TI TPS54620RGYT

TPS54620
www.ti.com ........................................................................................................................................................................................................ SLVS949 – MAY 2009
17V Input, 6A Output, Synchronous Step Down Switcher
With Integrated FET in 3.5mm x 3.5mm Package(SWIFT™)
•
FEATURES
1
•
•
•
•
•
•
•
•
2
•
Integrated 26mΩ / 19mΩ MOSFETs
Split Power Rail: 1.6V to 17V on PVIN
200kHz to 1.6MHz Switching Frequency
Synchronizes to External Clock
0.8V ±1% Voltage Reference Over Temperature
Low 2uA Shutdown Quiscent Current
Monotonic Start-Up into Prebiased Outputs
–40°C to 150°C Operating Junction
Temperature Range
Adjustable Slow Start/Power Sequencing
•
•
•
Power Good Output Monitor for Undervoltage
& Overvoltage
Adjustable Input Undervoltage Lockout
Supported by SwitcherPro™ Software Tool
For SWIFT™ Documentation and
SwitcherPro™, visit http://www.ti.com/swift
APPLICATIONS
•
•
•
High Density Distributed Power Systems
High Peformance Point of Load Regulation
Broadband, Networking and Optical
Communications Infrastructure
DESCRIPTION
The TPS54620 in thermally enhanced 3.5mm x 3.5mm QFN package is a full featured 17V, 6A synchronous step
down converter which is optimized for small designs through high efficiency and integrating the high-side and
low-side MOSFETs. Further space savings are achieved through current mode control, which reduces
component count, and by selecting a high switching frequency, reducing the inductor's footprint.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone
power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and
the open drain power good pins.
Cycle by cycle current limiting on the high-side fet protects the device in overload situations and is enhanced by
a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit
which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part
when die temperature rises too high.
WHITE SPACE
SIMPLIFIED SCHEMATIC
100
PVIN
VIN
TPS54620
BOOT
VIN
Cin
8V
95
Cboot
90
85
EN
PH
Co
PWRGD
R1
17 V
12 V
Efficiency - %
VOUT
Lo
80
75
70
VSENSE
SS/TR
RT/CLK
COMP
Css
Rrt C2
R3
65
R2
GND
60
PowerPAD
55
VOUT = 3.3 V
Fsw = 480 kHz
50
C1
0
1
2
3
Load Current - A
4
5
6
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SWIFT, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TPS54620
SLVS949 – MAY 2009 ........................................................................................................................................................................................................ www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
(1)
(2)
TJ
PACKAGE
PART NUMBER (2)
–40°C to 150°C
14 Pin QFN
TPS54620RGY
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
The RGY package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54620RGYR). See applications
section of data sheet for layout information
ABSOLUTE MAXIMUM RATINGS (1)
over operating temperature range (unless otherwise noted)
Input Voltage
VALUE
UNIT
VIN
–0.3 to 20
V
PVIN
–0.3 to 20
V
EN
–0.3 to 3
V
BOOT
–0.3 to 27
V
VSENSE
–0.3 to 3
V
COMP
–0.3 to 3
V
PWRGD
–0.3 to 6
V
SS/TR
–0.3 to 3
V
RT/CLK
–0.3 to 6
V
BOOT-PH
Output Voltage
0 to 7
V
PH
–1 to 20
V
PH 10ns Transient
–3 to 20
V
Vdiff(GND to PowerPAD)
Source Current
Sink Current
–0.2 to 0.2
V
±100
µA
PH
Current Limit
A
PH
Current Limit
A
PVIN
Current Limit
A
±200
µA
–0.1 to 5
mA
2
kV
RT/CLK
COMP
PWRGD
Electrostatic Discharge (HBM) QSS 009-105 (JESD22-A114A)
Electrostatic Discharge (CDM) QSS 009-147 (JESD22-C101B.01)
500
V
Operating Junction Temperature
–40 to 150
°C
Storage Temperature
–65 to 150
°C
(1)
2
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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PACKAGE DISSIPATION RATINGS (1)
(1)
(2)
(3)
(2) (3)
PACKAGE
THERMAL IMPEDANCE
JUNCTION TO AMBIENT
ψJT THERMAL CHARACTERISTIC
JUNCTION TO TOP
RGY
32°C/W
5°C/W
Maximum power dissipation may be limited by overcurrent protection
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
Test board conditions:
a. 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch
b. 2 oz. copper traces located on the top of the PCB
c. 2 oz. copper ground planes on the 2 internal layers and bottom layer
d. 4 thermal vias located under the device package
ELECTRICAL CHARACTERISTICS
TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage
1.6
17
V
VIN operating input voltage
4.5
17
V
VIN internal UVLO threshold
VIN rising
4.0
VIN internal UVLO hysterisis
4.5
150
VIN shutdown supply Current
EN = 0 V
VIN operating – non switching supply current
VSENSE = 810 mV
V
mV
2
5
µA
600
800
µA
1.21
1.26
V
ENABLE AND UVLO (EN PIN)
Enable threshold
Rising
Enable threshold
Falling
Input current
EN = 1.1 V
1.15
µA
Hysteresis current
EN = 1.3 V
3.4
µA
1.10
1.17
VOLTAGE REFERENCE
0 A ≤ Iout ≤ 6 A
Voltage reference
0.792
0.800
0.808
V
BOOT-PH = 3 V
32
60
mΩ
BOOT-PH = 6 V
26
40
mΩ
VIN = 12 V
19
30
mΩ
MOSFET
High-side switch resistance
High-side switch resistance
(1)
Low-side Switch Resistance (1)
ERROR AMPLIFIER
Error amplifier Transconductance (gm)
–2 µA < ICOMP < 2 µA, V(COMP) = 1 V
Error amplifier dc gain
VSENSE = 0.8 V
Error amplifier source/sink
V(COMP) = 1 V, 100 mV input overdrive
1000
Start switching threshold
COMP to Iswitch gm
1300
µMhos
3100
V/V
±110
µA
0.25
V
16
A/V
11
A
10
A
2.3
A
CURRENT LIMIT
High-side switch current limit threshold
8
Low-side switch sourcing current limit
7
Low-side switch sinking current limit
(1)
Measured at pins
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
160
175
°C
10
°C
THERMAL SHUTDOWN
Thermal shutdown
Thermal shutdown hysterisis
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Minimum switching frequency
Rrt = 240 kΩ (1%)
180
Switching frequency
Rrt = 100 kΩ (1%)
400
Maximum switching frequency
Rrt = 29 kΩ (1%)
1440
Minimum pulsewidth
200
220
kHz
480
560
kHz
1600
1760
kHz
20
RT/CLK high threshold
2
RT/CLK low threshold
RT/CLK falling edge to PH rising edge delay
ns
0.8
Measure at 500 kHz with RT resistor in series
V
66
Switching frequency range (RT mode set point
and PLL mode)
V
200
ns
1600
kHz
135
ns
PH (PH PIN)
Minimum on time
Measured at 90% to 90% of VIN, 25°C, IPH = 2A
Minimum off time
BOOT-PH ≥ 3 V
94
0
ns
BOOT (BOOT PIN)
BOOT-PH UVLO
2.1
3
V
60
mV
SLOW START AND TRACKING (SS/TR PIN)
SS charge current
SS/TR to VSENSE matching
µA
2.3
V(SS/TR) = 0.4 V
29
VSENSE falling (Fault)
91
% Vref
VSENSE rising (Good)
94
% Vref
VSENSE rising (Fault)
109
% Vref
VSENSE falling (Good)
106
POWER GOOD (PWRGD PIN)
VSENSE threshold
Output high leakage
VSENSE = Vref, V(PWRGD) = 5.5 V
Output low
I(PWRGD) = 2 mA
Minimum VIN for valid output
V(PWRGD) < 0.5V at 100 µA
Minimum SS/TR voltage for PWRGD
4
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30
0.6
% Vref
100
nA
0.3
V
1
V
1.4
V
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DEVICE INFORMATION
PIN ASSIGNMENTS
RGY (Top View )
RT /CLK
1
PWRGD
14
GND 2
13 BOOT
GND 3
12 PH
PVIN 4
PowerPAD
(15)
PVIN 5
11 PH
10 EN
VIN 6
9 SS /TR
7
VSENSE
8
COMP
PIN FUNCTIONS
PIN
NAME
RT/CLK
DESCRIPTION
No.
