FUJI 6MBP300RA060

6MBP300RA060
600V / 300A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
VDC
VDC(surge)
VSC
VCES
DC
IC
1ms
ICP
Duty=55.5% -IC
Collector power dissipation One transistor
PC
Junction temperature
Tj
Input voltage of power supply for Pre-Driver
VCC *1
Input signal voltage
Vin *2
Input signal current
Iin
Alarm signal voltage
VALM *3
Alarm signal current
IALM *4
Storage temperature
Tstg
Operating case temperature
Top
Isolating voltage (Case-Terminal)
Viso *5
Screw torque
Mounting (M5)
Terminal (M5)
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
450
500
400
600
300
600
300
1040
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Symbol
I CES
V CE(sat)
VF
Condition
V CE =600V input terminal open
Ic=300A
-Ic=300A
Min.
–
–
–
Typ.
–
–
–
Max.
Unit
1.0
2.8
3.0
mA
V
V
6MBP300RA060
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
ICCN
Vin(th)
Condition
Min.
Typ.
Max.
fsw=0 to 15kHz Tc=-20 to 100°C *7
6
32
fsw=0 to 15kHz Tc=-20 to 100°C *7
18
96
ON
1.00
1.35
1.70
OFF
1.70
2.05
2.40
Rin=20k ohm
8.0
VDC=0V, Ic=0A, Case temperature, Fig.1 110
125
20
surface of IGBT chips
150
20
Tj=125°C
450
Tj=25°C Fig.2
10
11.0
12.5
0.2
1.5
2
Tj=25°C Fig.3
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=300A, VDC=300V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=300A, VDC=300V
3.6
0.4
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.12
0.25
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
400
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP300RA060
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 920g
6MBP300RA060
IGBT-IPM
Characteristics (Representative)
Control circuit
Power supply current vs. Switching frequency
Tj=100°C
Input signal threshold voltage
vs. Power supply voltage
2.5
Vcc=17V
P-side
N-side
Vcc=15V
Vcc=13V
60
40
Vcc=17V
Vcc=15V
Vcc=13V
20
2
: Vin(on),Vin(off) (V)
80
Input signal threshold voltage
Power supply current : Icc (mA)
100
} Vin(off)
1.5
} Vin(on)
1
0.5
0
0
0
5
10
15
20
Switching frequency : fsw (kHz)
12
25
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Under voltage hysterisis vs. Jnction temperature
Under voltage vs. Junction temperature
1
14
Under voltage hysterisis : VH (V)
12
Under voltage : VUVT (V)
Tj=25°C
Tj=125°C
10
8
6
4
0.8
0.6
0.4
0.2
2
0
20
40
60
80
100
120
0
140
20
40
100
120
140
200
2.5
Tj=125°C
2
Tj=25°C
1.5
1
0.5
12
13
14
15
16
Power supply voltage : Vcc (V)
17
18
TjOH
OH hysterisis : TcH,TjH (°C)
Over heating protection : TcOH,TjOH (°C)
3
Alarm hold time : tALM (mSec)
80
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Alarm hold time vs. Power supply voltage
0
60
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
150
TcOH
100
50
TcH,TjH
0
12
13
14
15
16
17
Power supply voltage : Vcc (V)
18
6MBP300RA060
IGBT-IPM
Inverter
C o lle cto r c u rren t v s. C o lle cto r-E m itter vo lta ge
T j= 12 5°C
Collector current vs. Collector-Emitter voltage
Tj=25°C
500
5 00
Vcc=15V
V cc= 1 5V
Vcc=17V
V cc= 1 7V
4 00
C ollec to r C u rre nt : Ic (A )
Collector Current : Ic (A)
400
Vcc=13V
300
V cc= 1 3V
3 00
200
2 00
100
1 00
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
Collector-Emitter voltage : Vce (V)
1 .5
2
2 .5
3
3 .5
Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=125°C
10000
10000
Switching time : ton,toff,tf (nSec)
Switching time : ton,toff,tf (nSec)
1
C o lle cto r-E m itte r v o lta g e : V ce (V )
Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=25°C
toff
ton
1000
tf
100
toff
ton
1000
tf
100
10
10
0
100
200
300
400
Collector current : Ic (A)
500
0
100
200
300
400
Collector current : Ic (A)
500
Reverse recovery characteristics
trr,Irr vs. IF
Forward current vs. Forward voltage
500
125°C
25°C
300
Reverse recovery current : Irr(A)
Reverse recovery time : trr(nSec)
1000
400
Forward Current : If (A)
0 .5
trr125°C
trr25°C
100
200
100
Irr125°C
Irr25°C
10
0
0
0.5
1
1.5
2
Forward voltage : Vf (V)
2.5
3
0
100
200
300
Forward current : IF(A)
400
500
6MBP300RA060
IGBT-IPM
Reversed biased safe operating area
Vcc=15V,Tj <
=125°C
Transient thermal resistance
3000
2700
FWD
IGBT
0.1
0.01
Collector current : Ic (A)
Thermal resistance : Rth(j-c) (°C/W)
1
2400
2100
1800
SCSOA
(non-repetitive pulse)
1500
1200
900
600
RBSOA
(Repetitive pulse)
300
0.001
0
0.001
0.01
0.1
1
0
100
Pulse width :Pw (sec)
400
500
600
700
Power derating for FWD
(per device)
600
Collecter Power Dissipation : Pc (W)
1200
1000
800
600
400
200
500
400
300
200
100
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case Temperature : Tc (°C)
Case Temperature : Tc (°C)
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=25°C
S w itch in g L os s v s. C o lle cto r C u rren t
E d c =3 00 V ,V cc = 15 V,T j= 12 5°C
20
20
15
10
Eon
Eoff
5
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collecter Power Dissipation : Pc (W)
300
Collector-Emitter voltage : Vce (V)
Power derating for IGBT
(per device)
Switching loss : Eon,Eoff,Err (mJ/cycle)
200
Eon
15
Eoff
10
5
Err
0
0
0
50
100
150
200
Collector current : Ic (A)
250
300
0
50
100
150
200
Collector current : Ic (A)
250
300
6MBP300RA060
IGBT-IPM
Over current protection vs. Junction temperature
Vcc=15V
Over current protection level : Ioc(A)
1200
1000
800
600
400
200
0
0
20
40
60
80
100
Junction temperature : Tj(°C)
120
140