6MBP300RA060 600V / 300A 6 in one-package IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Symbol DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current VDC VDC(surge) VSC VCES DC IC 1ms ICP Duty=55.5% -IC Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 450 500 400 600 300 600 300 1040 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol I CES V CE(sat) VF Condition V CE =600V input terminal open Ic=300A -Ic=300A Min. – – – Typ. – – – Max. Unit 1.0 2.8 3.0 mA V V 6MBP300RA060 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM ICCN Vin(th) Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100°C *7 6 32 fsw=0 to 15kHz Tc=-20 to 100°C *7 18 96 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125°C 450 Tj=25°C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25°C Fig.3 12 1425 1500 1575 Unit mA mA V V V °C °C °C °C A µs V V ms µs ohm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=300A, VDC=300V Typ. Max. Unit - - µs µs µs 0.3 - IF=300A, VDC=300V 3.6 0.4 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.25 - Unit °C/W °C/W °C/W Typ. 15 - Max. 400 16.5 20 3.0 3.0 Unit V V kHz N·m N·m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 6MBP300RA060 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 6MBP300RA060 IGBT-IPM Characteristics (Representative) Control circuit Power supply current vs. Switching frequency Tj=100°C Input signal threshold voltage vs. Power supply voltage 2.5 Vcc=17V P-side N-side Vcc=15V Vcc=13V 60 40 Vcc=17V Vcc=15V Vcc=13V 20 2 : Vin(on),Vin(off) (V) 80 Input signal threshold voltage Power supply current : Icc (mA) 100 } Vin(off) 1.5 } Vin(on) 1 0.5 0 0 0 5 10 15 20 Switching frequency : fsw (kHz) 12 25 13 14 15 16 17 18 Power supply voltage : Vcc (V) Under voltage hysterisis vs. Jnction temperature Under voltage vs. Junction temperature 1 14 Under voltage hysterisis : VH (V) 12 Under voltage : VUVT (V) Tj=25°C Tj=125°C 10 8 6 4 0.8 0.6 0.4 0.2 2 0 20 40 60 80 100 120 0 140 20 40 100 120 140 200 2.5 Tj=125°C 2 Tj=25°C 1.5 1 0.5 12 13 14 15 16 Power supply voltage : Vcc (V) 17 18 TjOH OH hysterisis : TcH,TjH (°C) Over heating protection : TcOH,TjOH (°C) 3 Alarm hold time : tALM (mSec) 80 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Alarm hold time vs. Power supply voltage 0 60 Junction temperature : Tj (°C) Junction temperature : Tj (°C) 150 TcOH 100 50 TcH,TjH 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP300RA060 IGBT-IPM Inverter C o lle cto r c u rren t v s. C o lle cto r-E m itter vo lta ge T j= 12 5°C Collector current vs. Collector-Emitter voltage Tj=25°C 500 5 00 Vcc=15V V cc= 1 5V Vcc=17V V cc= 1 7V 4 00 C ollec to r C u rre nt : Ic (A ) Collector Current : Ic (A) 400 Vcc=13V 300 V cc= 1 3V 3 00 200 2 00 100 1 00 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Collector-Emitter voltage : Vce (V) 1 .5 2 2 .5 3 3 .5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125°C 10000 10000 Switching time : ton,toff,tf (nSec) Switching time : ton,toff,tf (nSec) 1 C o lle cto r-E m itte r v o lta g e : V ce (V ) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C toff ton 1000 tf 100 toff ton 1000 tf 100 10 10 0 100 200 300 400 Collector current : Ic (A) 500 0 100 200 300 400 Collector current : Ic (A) 500 Reverse recovery characteristics trr,Irr vs. IF Forward current vs. Forward voltage 500 125°C 25°C 300 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) 1000 400 Forward Current : If (A) 0 .5 trr125°C trr25°C 100 200 100 Irr125°C Irr25°C 10 0 0 0.5 1 1.5 2 Forward voltage : Vf (V) 2.5 3 0 100 200 300 Forward current : IF(A) 400 500 6MBP300RA060 IGBT-IPM Reversed biased safe operating area Vcc=15V,Tj < =125°C Transient thermal resistance 3000 2700 FWD IGBT 0.1 0.01 Collector current : Ic (A) Thermal resistance : Rth(j-c) (°C/W) 1 2400 2100 1800 SCSOA (non-repetitive pulse) 1500 1200 900 600 RBSOA (Repetitive pulse) 300 0.001 0 0.001 0.01 0.1 1 0 100 Pulse width :Pw (sec) 400 500 600 700 Power derating for FWD (per device) 600 Collecter Power Dissipation : Pc (W) 1200 1000 800 600 400 200 500 400 300 200 100 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) Case Temperature : Tc (°C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25°C S w itch in g L os s v s. C o lle cto r C u rren t E d c =3 00 V ,V cc = 15 V,T j= 12 5°C 20 20 15 10 Eon Eoff 5 Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collecter Power Dissipation : Pc (W) 300 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) Switching loss : Eon,Eoff,Err (mJ/cycle) 200 Eon 15 Eoff 10 5 Err 0 0 0 50 100 150 200 Collector current : Ic (A) 250 300 0 50 100 150 200 Collector current : Ic (A) 250 300 6MBP300RA060 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V Over current protection level : Ioc(A) 1200 1000 800 600 400 200 0 0 20 40 60 80 100 Junction temperature : Tj(°C) 120 140