7MBP300RA060 600V / 300A 7 in one-package IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current VDC VDC(surge) VSC VCES VR DC IC 1ms ICP Duty=55.5% -IC Collector power dissipation One transistor PC DB Collector current DC IC 1ms ICP Forward current of Diode IF Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 450 500 400 600 600 300 600 300 1040 100 200 100 400 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V V A A A W A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV DB Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode ICES VCE(sat) VF ICES VCE(sat) VF Condtion VCE=600V input terminal open Ic=300A -Ic=300A VCE=600V input terminal open Ic=100A -Ic=100A Min. Typ. – – – – – – – – – – – – Max. Unit 1.0 2.8 3.0 1.0 2.8 3.0 mA V V mA V V 7MBP300RA060 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM Condition Min. Typ. fsw=0 to 15kHz Tc=-20 to 100°C *7 6 fsw=0 to 15kHz Tc=-20 to 100°C *7 24 ON 1.00 1.35 OFF 1.70 2.05 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 20 surface of IGBT chips 150 20 Tj=125°C 450 Tj=125°C 150 Tj=25°C Fig.2 10 11.0 0.2 1.5 2 Tj=25°C Fig.3 1425 1500 Max. 32 114 1.70 2.40 125 12.5 12 1575 Unit mA mA V V V °C °C °C °C A A µs V V ms µs ohm Typ. Max. Unit - - µs µs µs *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=300A, VDC=300V 0.3 - IF=300A, VDC=300V 3.6 0.4 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV DB IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.25 0.31 - Unit °C/W °C/W °C/W °C/W Typ. 15 - Max. 400 16.5 20 3.0 3.0 Unit V V kHz N·m N·m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 7MBP300RA060 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 7MBP300RA060 IGBT-IPM Characteristics (Representative) Control circuit P ow er su p ply c urre nt vs . S w itc hin g freq ue n cy T j= 10 0°C Input signal threshold voltage vs. Power supply voltage 1 00 2.5 P o w er su p ply c urre n t : Ic c (m A ) V cc= 1 5V 80 V cc= 1 3V 60 40 V cc= 1 7V V cc= 1 5V V cc= 1 3V 20 Input signal threshold voltage : Vin(on),Vin(off) (V) V cc= 1 7V P -side N -side 2 } Vin(off) 1.5 0.5 0 0 5 10 15 20 S witch ing fre qu e nc y : fsw (k H z) 25 12 13 18 Under voltage hysterisis : VH (V) 1 12 10 8 6 4 2 20 40 60 80 100 120 0.8 0.6 0.4 0.2 0 140 20 40 Junction temperature : Tj (°C) 80 100 120 140 17 18 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Over heating protection : TcOH,TjOH (°C) OH hysterisis : TcH,TjH (°C) 3 2.5 Tj=125°C 2 Tj=25°C 1.5 1 0.5 0 12 60 Junction temperature : Tj (°C) Alarm hold time vs. Power supply voltage Alarm hold time : tALM (mSec) 14 15 16 17 Power supply voltage : Vcc (V) Under voltage hysterisis vs. Jnction temperature Under voltage vs. Junction temperature 14 Under voltage : VUVT (V) } Vin(on) 1 0 0 Tj=25°C Tj=125°C 200 TjOH 150 TcOH 100 50 TcH,TjH 0 13 14 15 16 Power supply voltage : Vcc (V) 17 18 12 13 14 15 16 Power supply voltage : Vcc (V) 7MBP300RA060 IGBT-IPM Inverter C o lle cto r c u rren t v s. C o lle cto r-Em itter vo lta ge Tj= 2 5°C 5 00 Collector current vs. Collector-Emitter voltage Tj=125°C 500 V c c= 1 5V Vcc=15V V c c= 1 7V Vcc=17V 400 Collector Current : Ic (A) C ollec to r C u rre nt : Ic (A ) 4 00 V c c= 1 3V Vcc=13V 300 3 00 200 2 00 100 1 00 0 0 0 0 .5 1 1 .5 2 2 .5 3 0 3 .5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C 1 1.5 2 2.5 3 3.5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125°C 10000 10000 Switching time : ton,toff,tf (nSec) Switching time : ton,toff,tf (nSec) 0.5 Collector-Emitter voltage : Vce (V) C o lle cto r-E m itte r vo lta g e : V ce (V ) toff ton 1000 tf 100 toff ton 1000 tf 100 10 10 0 100 200 300 400 Collector current : Ic (A) 500 0 100 200 300 400 Collector current : Ic (A) 500 Reverse recovery characteristics trr,Irr vs. IF Forward current vs. Forward voltage 500 400 Forward Current : If (A) 125°C 25°C 300 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) 1000 trr125°C trr25°C 100 200 100 0 Irr125°C Irr25°C 10 0 0.5 1 1.5 2 Forward voltage : Vf (V) 2.5 3 0 100 200 300 Forward current : IF(A) 400 500 7MBP300RA060 IGBT-IPM Reversed biased safe operating area Vcc=15V,Tj <= 125°C Transient thermal resistance 3000 2700 FWD IGBT 0.1 0.01 Collector current : Ic (A) Thermal resistance : Rth(j-c) (°C/W) 1 2400 2100 1800 SCSOA (non-repetitive pulse) 1500 1200 900 600 RBSOA (Repetitive pulse) 300 0.001 0 0.001 0.01 0.1 1 0 100 Pulse width :Pw (sec) 400 500 600 700 Power derating for FWD (per device) 600 Collecter Power Dissipation : Pc (W) 1200 1000 800 600 400 200 500 400 300 200 100 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) Case Temperature : Tc (°C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25°C Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=125°C 20 15 10 Eon Eoff 5 Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collecter Power Dissipation : Pc (W) 300 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) Switching loss : Eon,Eoff,Err (mJ/cycle) 200 20 Eon 15 Eoff 10 5 Err 0 0 0 50 100 150 200 Collector current : Ic (A) 250 300 0 50 100 150 200 Collector current : Ic (A) 250 300 7MBP300RA060 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V Over current protection level : Ioc(A) 1200 1000 800 600 400 200 0 0 20 40 60 80 100 Junction temperature : Tj(°C) 120 140 7MBP300RA060 IGBT-IPM Brake C olle cto r curren t vs. C olle cto r-E mitte r vo lta ge T j=25 ° C Collector current vs. Collector-Emitter voltage Tj=125°C Vcc=15V 160 Vcc=15V 160 Vcc=17V Vcc=17V Collector Current : Ic (A) Collector Current : Ic (A) 140 Vcc=13V 120 100 80 60 40 140 Vcc=13V 120 100 80 60 40 20 20 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 1.5 2 2.5 3 3.5 Reversed biased safe operating area Vcc=15V,Tj <= 125°C T ra n s ie n t th e rm a l re sista n ce 1000 1 900 800 Collector current : Ic (A) IGBT 0.1 700 600 SCSOA (non-repetitive pulse) 500 400 300 200 RBSOA (Repetitive pulse) 100 0 0.01 0.001 0.01 0.1 0 1 100 200 300 400 500 600 700 Collector-Emitter voltage : Vce (V) Pulse w idth :Pw (sec) Power derating for IGBT (per device) Over current protection vs. Junction temperature Vcc=15V 500 Over current protection level : Ioc(A) Collecter Power Dissipation : Pc (W) 1 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Thermal resistance : Rth(j-c) (°C/W) 0.5 400 300 200 100 250 200 150 100 50 0 0 0 20 40 60 80 100 120 Case Temperature : Tc (°C) 140 160 0 20 40 60 80 100 120 Junction temperature : Tj( °C) 140