PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE (1.8 GHz) ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 4GHz SEE PACKAGE OUTLINE FOR MARKING CODE DESCRIPTION AND APPLICATIONS The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL Power at 1dB Gain Compression P1dB VDS = 10V; IDQ = 720 mA 35.5 36.5 9.5 10.5 dBm ΓS and ΓL tuned for Optimum IP3 Power Gain at dB Gain Compression G1dB VDS = 10V; IDQ = 720 mA ΓS and ΓL tuned for Optimum IP3 Maximum Stable Gain MSG S21/S12 Power-Added Efficiency 3 -Order Intermodulation Distortion 19 dB 45 % PIN = 0dBm, 50Ω system PAE VDS = 10V; IDQ = 720 mA ΓS and ΓL tuned for Optimum IP3 at 1dB Gain Compression rd VDS = 10 V; IDQ = 720 mA IP3 VDS = 10V; IDQ = 720 mA ΓS and ΓL tuned for Optimum IP3 -47 -44 dBc 2.3 2.65 A POUT = 25.5 dBm (single-tone level) Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 3.6 A Transconductance GM VDS = 1.3 V; VGS = 0 V 2.4 S Gate-Source Leakage Current IGSO VGS = -3 V 70 170 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 8 mA 0.7 0.9 1.4 V Gate-Source Breakdown Voltage |VBDGS| IGS = 8 mA 6 8 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 8 mA 20 22 V Thermal Resistivity (channel-to-case) ΘCC See Note on following page 12 °C/W Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com 1.9 Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Max Units -3V < VGS < +0V 12 V VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V IDSS mA Gate Current IG Forward / Reverse current +25/-4 mA PIN Under any acceptable bias state 1.5 W Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage 150 ºC Total Power Dissipation PTOT See De-Rating Note below 12 W Comp. Under any bias conditions 5 dB RF Input Power 2 Gain Compression 3 Min -40 Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22°C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously % 1 Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 12 - (0.083W/°C) x TPACK where TPACK = source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C source lead temperature: PTOT = 12 - (0.083 x (55 – 22)) = 9.3W • Note on Thermal Resistivity: The nominal value of 12°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source flange. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • BIASING GUIDELINES ¾ Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. ¾ Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD4000AF. ¾ Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 0.7 Ω for the recommended 720mA operating point. This approach will require a DC Source resistor capable of at least 365mW dissipation. ¾ The recommended 720mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. • PACKAGE OUTLINE (dimensions in millimeters – mm) PACKAGE MARKING CODE Example: f1ZD P2F f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type Status: D=Development P = Production Part Code denotes model (e.g. FPD4000AF) Part Type: F = FET (pHEMT) All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • TYPICAL RF PERFORMANCE (VDS = 10V IDQ = 720 mA f = 2000 MHz): Power Transfer Characteristic 3.5 36.0 Pout 3.0 Comp Point 34.0 32.0 2.0 30.0 1.5 28.0 1.0 26.0 0.5 24.0 22.0 10.0 Gain Compression (dB) Output Power (dBm) 2.5 0.0 -0.5 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 Input Power (dBm) 70.0% 70.0% 60.0% 60.0% 50.0% 50.0% PAE (%) PAE Eff. 40.0% 40.0% 30.0% 30.0% 20.0% 20.0% 10.0% 10.0% .0% 10.0 Drain Efficiency (5) Drain Efficiency and PAE .0% 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 Input Power (dBm) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT IM Products vs. Input Power -15.0 32.0 -20.0 Pout Im3, dBc -25.0 -30.0 28.0 -35.0 IM Products (dBc) Output Power (dBm) 30.0 -40.0 26.0 -45.0 24.0 -50.0 22.0 -55.0 11.0 13.0 15.0 17.0 19.0 21.0 Input Power (dBm) Note: Graph above shows Input and Output power as single carrier or single-tone levels. FPD4000AF IP3 CONTOURS 2 GHz 1.0 0.8 IP3_dBm = 46 dBm 2. 