1
Automatically selects between RT mode and CLK mode. An external timing resistor adjusts the switching
frequency of the device; In CLK mode, the device synchronizes to an external clock.
GND
2, 3
Return for control circuitry and low-side power MOSFET.
PVIN
4, 5
Power input. Supplies the power switches of the power converter.
VIN
6
Supplies the control circuitry of the power converter.
VSENSE
7
Inverting input of the gm error amplifier.
COMP
8
Error amplifier output, and input to the output switch current comparator. Connect frequency compensation to this
pin.
SS/TR
9
Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference rise time.
The voltage on this pin overrides the internal reference. It can be used for tracking and sequencing.
EN
10
Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors.
PH
11, 12
The switch node.
BOOT
13
A bootstrap cap is required between BOOT and PH. The voltage on this cap carries the gate drive voltage for the
high-side MOSFET.
PWRGD
14
Power Good fault pin. Asserts low if output voltage is low due to thermal shutdown, dropout, over-voltage, EN
shutdown or during slow start.
PowerPAD
15
Thermal pad of the package and signal ground. It must be soldered down for proper operation.
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FUNCTIONAL BLOCK DIAGRAM
PWRGD
VIN
EN
Shutdown
Ip
Ih
Enable
Comparator
Thermal
Shutdown
PVIN PVIN
UVLO
Shutdown
UV
Shutdown
Logic
Logic
Enable
Threshold
OV
Boot
Charge
Current
Sense
Minimum Clamp
Pulse Skip
ERROR
AMPLIFIER
VSENSE
BOOT
Boot
UVLO
SS/TR
HS MOSFET
Current
Comparator
Voltage
Reference
Power Stage
& Deadtime
Control
Logic
PH
PH
Slope
Compensation
VIN
Overload Recovery
and
Clamp
Oscillator
with PLL
Regulator
LS MOSFET
Current Limit
Current
Sense
GND
GND
COMP
6
RT/CLK
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POWERPAD
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TYPICAL CHARACTERISTICS
CHARACTERISTIC CURVES
HIGH-SIDE Rdson vs TEMPERATURE
LOW-SIDE Rdson vs TEMPERATURE
40
30
VIN = 12 V
RDS(on) − On Resistance − mΩ
RDS(on) − On Resistance − mΩ
VIN = 12 V
35
30
25
20
−50
−25
0
25
50
75
100
125
27
24
21
18
15
−50
150
25
50
75
100
Figure 1.
Figure 2.
VOLTAGE REFERENCE vs TEMPERATURE
125
150
OSCILLATOR FREQUENCY vs TEMPERATURE
490
fO − Oscillator Frequency − kHz
Vref − Voltage Resistance − V
0
TJ − Junction Temperature − °C
0.805
0.803
0.801
0.799
0.797
0.795
−50
−25
0
25
50
75
100
125
RT = 100 kΩ
485
480
475
470
−50
150
−25
0
25
50
75
100
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
Figure 3.
Figure 4.
SHUTDOWN QUIESCENT CURRENT vs INPUT VOLTAGE
125
150
PIN HYSTERISIS CURRENT vs TEMPERATURE
3.50
4
VIN = 12 V
EN = 1.3 V
En Pin Hysterisis Current − µA
EN = 0 V
Isd − Shutdown Quescent − µA
−25
TJ − Junction Temperature − °C
TJ = 150°C
3
TJ = 25°C
TJ = −40°C
2
1
0
3
6
9
12
15
18
3.45
3.40
3.35
3.30
−50
−25
0
25
50
75
100
VI − Input Voltage − V
TJ − Junction Temperature − °C
Figure 5.
Figure 6.
125
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TYPICAL CHARACTERISTICS (continued)
PIN PULLUP CURRENT vs TEMPERATURE
PIN UVLO THRESHOLD vs TEMPERATURE
1.20
1.220
VIN = 12 V
En Pin UVLO Threshold − V
IP − En Pin On Pullup − uA
VIN = 12 V
EN = 1.1 V
1.15
1.10
−50
−25
0
25
50
75
100
125
1.210
1.205
1.200
−50
150
−25
0
25
50
75
100
TJ − Junction Temperature − Deg
TJ − Junction Temperature − °C
Figure 7.
Figure 8.
NON-SWITCHING OPERATING QUIESCENT CURRENT
(VIN) vs INPUT VOLTAGE
125
150
SLOW START CHARGE CURRENT vs TEMPERATURE
2.5
ISS − Slow Start Charge Current − µA
Non-Switching Operating Quiescent Current − µA
1.215
800
TJ = −40°C
700
TJ = −25°C
TJ = 150°C
600
500
2.4
2.3
2.2
2.1
−50
400
3
6
9
12
−25
15
0
25
50
75
100
125
150
TJ − Junction Temperature − °C
VI − Input Voltage − V
Figure 9.
Figure 10.
(SS/TR - VSENSE) OFFSET vs TEMPERATURE
PWRGD THRESHOLD vs TEMPERATURE
0.04
0.03
0.02
0.01
−50
8
120
PWRGD Threshold Current − µA
(SS/TR - Vsense) Offset − V
0.05
−25
0
25
50
75
100
125
150
VIN = 12 V
VSENSE Rising
110
VSENSE Falling
100
VSENSE Rising
90
80
−50
VSENSE Falling
−25
0
25
50
75
100
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
Figure 11.
Figure 12.
