FUJI 6MBP75RA120

6MBP75RA120
1200V / 75A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
900
1000
800
1200
75
150
75
500
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
Condtion
VCE=1200V input terminal open
Ic=75A
-Ic=75A
Min.
Typ.
–
–
–
–
–
–
Max.
Unit
1.0
2.6
3.0
mA
V
V
6MBP75RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IGBT
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C
Fig.3
Min.
Typ.
Max.
3
18
10
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
110
125
20
150
20
113
10
11.0
12.5
0.2
1.5
2
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=75A, VDC=600V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=75A, VDC=600V
3.6
0.4
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.25
0.73
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP75RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP75RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
In pu t sig na l thre sh old vo lta ge
vs. Po wer su p p ly voltag e
P o w e r su p p ly cu rre n t vs. S w itch in g fre q u e n cy
Tj= 1 0 0 °C
50
2.5
V cc= 1 7V
N -sid e
40
V cc= 1 5V
V cc= 1 3V
30
20
V cc= 1 7V
2
: V in (on ),V in(o ff) (V )
In pu t s ign a l th res ho ld vo lta ge
P o w e r s u p ply c urre n t : Ic c (m A )
P -sid e
} V in(o ff)
1.5
} V in(o n)
1
V cc= 1 5V
10
0.5
V cc= 1 3V
0
0
5
10
15
20
0
25
12
13
S w itc hing fre qu e nc y : fs w (k H z)
14
15
16
17
18
P ow e r s up p ly v oltag e : V cc (V )
U n d e r vo lta g e h ysteris is vs. Jnc tio n te m p e ra tu re
U n d e r vo lta g e vs . J u n c tio n te m p e ra tu re
1
U n d e r v o lta ge h y s te ris is : V H (V )
14
12
U n d e r vo lta g e : V U V T (V )
Tj= 2 5°C
Tj=1 25 °C
10
8
6
4
0.8
0.6
0.4
0.2
2
0
20
40
60
80
100
120
60
80
10 0
A la rm h o ld tim e vs. P o we r su p p ly volta g e
O ve r h e a tin g ch a ra c te ris tics
T cO H ,TjO H ,T c H ,T jH vs . V c c
O ve r h e ating p ro te c tion : T cO H ,T jO H (°C )
O H hy st eris is : T cH ,T jH (°C )
A larm h o ld tim e : tA L M (m S e c )
40
J u n c tio n te m p era tu re : T j (°C )
2.5
T j=12 5°C
2
T j=2 5°C
1.5
1
0.5
12
20
J u n ctio n te m p era tu re : T j (°C )
3
0
0
140
13
14
15
16
P ow e r s up p ly v oltag e : V c c (V )
17
18
12 0
14 0
17
18
200
TjO H
150
TcO H
100
50
TcH ,T jH
0
12
13
14
15
16
P ow e r s up p ly voltag e : V c c (V )
6MBP75RA120
IGBT-IPM
Inverter
C ollec tor cu rrent vs. C ollecto r-E m itte r vo ltag e
Tj=1 2 5°C
C o lle c to r cu rre n t vs . C o lle c to r-E m itte r vo lta g e
Tj= 2 5 °C
V cc= 15V
12 0
V cc= 15V
12 0
V cc= 17V
V cc= 17V
10 0
C ollec to r C u rre nt : Ic (A )
C ollec to r C u rre nt : Ic (A )
10 0
V cc= 13V
80
60
40
20
0
V cc= 13V
80
60
40
20
0
0.5
1
1.5
2
2.5
0
3
0
2
S w itc hin g tim e : ton ,to ff,tf (n S e c)
to ff
to n
1 00 0
2.5
3
tf
100
to ff
to n
100 0
tf
10 0
0
20
40
60
80
100
120
0
20
C o lle c to r cu rre n t : Ic (A )
40
60
80
10 0
12 0
C o lle c tor cu rre nt : Ic (A )
R everse rec overy charac teristics
trr,Irr vs . IF
F orw ard curre nt vs . F orw ard v oltag e
12 0
1000
125 °C
25 °C
10 0
R ev e rse reco v ery cu rre nt : Irr(A )
R e ve rse reco v ery tim e : trr(n S e c)
S w itc h in g tim e : ton ,to ff,tf (n S e c )
1.5
1 000 0
1 0 00 0
F orw ard C urrent : If (A )
1
S w itc hing tim e vs . C ollecto r c urrent
E dc = 6 0 0 V ,V cc= 1 5 V ,Tj= 1 2 5 °C
S w itc h in g tim e vs . C o lle cto r c u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,Tj= 2 5 °C
10
0.5
C olle c to r-E m itte r v o lta g e : V ce (V )
C olle c to r-E m itte r v o lta g e : V ce (V )
80
60
trr125°C
trr25°C
100
40
20
Irr125°C
Irr25°C
0
0
0.5
1
1.5
2
F orw ard v oltage : Vf (V )
2.5
3
10
0
20
40
60
80
F o rward curre nt : IF (A )
100
120
6MBP75RA120
IGBT-IPM
R e ve rs e d b ia s e d s a fe o p e ra tin g a re a
V c c = 1 5 V , Tj <= 1 2 5 °C
T ra n s ie n t th e rm a l re s is ta n c e
T h erm a l re s is ta n c e : R th (j-c ) (°C /W )
1
105 0
FW D
C o lle c tor c u rre nt : Ic (A )
90 0
IG B T
0.1
75 0
60 0
SCSOA
(n o n -re p e titiv e p u ls e )
45 0
30 0
15 0
RBSOA
(R e p etitiv e p uls e )
0
0 .0 1
0.00 1
0 .0 1
0.1
1
0
20 0
60 0
80 0
100 0
120 0
140 0
P o w e r d e ra tin g fo r F W D
(p e r d e v ic e )
P o w e r d era tin g fo r IG B T
(p e r d ev ice)
20 0
C o lle c te r P o w er D is s ip ation : P c (W )
60 0
C o lle cte r P o w e r D iss ip ation : P c (W )
40 0
C o lle cto r-E m itte r v o lta g e : V c e (V )
P u ls e w idt h :P w (s e c )
50 0
40 0
30 0
20 0
10 0
17 5
15 0
12 5
10 0
75
50
25
0
0
20
40
60
80
10 0
12 0
14 0
0
16 0
0
20
40
35
35
30
30
25
20
Eon
15
Eoff
10
5
E rr
20
40
60
80
C o lle ctor cu rre nt : Ic (A )
80
10 0
12 0
14 0
16 0
S w itching Los s vs. C o llec tor C urrent
E dc =60 0V ,V c c= 15V ,T j=125 °C
S w itch ing lo s s : E o n ,E o ff,E rr (m J /cycle)
S w itch in g lo ss : E o n,Eo ff,E rr (m J/cyc le)
S w itch ing L o s s vs. C o lle c tor C u rre n t
E d c =6 0 0 V ,V cc= 1 5V ,Tj= 25 °C
0
0
60
C a s e T e m p era ture : T c (°C )
C a se T e m p era ture : T c (°C )
100
120
E on
25
20
15
E o ff
10
E rr
5
0
0
20
40
60
80
C ollecto r cu rre n t : Ic (A )
10 0
12 0
6MBP75RA120
IGBT-IPM
O ver current pro te ction vs. Ju nction tem p erature
Vcc=1 5 V
O ve r cu rre nt protec tion leve l : Io c(A )
3 00
2 50
2 00
1 50
1 00
50
0
0
20
40
60
80
1 00
Ju n ctio n te m p era tu re : T j(°C )
1 20
1 40