0 0.6 IP3_dBm = 48 dBm Swp Max 189 0. 4 IP3_dBm = 50 dBm 0 3. 4.0 5.0IP3_dBm = 44 dBm 0.2 10.0 IP3_dBm = 56 dBm 10.0 5.0 4.0 3.0 -5.0 -4. 0 .0 -1.0 -0.8 -0. 6 .0 -2 -3 IP3_dBm = 52 dBm -0.4 Fax: +1 408 850-5766 NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maximum for best linearity located at: ΓS = 15 – j12 Ω and ΓL ≈ 15 – j15 Ω (IP3 value labels on contours are fitted values, and do not represent actual device performance.) Swp Min -10.0 -0.2 IP3_dBm = 54 dBm Phone: +1 408 850-5790 2.0 1.0 0.8 0.6 0.2 0 0.4 IP3_dBm = 42 dBm IP3_dBm = 58 dBm http:// www.filcs.com 1 Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT 0 35 -10 30 -20 25 -30 20 ADJ CHANNEL (5 MHz) ALT CHANNEL (10 MHz) OUTPUT POWER -40 15 -50 10 -60 5 -70 Output Power (dBm) ACPR (dBc) FPD4000AF ADJACENT AND ALTERNATE CHANNEL POWER RATIOS WCDMA BTS FORWARD 10.15 dB Pk/Avg 0.001% f = 2.5 GHz STD. BIAS 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Input Power (dBm) ACPR measurement at 4 dB back-off from P1dB with WCDMA BTS Forward modulation: Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT FPD4000AF P1dB CONTOURS 2 GHz 2. 0 0. 6 0.8 1.0 Swp Max 194 0. 3.0 10.0 2.0 1.0 0.8 0.6 0.4 0.2 5.0 0.2 0 4.0 4 Pout_dBm = 36 dBm 3.0 NOTE: 4.0 Power contours measured at constant 5.0 input power, level set to meet nominal P1dB rating at optimum 10.0 match point. Optimum match: ΓS = 3 – j11.5 Ω and ΓL = 15 – j6.5 Ω Pout_dBm = 34 dBm -10.0 -0.2 -5.0 Pout_dBm = 32 dBm -4 . 0 -3 .0 . -0 4 Pout_dBm = 26 dBm Swp Min 1 -1.0 Pout_dBm = 28 dBm -0.8 -0. 6 .0 -2 Pout_dBm = 30 dBm FPD4000AF I-V Curves 2.5 VGS = 0V Drain-Source Current (A) 2.0 VGS = -0.25V 1.5 VGS = -0.50V 1.0 VGS = -0.75V 0.5 VGS = -1.0V 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Drain-Source Voltage (V) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • RF PERFORMANCE OVER FREQUENCY: Max Stable Gain FPD4000AF 30 20 MSG 10 S21 0 -10 -20 1 2 3 4 5 6 7 8 Frequency (GHz) 9 10 11 12 Note: The FPD4000AF is suitable for applications up to 4 GHz. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 08/09/04 Email: [email protected] PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • STANDARD EVALUATION BOARD (1.70-1.85 GHZ): Vg Vd C10 C6 C5 C2 C1 RF IN C3 C9 R1 C7 C4 Q1 C8 4 W PA TB2 NOTE: AutoCAD drawing available on Website Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 Q1 Bill of Materials for Evaluation Board, FPD4000AF EV-BL-000026-002-A Part Number Description ATC600S0R9JW250 Capacitor, 0.9 pF, 0603, ATC 600, tol. +5% ATC600S3R0JW250 Capacitor, 3.0 pF, 0603, ATC 600, tol. +5% ATC600S1R8JW250 Capacitor, 1.8 pF, 0603, ATC 600, tol. +5% ATC600S1R0JW250 Capacitor, 1.0 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% T491B105M035AS7015 Capacitor, 1 µF, SMD-B, Kemet, tol. +20% ATC600S1R5JW250 Capacitor, 1.5 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% T491B105M035AS7015 Capacitor, 1 µF, SMD-B, Kemet, tol. +20% RCI-0603-10R1J Resistor, 100 Ω, 0603, IMS, tol. +5% FPD4000AF Packaged Discrete pHEMT, Filtronic PC-SP-000022-002 PCB, FPD4000AF Eval Board, 2 GHz 142-0711-841 Connector, RF, SMA End Launch, Jack Assy, Johnson AMP-103185-2 Connector, DC, 0.100 on center, 0.025 sq. posts, Tyco TF-SP-000025 Test Fixture Base, Flange Mount Package, 2 GHz Screw, #2-56 Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Quantity 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 20 Revised: 08/09/04 Email: [email protected]