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125
150
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TYPICAL CHARACTERISTICS (continued)
HIGH-SIDE CURRENT LIMIT THRESHOLD vs INPUT
VOLTAGE
MINIMUM CONTROLLABLE ON TIME vs TEMPERATURE
120
Minimum Controllable On Time − ns
IcI − Current Limit Threshold − A
13
12
11
10
TJ = −40°C
9
TJ = 25°C
TJ = 150°C
8
7
6
5
9
13
110
100
90
80
70
−50
5
1
VIN = 12 V
IOUT = 2A
17
25
50
75
100
VI − Input Voltage − V
Figure 13.
Figure 14.
125
150
BOOT-PH UVLO THRESHOLD vs TEMPERATURE
2.2
6.0
BOO-PH UVLO Threshold − V
Dmin − Minimum Controllable Duty Ratio − %
0
TJ − Junction Temperature − °C
MINIMUM CONTROLLABLE DUTY RATIO vs JUNCTION
TEMPERATURE
5.0
4.0
RT = 100 kΩ
VIN =12 V
IOUT = 2 A
3.0
−50
−25
−25
0
25
50
75
100
125
150
2.1
2.0
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature − °C
TJ − Junction Temperature − Deg
Figure 15.
Figure 16.
OVERVIEW
The device is a 17-V, 6-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To
improve performance during line and load transients the device implements a constant frequency, peak current
mode control which also simplifies external frequency compensation. The wide switching frequency of 200 kHz to
1600 kHz allows for efficiency and size optimization when selecting the output filter components. The switching
frequency is adjusted using a resistor to ground on the RT/CLK pin. The device also has an internal phase lock
loop (PLL) controlled by the RT/CLK pin that can be used to synchronize the switching cycle to the falling edge
of an external system clock.
The device has been designed for safe monotonic startup into pre-biased loads. The default start up is when VIN
is typically 4.0V. The EN pin has an internal pull-up current source that can be used to adjust the input voltage
under voltage lockout (UVLO) with two external resistors. In addition, the EN pin can be floating for the device to
operate with the internal pull up current. The total operating current for the device is approximately 600µA when
not switching and under no load. When the device is disabled, the supply current is typically less than 2µA.
The integrated MOSFETs allow for high efficiency power supply designs with continuous output currents up to 6
amperes. The MOSFETs have been sized to optimize efficiency for lower duty cycle applications.
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TYPICAL CHARACTERISTICS (continued)
The device reduces the external component count by integrating the boot recharge circuit. The bias voltage for
the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor
voltage is monitored by a BOOT to PH UVLO (BOOT-PH UVLO) circuit allowing PH pin to be pulled low to
recharge the boot capacitor. The device can operate at 100% duty cycle as long as the boot capacitor voltage is
higher than the preset BOOT-PH UVLO threshold which is typically 2.1V. The output voltage can be stepped
down to as low as the 0.8V voltage reference (Vref).
The device has a power good comparator (PWRGD) with hysteresis which monitors the output voltage through
the VSENSE pin. The PWRGD pin is an open drain MOSFET which is pulled low when the VSENSE pin voltage
is less than 91% or greater than 109% of the reference voltage Vref and asserts high when the VSENSE pin
voltage is 94% to 106% of the Vref.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power up. A small value capacitor or resistor divider should be coupled to the pin for slow start or critical
power supply sequencing requirements.
The device is protected from output overvoltage, overload and thermal fault consitions. The device minimizes
excessive output overvoltage transients by taking advantage of the overvoltage circuit power good comparator.
When the overvoltage comparator is activated, the high-side MOSFET is turned off and prevented from turning
on until the VSENSE pin voltage is lower than 106% of the Vref. The device implements both high-side MOSFET
overload protection and bidirectional low-side MOSFET overload protections which help control the inductor
current and avoid current runaway. The device also shuts down if the junction temperature is higher than thermal
shutdown trip point. The device is restarted under control of the slow start circuit automatically when the junction
temperature drops 10°C typically below the thermal shutdown trip point.
DETAILED DESCRIPTION
Fixed Frequency PWM Control
The device uses a adjustable fixed frequency, peak current mode control. The output voltage is compared
through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives
the COMP pin. An internal oscillator initiates the turn on of the high-side power switch. The error amplifier output
is converted into a current reference which compares to the high-side power switch current. When the power
switch current reaches current reference generated by the COMP voltage level the high-side power switch is
turned off and the low-side power switch is turned on.
Continuous Current Mode Operation (CCM)
As a synchronous buck converter, the device normally works in CCM (Continuous Conduction Mode) under all
load conditions.
VIN and Power VIN Pins (VIN and PVIN)
The device allows for a variety of applications by using the VIN and PVIN pins together or separately. The VIN
pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input voltage to
the power converter system.
If tied together, the input voltage for VIN and PVIN can range from 4.5V to 17V. If using the VIN separately from
PVIN, the VIN pin must be between 4.5V and 17V, and the PVIN pin can range from as low as 1.6V to 17V. A
voltage divider connected to the EN pin can adjust the either input voltage UVLO appropriately. Adjusting the
input voltage UVLO on the PVIN pin helps to provide consistant power up behavior.
Voltage Reference
The voltage reference system produces a precise ±1% voltage reference over temperature by scaling the output
of a temperature stable bandgap circuit.
10
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Adjusting the Output Voltage
The output voltage is set with a resistor divider from the output (VOUT) to the VSENSE pin. It is recommended to
use 1% tolerance or better divider resistors. Referring to the application schematic of Figure 34, start with a 10
kΩ for R6 and use Equation 1 to calculate R5. To improve efficiency at light loads consider using larger value
resistors. If the values are too high the regulator is more susceptible to noise and voltage errors from the
VSENSE input current are noticeable.
Vo - Vref
R5 =
R6
Vref
(1)
Where Vref = 0.8V
The minimum output voltage and maximum output voltage can be limited by the minimum on time of the
high-side MOSFET and bootstrap voltage (BOOT-PH voltage) respectively. More discussions are located in
Minimum Output Voltage and Bootstrap Voltage (BOOT) and Low Dropout Operation.
Safe Start-up into Pre-Biased Outputs
The device has been designed to prevent the low-side MOSFET from diacharging a prebiased output. During
monotonic pre-biased startup, the low-side MOSFET is not allowed to sink current until the SS/TR pin voltage is
higher than 1.4V.
Error Amplifier
The device uses a transconductance error amplifier. The error amplifier compares the VSENSE pin voltage to the
lower of the SS/TR pin voltage or the internal 0.8V voltage reference. The transconductance of the error amplifier
is 1300 µA/V during normal operation. The frequency compensation network is connected between the COMP
pin and ground.
Slope Compensation
The device adds a compensating ramp to the switch current signal. This slope compensation prevents
sub-harmonic oscillations. The available peak inductor current remains constant over the full duty cycle range.
Enable and Adjusting Under-Voltage Lockout
The EN pin provides electrical on/off control of the device. Once the EN pin voltage exceeds the threshold
voltage, the device starts operation. If the EN pin voltage is pulled below the threshold voltage, the regulator
stops switching and enters low Iq state.
The EN pin has an internal pullup current source, allowing the user to float the EN pin for enabling the device. If
an application requires controlling the EN pin, use open drain or open collector output logic to interface with the
pin.
