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 Input Power (dBm) Note: Graph above shows Input and Output power as single carrier or single-tone levels. FPD1000AS IP3 CONTOURS 1800 MHz 2. 0 0.6 0.8 1.0 Swp Max 222 0. 4 48 dBm 46 dBm 44 dBm 42 dBm 40 dBm 0 3. 4.0 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 - 0.2 - 5.0 -4. 0 Phone: +1 408 850-5790 Fax: +1 408 850-5766 -1.0 - 0.8 -0. 6 -2 .0 -3 .0 NOTE: IP3 contours generated with PIN .4 = 11dB -0 back-off from P1dB. Local maxima for best linearity located at: ΓL = 40 + j55 Ω and ΓL = 113 + j70 Ω with ΓS = 15 + j12 Ω http:// www.filtronic.co.uk/semis Swp Min 1 Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT FPD1000AS POWER CONTOURS 1800 MHz Swp Max 215 1.0 0.8 0.6 2.0 0.4 0.2 28 dBm 29 dBm 30 dBm 3.0 4.0 5.0 31 dBm 32 dBm 0.2 0 0.4 0.6 10.0 0.8 1.0 2.0 3.0 4.0 5.0 10. 0 -10.0 -0.2 -5.0 NOTE: -4.0 at constant Power contours measured input power, level -3.0 set to meet nominal P1dB rating at optimum match point. Optimum match: ΓS = 3 – j2 Ω2.0and ΓL = 25 + j5 Ω -0.4 0.6 0.8 Swp Min 1 1.0 FPD1000AS I-V Curves .800 VGS = 0V Drain-Source Current (A) .700 VGS = -0.25V .600 .500 VGS = -0.5V .400 .300 VGS = -0.75V .200 VGS = -1.0V .100 .000 0.00 VGS = -1.25V 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 Drain-Source Voltage (V) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT • RF PERFORMANCE OVER FREQUENCY: FPD1000AS at VDS = 10V and IDS = 200mA 30.0 25.0 20.0 Ga in 15.0 S21 MSG 10.0 5.0 0.0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) FPD1000AS WCDMA ACPR 1900 MHz DOWNLINK Pk/Avg = 9dB 0.01% 0 40 30 -10 20 Output Power (dBm) 0 -30 -10 -40 Output Power -20 ACPR (dBc) -20 10 ACPR (5 MHz) -30 ACPR (10MHz) -50 -40 -60 -50 -60 -70 3 4 5 6 7 8 9 10 11 12 13 14 Input Power (dBm) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected] FPD1000AS 1W PACKAGED POWER PHEMT • STANDARD EVALUATION BOARD (1.70-1.85 GHZ): See Website for complete list of Evaluation Boards VGG ≈ -0.5V VDD = +10V C6 C8 R2 C7 C5 L2 RF INPUT C9 L1 C1 C4 R1 C2 Q1 RF OUTPUT NOTE: AutoCAD drawing available on Website. (Model EL-BD-000011-006-A) BILL OF MATERIALS Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 L1 L2 R1 R2 Q1 Manufacturer’s Part Number ATC600S3R9CW250 ATC600S5R6CW250 ATC600S330JW250 ATC600S330JW250 T491B105M035AS7015 ATC600S680JW250 T491B105M035AS7015 ATC600S2R0BW250 0604HQ-1N1 0604HQ-1N1 RCI-0402-27R0J RCI-0603-12R0J FPD1000AS PC-SP-000010-006 TF-SP-000012 142-0711-841 AMP-103185-2 TF-SP-000003 Description Capacitor, 3.9 pF, 0603, ATC 600, tol. +0.25pF Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF Deleted Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 68 pF, 0603, ATC 600 Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 2 pF, 0603, ATC 600, tol. +0.1pF Inductor, 1.1 nH, Coilcraft High Q Surface Inductor, 1.1 nH, Coilcraft High Q Surface Resistor, 27 W, 0402, IMS, tol. +5% Resistor, 12 W, 0603, IMS, tol. +5% 1w Packaged Power pHEMT, Filtronic PCB, Rogers R04003, 0.012”(0.3mm), 0.5oz. Cu Carrier Connector, RF, SMA End Launch, Jack Assy, Connector, DC, 0.100 on center, 0.025 sq. posts, Center Block for P100 Package Screw, #0-80 Quantity 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 8 NOTE: 10-12 mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive via plugging material in order to achieve optimal heatsinking. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filtronic.co.uk/semis Revised: 05/26/05 Email: [email protected]