6MBP200RA060 600V / 200A 6 in one-package IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current VDC VDC(surge) VSC VCES DC IC 1ms ICP Duty=57.8% -IC Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 450 500 400 600 200 400 200 735 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF Condition VCE=600V input terminal open Ic=200A -Ic=200A Min. – – – Typ. – – – Max. 1.0 2.8 3.0 Unit mA V V 6MBP200RA060 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100°C *7 6 32 fsw=0 to 15kHz Tc=-20 to 100°C *7 18 96 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125°C 300 Tj=25°C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25°C Fig.3 12 1425 1500 1575 Unit mA mA V V V °C °C °C °C A µs V V ms µs ohm Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=200A, VDC=300V Typ. Max. Unit - - µs µs µs 0.3 - IF=200A, VDC=300V 3.6 0.4 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.17 0.36 - Unit °C/W °C/W °C/W Typ. 15 - Max. 400 16.5 20 3.0 3.0 Unit V V V N·m N·m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 6MBP200RA060 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 6MBP200RA060 IGBT-IPM Characteristics (Representative) Control circuit Input signal threshold voltage vs. Power supply voltage Power supply current vs. Switching frequency Tj=100°C 3 Vcc=17V P-side N-side 70 Vcc=15V 60 Vcc=13V 50 40 30 Vcc=17V Vcc=15V 20 Input signal threshold voltage : Vin(on),Vin(off) (V) Power supply current : Icc (mA) 80 Tj=25°C Tj=125°C Vcc=13V 10 2.5 } Vin(off) 2 1.5 } Vin(on) 1 0.5 0 0 0 5 10 15 20 Switching frequency : fsw (kHz) 12 25 Under voltage vs. Junction temperature 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage hysterisis vs. Jnction temperature 14 1 Under voltage hysterisis : VH (V) Under voltage : VUVT (V) 12 10 8 6 4 0.8 0.6 0.4 0.2 2 0 0 20 40 60 80 100 120 Junction temperature : Tj (°C) 20 140 40 140 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Alarm hold time vs. Power supply voltage 3 200 2.5 Tj=125°C 2 Tj=25°C 1.5 1 0.5 0 TjOH OH hysterisis : TcH,TjH (°C) Over heating protection : TcOH,TjOH (°C) Alarm hold time : tALM (mSec) 60 80 100 120 Junction temperature : Tj (°C) 150 TcOH 100 50 TcH,TjH 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP200RA060 IGBT-IPM Inverter C o lle cto r c u rren t v s. C o lle cto r-Em itter vo lta ge Tj= 2 5°C Collector current vs. Collector-Emitter voltage Tj=125°C Vcc=15V 350 3 50 V c c= 1 5V V c c= 1 7V Vcc=17V 300 Collector Current : Ic (A) C ollec to r C u rre nt : Ic (A ) 3 00 V c c= 1 3V 2 50 250 Vcc=13V 200 2 00 150 1 50 100 1 00 50 50 0 0 0 0 .5 1 1 .5 2 2 .5 3 3 .5 0 0.5 C o lle cto r-E m itte r vo lta g e : V ce (V ) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C Switching time : ton,toff,tf (nSec) 10000 toff ton 1000 tf 100 toff ton 1000 tf 100 10 10 0 50 100 150 200 250 Collector current : Ic (A) 300 0 350 50 100 150 200 250 Collector current : Ic (A) 300 350 R e v erse rec ov e ry c ha ra c teristics trr,Irr v s. IF Forward current vs. Forward voltage 1000 350 300 125°C 250 25°C 200 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Switching time : ton,toff,tf (nSec) 3.5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125°C 10000 Forward Current : If (A) 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) trr125°C trr25°C 100 150 100 50 Irr125°C Irr25°C 10 0 0 0.5 1 1.5 2 Forward voltage : Vf (V) 2.5 3 0 50 100 150 200 250 Forward current : IF(A) 300 350 6MBP200RA060 IGBT-IPM Reversed biased safe operating area Vcc=15V,Tj < = 125°C Transient thermal resistance Thermal resistance : Rth(j-c) (°C/W) 1 2000 IGBT 0.1 Collector current : Ic (A) 1800 FWD 1600 1400 1200 SCSOA (non-repetitive pulse) 1000 800 600 400 RBSOA (Repetitive pulse) 200 0.01 0 0.001 0.01 0.1 1 0 100 Pulse width :Pw (sec) 400 500 600 700 P o w e r d e ra tin g for F W D (pe r d ev ic e ) 350 Collecter Power Dissipation : Pc (W) 800 Collecter Power Dissipation : Pc (W) 300 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 700 600 500 400 300 200 100 300 250 200 150 100 0 50 0 15 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 Case Temperature : Tc (°C) Case Temperature : Tc (°C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25°C Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=125°C 10 Eon 5 Eoff Err 0 Switching loss : Eon,Eoff,Err (mJ/cycle) 0 Switching loss : Eon,Eoff,Err (mJ/cycle) 200 160 15 Eon 10 Eoff 5 Err 0 0 50 100 150 Collector current : Ic (A) 200 0 50 100 150 Collector current : Ic (A) 200 6MBP200RA060 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V Over current protection level : Ioc(A) 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 Junction temperature : Tj(°C) 120 140