The device implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin voltage
falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a hysteresis of 150mV.
If an application requires either a higher UVLO threshold on the VIN pin or a secondary UVLO on the PVIN, in
split rail applications, then the EN pin can be configured as shown in Figure 17, Figure 18 and Figure 19. When
using the external UVLO function it is recommended to set the hysteresis to be greater than 500mV.
The EN pin has a small pull-up current Ip which sets the default state of the pin to enable when no external
components are connected. The pull-up current is also used to control the voltage hysteresis for the UVLO
function since it increases by Ih once the EN pin crosses the enable threshold. The UVLO thresholds can be
calculated using Equation 2 and Equation 3.
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TPS54620
VIN
ip
ih
R1
R2
EN
Figure 17. Adjustable VIN Under Voltage Lock Out
TPS54620
PVIN
ip
ih
R1
R2
EN
Figure 18. Adjustable PVIN Under Voltage Lock Out, VIN ≥ 4.5V
TPS54620
PVIN
VIN
ip
ih
R1
R2
EN
Figure 19. Adjustable VIN and PVIN Under Voltage Lock Out
æV
ö
VSTART ç ENFALLING ÷ - VSTOP
è VENRISING ø
R1 =
æ V
ö
Ip ç1 - ENFALLING ÷ + Ih
VENRISING ø
è
R2 =
VSTOP
(2)
R1´ VENFALLING
- VENFALLING + R1(Ip + Ih )
(3)
Where Ih = 3.4 µA, Ip = 1.15 µA, VENRISING = 1.21 V, VENFALLING = 1.17 V
Adjustable Switching Frequency and Synchronization (RT/CLK)
The RT/CLK pin can be used to set the switching frequency of the device in two mode.
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In RT mode, a resistor (RT resistor) is connected between the RT/CLK pin and GND. The switching frequency of
the device is adjustable from 200 kHz to 1600 kHz by placing a maximum of 240 kOhm and minimum of 29 kΩ
respectively. In CLK mode, an external clock is connected directly to the RT/CLK pin. The device is synchronized
to the external clock frequency with PLL.
The CLK mode overrides the RT mode. The device is able to detect the proper mode automatically and switch
from the RT mode to CLK mode.
Adjustable Switching Frequency (RT Mode)
To determine the RT resistance for a given switching frequency, use Equation 4 or the curve in Figure 20. To
reduce the solution size one would set the switching frequency as high as possible, but tradeoffs of the supply
efficiency and minimum controllable on time should be considered.
- 0.997
Rrt(k W ) = 48000 × Fsw (kHz )
-2
(4)
RT − Resistance − kΩ
250
200
150
100
50
0
200
400
600
800
1000
1200
1400
1600
Fsw − Oscillator Frequency − kHz
Figure 20. RT Set Resistor vs Switching Frequency
Synchronization (CLK mode)
An internal Phase Locked Loop (PLL) has been implemented to allow synchronization between 200kHz and
1600kHz, and to easily switch from RT mode to CLK mode.
To implement the synchronization feature, connect a square wave clock signal to the RT/CLK pin with a duty
cycle between 20% to 80%. The clock signal amplitude must transition lower than 0.8V and higher than 2.0V.
The start of the switching cycle is synchronized to the falling edge of RT/CLK pin.
In applications where both RT mode and CLK mode are needed, the device can be configured as shown in
Figure 21. Before the external clock is present, the device works in RT mode and the switching frequency is set
by RT resistor. When the external clock is present, the CLK mode overrides the RT mode. The first time the
SYNC pin is pulled above the RT/CLK high threshold (2.0V), the device switches from the RT mode to the CLK
mode and the RT/CLK pin becomes high impedance as the PLL starts to lock onto the frequency of the external
clock. It is not recommended to switch from the CLK mode back to the RT mode because the internal switching
frequency drops to 100kHz first before returning to the switching frequency set by RT resistor.
RT/CLK
mode select
TPS54620
RT/CLK
Rrt
Figure 21. Works with Both RT mode and CLK mode
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Slow Start (SS/TR)
The device uses the lower voltage of the internal voltage reference or the SS/TR pin voltage as the reference
voltage and regulates the output accordingly. A capacitor on the SS/TR pin to ground implements a slow start
time. The device has an internal pull-up current source of 2.3µA that charges the external slow start capacitor.
The calculations for the slow start time (Tss, 10% to 90%) and slow start capacitor (Css) are shown in
Equation 5. The voltage reference (Vref) is 0.8 V and the slow start charge current (Iss) is 2.3µA.
Tss(ms) =
Css(nF) ´ Vref(V)
Iss(m A)
(5)
When the input UVLO is triggered, the EN pin is pulled below 1.21V, or a thermal shutdown event occurs the
device stops switching and enters low current operation. At the subsequent power up, when the shutdown
condition is removed, the device does not start switching until it has discharged its SS/TR pin to ground ensuring
propper soft start behavior.
Power Good (PWRGD)
The PWRGD pin is an open drain output. Once the VSENSE pin is between 94% and 106% of the internal
voltage reference the PWRGD pin pull-down is de-asserted and the pin floats. It is recommended to use a
pull-up resistor between the values of 10kΩ and 100kΩ to a voltage source that is 5.5V or less. The PWRGD is
in a defined state once the VIN input voltage is greater than 1V but with reduced current sinking capability. The
PWRGD achieves full current sinking capability once the VIN input voltage is above 4.5V.
The PWRGD pin is pulled low when VSENSE is lower than 91% or greater than 109% of the nominal internal
reference voltage. Also, the PWRGD is pulled low, if the input UVLO or thermal shutdown are asserted, the EN
pin is pulled low or the SS/TR pin is below 1.4V.
Bootstrap Voltage (BOOT) and Low Dropout Operation
The device has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and PH
pins to provide the gate drive voltage for the high-side MOSFET. The boot capacitor is charged when the BOOT
pin voltage is less than VIN and BOOT-PH voltage is below regulation. The value of this ceramic capacitor
should be 0.1µF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10V or higher
is recommended because of the stable characteristics over temperature and voltage.
To improve drop out, the device is designed to operate at 100% duty cycle as long as the BOOT to PH pin
voltage is greater than the BOOT-PH UVLO threshold which is typically 2.1V. When the voltage between BOOT
and PH drops below the BOOT-PH UVLO threshold the high-side MOSFET is turned off and the low-side
MOSFET is turned on allowing the boot capacitor to be recharged. In applications with split input voltage rails
100% duty cycle operation can be achieved as long as (VIN – PVIN) > 4V.
Sequencing (SS/TR)
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD
pins.
The sequential method is illustrated in Figure 22 using two TPS54620 devices. The power good of the first
device is coupled to the EN pin of the second device which enables the second power supply once the primary
supply reaches regulation. Figure 23 shows the results of Figure 22.
