7MBP 50RA-120 IGBT IPM 1200V 6x50A+Chopper Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode Collector Power Dissi. DB One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 50 100 50 400 25 50 25 198 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV DB Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=50A -IC=50A VCE=1200V, Input Terminal Open IC=25A -IC=25A Min. Typ. Max. 1.0 2.6 3.0 1.0 2.6 3.3 Units mA V V mA V V Min. 3 10 1.00 1.25 Typ. Max. 18 65 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Symbols ICCP ICCN Input Signal Threshold Voltage VIN(th) Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 1.60 8.0 110 150 Tj=125°C Tj=125°C Tj=25°C 75 38 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 A 10 2 1500 1575 12.5 µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=600V IF=50A, VDC=600V Min. 0.3 Typ. Max. Units 3.6 0.4 µs 7MBP 50RA-120 IGBT IPM 1200V 6x50A+Chopper • Thermal Characteristics Items Thermal Resistance n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 Max. 0.31 0.70 0.63 Units °C/W IGBT IPM 1200V 6x50A+Chopper 7MBP 50RA-120 n Dynamic Brake C o llector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C V C C =17V,15V, 13V Collector Current : I Collector Current : I V C C =17V,15V, 13V 40 C [A] 40 T j= 1 2 5 ° C 50 C [A] 50 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 Collector-Emitter Voltage : V C E [V] 30 20 10 0 0,0 3,0 0,5 0 2,0 2,5 3,0 V C C =15V, T j<125°C 350 [°C/W] 1,5 Reverse Biased Safe Operating Area Transient Thermal Resistance 10 1,0 C o llector-Em itter Voltage : V C E [V] 300 SCSOA (non-repetitive pulse) 250 10 10 Collector Current : I Thermal Resistance : R C [A] th(j-c) IGBT -1 -2 10 10 -2 10 -1 10 100 RBSOA (repetitive pulse) 50 0 0 200 400 600 800 1000 1200 1400 Pulse Width : P W [sec] Collector-Emitter Voltage : V C E [V] Power Derating For IGBT Over Current Protection vs. Junction Temperature (per device) V cc =15 V 120 oc [A] [W] 200 Over Current Protection Level : I C 150 0 -3 250 Collector Power Dissipation : P 200 150 100 50 0 0 20 40 60 80 100 120 Case Temperature : T C [°C] 140 160 100 80 60 40 20 0 0 20 40 60 80 100 Junction Temperature: T j [°C] 120 140 IGBT IPM 1200V 6x50A+Chopper 7MBP 50RA-120 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency 2,5 T j=25°C V CC= 1 7 V 35 V CC= 1 5 V 30 V CC= 1 3 V 25 20 15 V C C= 1 7 V P-Side 10 V C C= 1 5 V V C C= 1 3 V 5 V in(off) 1,5 5 10 15 20 V in(on) 1,0 0,5 0,0 12 0 0 T j=125°C 2,0 : V in(on) , V in(off) [V] N-Side Input Signal Threshold Voltage [mA] CC Power Supply Current : I vs. Power Supply Voltage T j=100°C 40 25 13 S w itching Frequency : fsw [kHz] 14 [V] H Under Voltage Hysterisis : V Under Voltage : V UV [V] 10 8 6 4 2 40 60 80 100 120 Junction Temperature : T j [°C] 0,4 0,2 0,0 20 140 40 60 80 100 120 Junction Temperature: Tj [°C] 140 Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 cH , T jH [°C] 200 Over Heating Protection : T [ms] 18 0,6 3,0 ALM 17 0,8 Alarm Hold Time vs. Power Supply Voltage Alarm Hold Timen : t 16 1,0 12 0,0 12 15 Under Voltage Hysterisis vs. Junction Temperature Under Voltage vs. Junction Temperature 0 20 14 Power Supply Voltage : V cc [V] T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 1200V 6x50A+Chopper 7MBP 50RA-120 n Inverter Collector Current vs. Collector-Emitter Voltage C o llector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 100 V C C =17V,15V, 13V 80 C [A] 80 Collector Current : I C [A] V C C =17V,15V, 13V Collector Current : I T j=125°C 100 60 40 20 60 40 20 0 0 0 1 2 3 0 4 1 Switching Time vs. Collector Current , t r, t off , t f [ns] , t r, t off , t f [ns] t on t off t off t on 1000 Switching Time : t on on Switching Time : t 4 V D C =300V, V C C =15V, T j=125°C 10000 1000 3 Switching Time vs. Collector Current V D C =600V, V C C =15V, T j=25°C 10000 2 Collector-Emitter Voltage : V C E [V] C o llector-Em itter Voltage : V C E [V] 100 tf tf 100 10 10 0 20 40 60 80 0 20 C o llector Current : I C [A] 40 60 80 C o llector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current 80 trr, Irr vs. I F 1000 [A] rr rr 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 Forward Voltage : V F [V] 2,5 3,0 Reverse Recovery Time : t Reverse Recovery Current : I Forward Current : I [ns] 25°C T j=125°C 60 F [A] 70 trr=125°C 100 trr=25°C Irr=125°C Irr=25°C 10 0 10 20 30 40 50 60 Forward Current : I F [A] 70 80 IGBT IPM 1200V 6x50A+Chopper 7MBP 50RA-120 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance V C C =15V, T j<125°C 700 [°C/W] 10 0 600 SCSOA (non-repetitive pulse) 500 Collector Current : I Thermal Resistance : R C [A] th(j-c) FWD IGBT 10 10 -1 400 300 200 100 0 -2 10 RBSOA (repetitive pulse) 0 -3 10 -2 10 -1 10 200 400 800 1000 1200 1400 Collector-Emitter Voltage : V C E [V] Pulse Width : P W [sec] Power Derating For IGBT Power Derating For FWD (per device) (per device) 200 C C [W] [W] 400 600 0 150 Collector Power Dissipation : P Collector Power Dissipation : P 300 200 100 0 0 20 40 60 80 100 120 140 100 50 0 160 0 20 V D C =600V, V C C =15V, T j=25°C , E off , E rr [mJ/cycle] Switching Loss : E Switching Loss : E 10 E off 5 E rr 0 30 40 50 60 Collector Current : I C [A] 120 140 160 70 E on 20 15 on E on on , E off , E rr [mJ/cycle] 15 20 100 V D C =600V, V C C =15V, T j=125°C 25 20 10 80 Switching Loss vs. Collector Current S w itching Loss vs. Collector Current 0 60 Case Temperature : T C (°C) Case Temperature : T C (°C) 25 40 80 E off 10 5 E rr 0 0 10 20 30 40 50 60 70 80 7MBP 50RA-120 IGBT IPM 1200V 6x50A+Chopper n Inverter V cc =15 V 280 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 240 200 160 120 80 40 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 440g Specification is subject to change without notice October 98