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PWRGD = 2 V / div
TPS54620
TPS54620
PWRGD
EN
EN
SS/TR
SS/TR
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 v / div
PWRGD
Time = 20 msec / div
Figure 22. Sequencial Start Up Sequence
Figure 23. Sequential Start Up using EN and PWRGD
Figure 24 shows the method implementing ratio-metric sequencing by connecting the SS/TR pins of two devices
together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start
time the pull up current source must be doubled in Equation 5. Figure 25 shows the results of Figure 24.
EN = 2 V / div
TPS54620
EN
Vout1 = 1 V / div
SS/TR
Vout2 = 1 v / div
PWRGD
Time = 20 msec / div
TPS54620
EN
SS/TR
PWRGD
Figure 24. Ratiometric Start Up Sequence
Figure 25. Ratio-metric Startup using Coupled SS/TR
Pins
Ratio-metric and simultaneous power supply sequencing can be implemented by connecting the resistor network
of R1 and R2 shown in Figure 26 to the output of the power supply that needs to be tracked or another voltage
reference source. Using Equation 6 and Equation 7, the tracking resistors can be calculated to initiate the Vout2
slightly before, after or at the same time as Vout1. Equation 8 is the voltage difference between Vout1 and
Vout2.
To design a ratio-metric start up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2
reaches regulation, use a negative number in Equation 6 and Equation 7 for deltaV. Equation 8 results in a
positive number for applications where the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved.
Figure 27 and Figure 28 show the results for positive deltaV and negtive deltaV respectively.
The deltaV variable is zero volt for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (Vssoffset, 29mV) in the slow start circuit and the offset created by the pullup current source (Iss,
2.3µA) and tracking resistors, the Vssoffset and Iss are included as variables in the equations. Figure 29 shows
the result when deltaV = 0V.
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To ensure proper operation of the device, the calculated R1 value from Equation 6 must be greater than the
value calculated in Equation 9.
R1 =
Vout2 + D V
Vssoffset
´
Vref
Iss
(6)
Vref ´ R1
R2 =
Vout2 + DV - Vref
DV = Vout1 - Vout2
R1 > 2800 ´ Vout1- 180 ´ DV
(7)
(8)
(9)
TPS54620
EN
VOUT1
SS/TR
PWRGD
TPS54620
EN
VOUT 2
R1
SS/TR
R2
PWRGD
R4
R3
Figure 26. Ratiometric and Simultaneous Startup Sequence
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
Time = 20 msec / div
Figure 27. Ratio-metric Startup with Vout1 Leading Vout2
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EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
Time = 20 msec / div
Figure 28. Ratio-metric Startup with Vout2 Leading Vout1
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
Time = 20 msec / div
Figure 29. Simultaneous Startup
Output Overvoltage Protection (OVP)
The device incorporates an output overvoltage protection (OVP) circuit to minimize output voltage overshoot. For
example, when the power supply output is overloaded the error amplifier compares the actual output voltage to
the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a
considerable time, the output of the error amplifier demands maximum output current. Once the condition is
removed, the regulator output rises and the error amplifier output transitions to the steady state voltage. In some
applications with small output capacitance, the power supply output voltage can respond faster than the error
amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by
comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP
threshold the high-side MOSFET is turned off preventing current from flowing to the output and minimizing output
overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to
turn on at the next clock cycle.
Overcurrent Protection
The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side
MOSFET and the low-side MOSFET.
High-side MOSFET overcurrent protection
The device implements current mode control which uses the COMP pin voltage to control the turn off of the
high-side MOSFET and the turn on of the low-side MOSFET on a cycle by cycle basis. Each cycle the switch
current and the current reference generated by the COMP pin voltage are compared, when the peak switch
current intersects the current reference the high-side switch is turned off.
Low-side MOSFET overcurrent protection
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While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During
normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side
MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side
sourcing current is exceeded the high-side MOSFET is not turned on and the low-side MOSFET stays on for the
next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing
current limit at the start of a cycle.
The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded the
low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario both MOSFETs are
off until the start of the next cycle.
Thermal Shutdown
The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds
175°C typically. The device reinitiates the power up sequence when the junction temperature drops below 165°C
typically.
Small Signal Model for Loop Response
Figure 30 shows an equivalent model for the device control loop which can be modeled in a circuit simulation
program to check frequency response and transient responses. The error amplifier is a transconductance
amplifier with a gm of 1300µA/V. The error amplifier can be modeled using an ideal voltage controlled current
source. The resistor Roea (2.38 MΩ) and capacitor Coea (20.7 pF) model the open loop gain and frequency
response of the error amplifier. The 1-mV ac voltage source between the nodes a and b effectively breaks the
control loop for the frequency response measurements. Plotting a/c and c/b show the small signal responses of
the power stage and frequency compensation respectively. Plotting a/b shows the small signal response of the
overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the
appropriate load step amplitude and step rate in a time domain analysis.
PH
VOUT
Power Stage
16 A/V
a
b
c
0.8 V
R3 Coea
C2
R1
RESR
VSENSE
CO
COMP
C1
Roea
gm
1300 mA/V
RL
R2
Figure 30. Small Signal Model for Loop Response
Simple Small Signal Model for Peak Current Mode Control
Figure 31 is a simple small signal model that can be used to understand how to design the frequency
compensation. The device power stage can be approximated to a voltage controlled current source (duty cycle
modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is
shown in Equation 10 and consists of a dc gain, one dominant pole and one ESR zero. The quotient of the
change in switch current and the change in COMP pin voltage (node c in Figure 30) is the power stage
transconductance (gmps) which is 16 A/V for the device. The DC gain of the power stage is the product of gmps
and the load resistance (RL) as shown in Equation 11 with resistive loads. As the load current increases, the DC
gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole
moves with load current (see Equation 12). The combined effect is highlighted by the dashed line in Figure 32.
As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover
frequency the same for the varying load conditions which makes it easier to design the frequency compensation.
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VOUT
VC
RESR
RL
gm ps
CO
Figure 31. Simplified Small Signal Model for Peak Current Mode Control
VOUT
Adc
VC
RESR
fp
RL
gm ps
CO
fz
Figure 32. Simplified Frequency Response for Peak Current Mode Control
æ
ç1+
2p
VOUT
= Adc ´ è
VC
æ
ç1+
è 2p
s
ö
÷
´ ¦z ø
ö
s
÷
´ ¦p ø
(10)
Adc = gmps ´ RL
(11)
1
¦p =
C O ´ R L ´ 2p
(12)
¦z =
1
CO ´ RESR ´ 2p
(13)
Where
gmea is the GM amplifier gain ( 1300µA/V)
gmps is the power stage gain (16A/V).
RL is the load resistance
CO is the output capacitance.
RESR is the equivalent series resistance of the output capacitor.
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Small Signal Model for Frequency Compensation
The device uses a transconductance amplifier for the error amplifier and readily supports two of the commonly
used frequency compensation circuits shown in Figure 33. In Type 2A, one additional high frequency pole is
added to attenuate high frequency noise.
The design guideline below are provided for advanced users who prefer to compensate using the general
method. The step-by-step design procedure described in the application section may also be used.
VOUT
R1
VSENSE
COMP Type 2A
Type 2B
Vref
R2
gm ea
Roea
R3
Coea
C2
R3
C1
C1
Figure 33. Types of Frequency Compensation
The general design guidelines for device loop compensation are as follows
1. Determine the crossover frequency fc
2. R3 can be determined by
R3 =
2p ´ ¦ c ´ VOUT ´ Co
gmea ´ Vref ´ gmps
(14)
Where
gmea is the GM amplifier gain ( 1300µA/V)
gmps is the power stage gain (16A/V).
Vref is the reference voltage (0.8V)
æ
ö
1
ç ¦p =
÷
CO ´ RL ´ 2p ø .
3. Place a compensation zero at the dominant pole è
C1 can be determined by
R ´ Co
C1 = L
R3
(15)
4. C2 is optional. It can be used to cancel the zero from the ESR (Equivalent Series Resistance) of the output
capacitor Co.
´ Co
R
C2 = ESR
R3
(16)
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APPLICATION INFORMATION
Design Guide – Step-By-Step Design Procedure
This example details the design of a high frequency switching regulator design using ceramic output capacitors.
A few parameters must be known in order to start the design process. These parameters are typically determined
at the system level. For this example, we start with the following known parameters:
Parameter
Value
Output Voltage
3.3 V
Output Current
6A
Transient Response 1A load step
ΔVout = 5 %
Input Voltage
12 V nominal, 8 V to 17 V
Output Voltage Ripple
33 mV p-p
Start Input Voltage (Rising Vin)
6.528 V
Stop Input Voltage (Falling Vin)
6.190 V
Switching Frequency
480 kHz
Typical Application Schematic
The application schematic of Figure 34 was developed to meet the requirements above. This circuit is available
as the TPS54620EVM-374 evaluation module. The design procedure is given in this section.
Figure 34. Typical Application Circuit
Operating Frequency
The first step is to decide on a switching frequency for the regulator. There is a trade off between higher and
lower switching frequencies. Higher switching frequencies may produce smaller a solution size using lower
valued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency.
However, the higher switching frequency causes extra switching losses, which hurt the converter’s efficiency and
thermal performance. In this design, a moderate switching frequency of 480 kHz is selected to achieve both a
small solution size and a high efficiency operation.
Output Inductor Selection
To calculate the value of the output inductor, use Equation 17. KIND is a coefficient that represents the amount
of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the
output capacitor. Therefore, choosing high inductor ripple currents impact the selection of the output capacitor
since the output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. In
general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from 0.1 to 0.3
for the majority of applications.
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L1 =
Vinm ax - Vout
Vout
×
Io × Kind
Vinm ax × f sw
(17)
For this design example, use KIND = 0.3 and the inductor value is calculated to be 3.08 uH. For this design, a
nearest standard value was chosen: 3.3 uH. For the output filter inductor, it is important that the RMS current and
saturation current ratings not be exceeded. The RMS and peak inductor current can be found from Equation 19
and Equation 20.
Vinmax - Vout
Vout
×
Iripple =
L1
Vinmax × f sw
(18)
ILrms = Io2 +
1 æ Vo × (Vinmax - Vo ) ö
×ç
÷
12 çè Vinmax × L1× f sw ÷ø
2
Iripple
ILpeak = Iout +
2
(19)
(20)
For this design, the RMS inductor current is 6.02 A and the peak inductor current is 6.84 A. The chosen inductor
is a Coilcraft MSS1048 series 3.3 uH. It has a saturation current rating of 7.38 A and a RMS current rating of
7.22 A.
The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
Output Capacitor Selection
There are three primary considerations for selecting the value of the output capacitor. The output capacitor
determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in
load current. The output capacitance needs to be selected based on the more stringent of these three criteria
The desired response to a large change in the load current is the first criteria. The output capacitor needs to
supply the load with current when the regulator can not. This situation would occur if there are desired hold-up
times for the regulator where the output capacitor must hold the output voltage above a certain level for a
specified amount of time after the input power is removed. The regulator is also temporarily not able to supply
sufficient output current if there is a large, fast increase in the current needs of the load such as transitioning
from no load to a full load. The regulator usually needs two or more clock cycles for the control loop to see the
change in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor
must be sized to supply the extra current to the load until the control loop responds to the load change. The
output capacitance must be large enough to supply the difference in current for 2 clock cycles while only allowing
a tolerable amount of droop in the output voltage. Equation 21 shows the minimum output capacitance necessary
to accomplish this.
2 × DIout
Co >
f sw × DVout
(21)
Where ΔIout is the change in output current, Fsw is the regulators switching frequency and ΔVout is the
allowable change in the output voltage. For this example, the transient load response is specified as a 5%
change in Vout for a load step of 1A. For this example, ΔIout = 1.0 A and ΔVout= 0.05 x 3.3 = 0.165 V. Using
these numbers gives a minimum capacitance of 25 µF. This value does not take the ESR of the output capacitor
into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in
this calculation.
Equation 22 calculates the minimum output capacitance needed to meet the output voltage ripple specification.
Where fsw is the switching frequency, Vripple is the maximum allowable output voltage ripple, and Iripple is the
inductor ripple current. In this case, the maximum output voltage ripple is 33mV. Under this requirement,
Equation 22 yields 13.2uF.
22
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Co >
1
1
×
8 × f sw Voripple
Iripple
(22)
Equation 23 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 23 indicates the ESR should be less than 19.7 mOhm. In this case, the ceramic caps’
ESR is much smaller than 19.7 mOhm.
Voripple
Resr <
Iripple
(23)
Additional capacitance de-ratings for aging, temperature and DC bias should be factored in which increases this
minimum value. For this example, a 47 µF 6.3V X5R ceramic capacitor with 3 milliohms of ESR is be used.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 24 can be used
to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 24 yields
485mA.
Vout × (Vinmax - Vout )
Icorms =
12 × Vinmax × L1× f sw
(24)
Input Capacitor Selection
The TPS54620 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 4.7 uF of
effective capacitance on the PVIN input voltage pins and 4.7 uF on the Vin input voltage pin. In some
applications additional bulk capacitance may also be required for the PVIN input. The effective capacitance
includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input
voltage. The capacitor must also have a ripple current rating greater than the maximum input current ripple of the
TPS54620. The input ripple current can be calculated using Equation 25.
Icirms = Iout ×
Vout (Vinmin - Vout )
×
Vinmin
Vinmin
(25)
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor
decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at
least a 25 V voltage rating is required to support the maximum input voltage. For this example, one 10 µF and
one 4.7 uF 25 V capacitors in parallel have been selected as the VIN and PVIN inputs are tied together so the
TPS54620 may operate from a single supply. The input capacitance value determines the input ripple voltage of
the regulator. The input voltage ripple can be calculated using Equation 26. Using the design example values,
Ioutmax=6 A, Cin=14.7 µF, Fsw=480 kHz, yields an input voltage ripple of 213 mV and a rms input ripple current
of 2.95 A.
Ioutmax × 0.25
DVin =
Cin × f sw
(26)
Slow Start Capacitor Selection
The slow start capacitor determines the minimum amount of time it takes for the output voltage to reach its
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This
is also used if the output capacitance is very large and would require large amounts of current to quickly charge
the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the
TPS54620 reach the current limit or excessive current draw from the input power supply may cause the input
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voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The soft start capacitor
value can be calculated using Equation 27. For the example circuit, the soft start time is not too critical since the
output capacitor value is 47 µF which does not require much current to charge to 3.3 V. The example circuit has
the soft start time set to an arbitrary value of 3.5 ms which requires a 10 nF capacitor. In TPS54620, Iss is 2.3
uA and Vref is 0.8V.
Tss(ms) × Iss( m A )
C7 =
Vref ( V )
(27)
Bootstrap Capacitor Selection
A 0.1 uF ceramic capacitor must be connected between the BOOT to PH pin for proper operation. It is
recommended to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have 10V or
higher voltage rating.
Under Voltage Lockout Set Point
The Under Voltage Lock Out (UVLO) can be adjusted using the external voltage divider network of R3 and R4.
R3 is connected between VIN and the EN pin of the TPS54620 and R4 is connected between EN and GND .
The UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or
brown outs when the input voltage is falling. For the example design, the supply should turn on and start
switching once the input voltage increases above 6.528V (UVLO start or enable). After the regulator starts
switching, it should continue to do so until the input voltage falls below 6.190 V (UVLO stop or dissable).
Equation 2 and Equation 3 can be used to calculate the values for the upper and lower resistor values. For the
stop voltages specified the nearest standard resistor value for R3 is 35.7 kΩ and for R4 is 8.06 kΩ.
Output Voltage Feedback Resistor Selection
The resistor divder nework R5 and R6 is used to set the output voltage.For the example design, 10 kOhm was
selected for R6. Using Equation 28, R5 is calculated as 31.25 kOhm. The nearest standard 1% resistor is 31.6
kOhm.
Vo - Vref
R5 =
R6
Vref
(28)
Minimum Output Voltage
Due to the internal design of the TPS54620, there is a minimum output voltage limit for any given input voltage.
The output voltage can never be lower than the internal vlotage reference of 0.8 V. Above 0.8 V, the ouyput
voltage may be limited by the minimum controllable on time. The minimum output voltage in this case is given by
Equation 29
(
)
Voutm in = ontim em in × Fsm ax × (Ioutm in × (RDS2m in )) - Ioutm in × (RL + RDS2m in )
(29)
Where:
Voutmin = minimum achieveable output voltage
Ontimemin = minimum controllable on-time (135 nsec maximum)
Fsmax = maximum switching frequency including tolerance
Vinmax = maximum input voltage
Ioutmax = minimum load current
RDS1min = minimum high side MOSFET on resistance (36-32 mΩ typical)
RDS2min = minimum low side MOSFET on resistance (19 mΩ typical)
RL = series resistance of output inductor
Compensation Component Selection
There are several industry techniques used to compensate DC/DC regulators. The method presented here is
easy to calculate and yields high phase margins. For most conditions, the regulator has a phase margin between
60 and 90 degrees. The method presented here ignores the effects of the slope compensation that is internal to
the TPS54620. Since the slope compensation is ignored, the actual cross over frequency is usually lower than
the cross over frequency used in the calculations. Use SwitcherPro software for a more accurate design.
24
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First, the modulator pole, fpmod, and the esr zero, fzmod must be calculated using Equation 30 and Equation 31.
For Cout, use a derated value of 22.4 µf. use Equation 32 and Equation 33 to estimate a starting point for the
closed loop crossover frequency fco. Then the required compensation components may be derived. For this
design example, fpmod is 12.9 kHz and fzmod is 2730 kHz. Equation 32 is the geometric mean of the modulator
pole and the esr zero and Equation 33 is the geometric mean of the modulator pole and one half the switching
frequency. Use a frequency near the lower of these two values as the intended crossover frequency fco. In this
case Equation 32 yields 175 kHz and Equation 33 yields 55.7 kHz. The lower value is 55.7 kHz. A slightly higher
frequency of 60.5 kHz is chosen as the intended crossover frequency.
Iout
f pmod =
2 × p × Vout × Cout
(30)
f zm od =
1
2 × p × RESR × Cout
f co =
f pmod × f zmod
f co =
f pmod ×
(31)
(32)
f sw
2
(33)
Now the compensation components can be calculated.First claculate the value for R2 which sets the gain of the
compensated network at the crossover frequency. Use Equation 34 to determine the value of R2.
2p × f c × Vout × Cout
R2 =
Gm × Vref × VIgm
(34)
Next calcutlate the value of C3. Together with R2, C3 places a compensation sero at the modulator pole
frequency. Equation 35 to determine the value of C3.
Vout × Cout
C3 =
Iout × R2
(35)
Using Equation 34 and Equation 35 the standard values for R2 and C3 are 1.69 kΩ and 8200 pF.
An additional high frequency pole can be used if necessary by adding a capcitor in parallel with the series
combination of R2 and C3. The pole frequency is given by Equation 36. This pole is not used in this design.
1
fp =
2 × p × R2 × Cp
(36)
Application Curves
LOAD TRANSIENT
STARTUP with VIN
Vin = 10 V / div
Vout = 50 mV / div (ac coupled)
EN = 2 V / div
Iout = 2A / div (1.5 A to 4.5 load step)
SS/TR = 1 V / div
Vout = 2 V / div
Time = 500 μsec / div
Time = 2 msec / div
Figure 35.
Figure 36.
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STARTUP with EN
STARTUP with PRE-BIAS
Vin = 5 V / div
Vin = 10 V / div
EN = 2 V / div
Vout = 2 V / div
SS/TR = 1 V / div
Vout starting from pre-bias voltage
Vout = 2 V / div
Time = 2 msec / div
Time = 20 msec / div
Figure 37.
Figure 38.
SHUTDOWN with VIN
SHUTDOWN with EN
Vin = 10 V / div
Vin = 10 V / div
EN = 2 V / div
EN = 2 V / div
SS/TR = 1 V / div
SS/TR = 1 V / div
Vout = 2 V / div
Vout = 2 V / div
Time = 2 msec / div
Time = 2 msec / div
Figure 39.
Figure 40.
OUTPUT VOLTAGE RIPPLE with NO LOAD
OUTPUT VOLTAGE RIPPLE with FULL LOAD
Vout = 10 mV / div (ac coupled)
Vout = 10 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 1 μsec / div
Time = 1 μsec / div
Figure 41.
26
Figure 42.
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INPUT VOLTAGE RIPPLE with NO LOAD
INPUT VOLTAGE RIPPLE with FULL LOAD
Vin = 200 mV / div (ac coupled)
Vin = 200 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 1 μsec / div
Time = 1 μsec / div
Figure 43.
Figure 44.
CLOSED LOOP RESPONSE
LINE REGULATION
0.05
180
60
150
50
40
0.04
120
Phase
0.03
Gain - dB
Gain
10
30
0
0
-30
-10
-60
-20
-30
-90
-40
-120
-50
-150
-60
-180
Percent Regulation - %
60
20
Phase - Deg
90
30
0.02
0.01
0
Io = 3A
Io = 0A
-0.01
-0.02
-0.03
Io = 6A
-0.04
1000000
100000
10000
1000
100
10
Frequency - Hz
-0.05
8
9
10
11
12
13
14
15
16
17
Input Voltage - V
Figure 45.
Figure 46.
LOAD REGULATION
TRACKING PERFORMANCE
10
0.05
10
Vin = 12 V
Vout
0.04
1
1
0.02
0.01
0
-0.01
0.1
0.1
Ideal Vsense
Vsense
0.01
0.01
0.001
0.001
0.0001
0.0001
Vsense Voltage - V
Output Voltage - V
Percent Regulation - %
0.03
-0.02
-0.03
-0.04
0.00001
0.001
-0.05
0
1
2
3
4
5
Output Current - A
6
7
8
Figure 47.
0.00001
0.01
0.1
1
10
Track In Voltage - V
Figure 48.
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TPS54620
SLVS949 – MAY 2009 ........................................................................................................................................................................................................ www.ti.com
MAXIMUM AMBIENT TEMPERATURE
vs
LOAD CURRENT
150
TA - Maximum Ambient Temperature - °C
150
TA - Maximum Ambient Temperature - °C
MAXIMUM AMBIENT TEMPERATURE
vs
IC POWER DISSIPATION
125
125
100
100
75
VIN = 12 V,
VOUT = 3.3 V,
Fsw = 480 kHz,
room temp, no air flow
50
75
50
25
25
0
1
2
3
4
Load Current - A
5
6
0
0.5
1
1.5
2 2.5
3
3.5
PD - IC Power Dissipation - W
Figure 49.
Figure 50.
JUNCTION TEMPERATURE
vs
IC POWER DISSIPATION
EFFICIENCY
vs
LOAD CURRENT
150
4
100
TA = room temperature,
no air flow
95
125
90
85
Efficiency - %
TJ - Junction Temperature - °C
Tjmax = 150 °C,
no air flow
100
75
80
VOUT = 5 V
75
VOUT = 3.3 V
70
VOUT = 1.8 V
65
VOUT = 1.2 V
50
60
VIN = 12 V
Fsw = 500 kHz
55
25
VOUT = 0.8 V
50
0
0.5
1
1.5
2
2.5
3
3.5
Pic - IC Power Dissipation - W
4
Figure 51.
0
1
3
2
4
Load Current - A
5
6
Figure 52.
Thermal Performance
Figure 53. Thermal Signature of TPS54620EVM-374 Operating at
VIN=12V,VOUT=3.3V/6A, TA = Room Temperature
28
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Fast Transient Considerations
In applications where fast transinet responses are very important, the application circuit in Figure 34 can be
modified as shown in Figure 54 which is a customized reference design (PMP4854-2, REV.B).
The frequency responses of Figure 54 is shown in Figure 55. The crossover frequency is pushed much higher to
118kHz and the phase margin is about 57Deg.
Figure 54. 3.3V Output Power Supply Design (PMP4854-2) with Fast Transients
Figure 55. Closed Loop Response for PMP4854-2
PCB Layout Guidelines
Layout is a critical portion of good power supply design. See Figure 56 for a PCB layout example. The top layer
contains the main power traces for VIN, VOUT, and VPHASE. Also on the top layer are connections for the
remaining pins of the TPS54620 and a large top side area filled with ground. The top layer ground area sould be
connected to the internal ground layer(s) using vias at the input bypass capacitor, the output filter cpacitor and
directly under the TPS54620 device to provide a thermal path from the PowerPAD™ land to ground. The GND
pin should be tied directly to the power pad under the IC and the power pad. For operation at full rated load, the
top side ground area together with the internal ground plane, must provide adequate heat dissipating area. There
are several signals paths that conduct fast changing currents or voltages that can interact with stray inductance
or parasitic capacitance to generate noise or degrade the power supplies performance. To help eliminate these
problems, the PVIN pin should be bypassed to ground with a low ESR ceramic bypass capacitor with X5R or
X7R dielectric. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the
PVIN pins, and the ground connections. The VIN pin must also be bypassed to ground using a low ESR ceramic
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TPS54620
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capacitor with X5R or X7R dielectric. Make sure to connect this capacitor to the quite analog ground trace rather
than the power ground trace of the PVIn bypass capacitor. Since the PH connection is the switching node, the
output inductor should be located close to the PH pins, and the area of the PCB conductor minimized to prevent
excessive capacitive coupling.The output filter capacitor ground should use the same power ground trace as the
PVIN input bypass capacitor. Try to minimize this conductor length while maintaining adequate width. The small
signal components should be grounded to the analog ground path as shown. The RT/CLK pin is sensitive to
noise so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of
trace. The additional external components can be placed approximately as shown. It may be possible to obtain
acceptable performance with alternate PCB layouts, however this layout has been shown to produce good
results and is meant as a guideline.
30
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TOPSIDE
GROUND
AREA
FREQUENCY SET RESISTOR
PVIN
INPUT
BYPASS
CAPACITOR
PWRGD
RT/CLK
GND
GND
OUTPUT
FILTER
CAPACITOR
BOOT
CAPACITOR
BOOT
EXPOSED
POWERPAD
AREA
PH
PVIN
PH
PVIN
EN
VIN
SS/TR
V_SNS
PVIN
OUTPUT
INDUCTOR
VOUT
PH
COMP
VIN
SLOW START
CAPACITOR
UVLO SET
RESISTORS
VIN
INPUT
BYPASS
CAPACITOR
FEEDBACK
RESISTORS
COMPENSATION
NETWORK
ANALOG GROUND TRACE
VIA to Ground Plane
Etch Under Component
Figure 56. PCB Layout
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Figure 57. Ultra-Small PCB layout Using TPS54620 (PMP4854-2)
Estimated Circuit Area
The estimated printed circuit board area for the components used in the design of Figure 34 is 0.58. in2 (374
mm2). This area does not include test points or connectors.
The board area can be further reduced if size is a big concern in an application. Figure 57 shows the printed
circuit board layout for PMP4854-2 as shown in Figure 54 whose board area is as small as 17.27 mm x 11.30
mm.
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PACKAGE OPTION ADDENDUM
www.ti.com
2-Jun-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS54620RGYR
ACTIVE
QFN
RGY
14
1000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS54620RGYT
ACTIVE
QFN
RGY
14
250
CU NIPDAU
Level-2-260C-1 YEAR
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jul-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS54620RGYR
QFN
RGY
14
1000
180.0
12.4
3.85
3.85
1.35
8.0
12.0
Q1
TPS54620RGYT
QFN
RGY
14
250
180.0
12.4
3.85
3.85
1.35
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jul-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS54620RGYR
QFN
RGY
14
1000
190.5
212.7
31.8
TPS54620RGYT
QFN
RGY
14
250
190.5
212.7
31.8
Pack Materials-Page 2
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