FUJI 6MBP100RA120

6MBP100RA120
1200V / 100A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
Collector power dissipation
DC
1ms
DC
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
900
1000
800
1200
100
200
100
735
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
Condtion
VCE=1200V input terminal open
Ic=100A
-Ic=100A
Min.
Typ.
–
–
–
–
–
–
Max.
Unit
1.0
2.6
3.0
mA
V
V
6MBP100RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IGBT
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C
Fig.3
Min.
Typ.
Max.
3
18
10
65
1.00
1.35
1.70
1.70
2.05
2.40
8.0
110
125
20
150
20
150
10
11.0
12.5
0.2
1.5
2
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=100A, VDC=600V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=100A, VDC=600V
3.6
0.4
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.17
0.36
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP100RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 920g
6MBP100RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
In p u t s ig n a l th re s h o ld vo lta g e
vs . P o w e r s u p p ly vo lta g e
P o we r su p p ly cu rre n t vs. S w itc h in g fre q u e n cy
Tj= 1 0 0 °C
2.5
60
V cc= 17V
N -sid e
V cc= 15V
50
V cc= 13V
40
30
V cc= 17V
20
: V in (on ),V in(o ff) (V )
P -sid e
In pu t s ign a l th res ho ld v o lta ge
70
P o we r su p ply c urre n t : Ic c (m A )
Tj= 2 5 °C
Tj= 1 2 5 °C
V cc= 15V
V cc= 13V
2
} V in(o ff)
1.5
} V in(o n)
1
0.5
10
0
0
0
5
10
15
20
12
25
13
S witc hing fre qu e nc y : fsw (k H z)
15
16
17
18
U n d e r vo lta g e h yste ris is vs. Jn c tio n te m p e ra tu re
U n d e r vo lta g e v s. J u nc tio n tem p e ra tu re
1
U n d e r vo lta g e h ys te ris is : V H (V )
14
U nde r v oltag e : VU V T (V)
14
P ow e r s up p ly v oltag e : V cc (V )
12
10
8
6
4
0.8
0.6
0.4
0.2
2
40
60
80
100
120
A la r m h o ld tim e : tA L M (m S e c )
40
60
80
10 0
12 0
J u n c tio n te m p era tu re : T j (°C )
A la rm ho ld tim e v s . P o w e r s u p p ly v o lta g e
O ve r h e a tin g c h a ra c te ris tic s
Tc O H ,T jO H ,T c H ,T jH vs . V c c
2.5
T j= 1 25 ° C
2
T j= 25 °C
1.5
1
0.5
12
20
J u nc tion tem pe rature : T j (°C)
3
0
0
140
13
14
15
16
P o w e r s u p p ly v o lta g e : V c c ( V )
17
18
14 0
20 0
O H hys teris is : T cH ,T jH (°C )
20
O v e r h e ating p ro te c tion : T c O H ,T jO H (°C )
0
T jO H
15 0
TcO H
10 0
50
T c H ,T jH
0
12
13
14
15
16
P ow e r s up p ly v oltag e : V c c (V )
17
18
6MBP100RA120
IGBT-IPM
Inverter
C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e
T j= 1 2 5 °C
C o lle c to r cu rre n t vs. C o lle cto r-E m itte r vo lta g e
Tj= 2 5 °C
V cc = 15V
16 0
Vcc=15V
160
14 0
C o lle c tor C u rre n t : Ic (A )
C ollec to r C u rre nt : Ic (A)
V cc = 17V
V cc = 13V
12 0
10 0
80
60
40
Vcc=17V
140
120
Vcc=13V
100
80
60
40
20
20
0
0
0.5
1
1.5
2
2.5
0
3
0
C olle cto r-Em itte r vo lta g e : Vce (V)
0 .5
S w itc h in g tim e vs . C o lle cto r c u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 °C
1 .5
2
2 .5
3
S w itc h in g tim e vs . C o lle cto r c u rre n t
E d c = 6 0 0 V ,V cc =1 5 V ,T j= 1 2 5 °C
10 0 0 0
S w itch ing tim e : ton ,to ff,tf (n S e c )
10 000
to ff
to n
1 000
tf
1 00
to ff
to n
1 0 00
tf
100
10
10
0
20
40
60
80
1 00 1 20
C o lle cto r cu rre n t : Ic (A )
1 40
0
1 60
20
40
60
80
100 120
C o lle cto r cu rre n t : Ic (A )
140
160
Reverse recovery characteristics
trr,Irr vs. IF
F o rw a rd cu rre n t vs . F o rw a rd vo lta g e
160
2 5 °C
Reverse recovery current : Irr(A)
Reverse recovery time : trr(nSec)
trr125°C
12 5 °C
140
F o rw a rd C u rre n t : If (A )
S w itch in g tim e : to n ,to ff,tf (n S e c )
1
C o lle cto r-E m itter v o lta ge : V c e (V )
100
120
100
80
60
40
trr25°C
Irr125°C
Irr25°C
20
10
0
0
0 .5
1
1 .5
2
Fo rw ard v o ltag e : V f (V )
2 .5
3
0
20
40
60
80 100 120
Forward current : IF(A)
140
160
IGBT-IPM
R e ve rs e d b ia s e d s a fe o p e ra tin g a re a
V cc = 1 5 V ,T j <= 1 2 5 °C
T ran s ien t th e rm a l re s ista n ce
1 400
1
FW D
1 200
C o lle cto r cu rre nt : Ic (A )
T h e rm a l re s is ta n c e : R th (j-c ) (°C /W )
6MBP100RA120
1 000
IG B T
0 .1
8 00
SC SO A
(n on -re pe titiv e p u ls e )
6 00
4 00
2 00
RBSO A
(R e p e titiv e p u ls e )
0
0 .0 1
0 .0 0 1
0 .0 1
0 .1
0
1
2 00
C o lle c te r P o w e r D is s ip a tio n : P c (W )
8 00
8 00
1 000 1 200 1 400
7 00
6 00
5 00
4 00
3 00
2 00
1 00
350
300
250
200
150
100
50
0
0
0
20
40
60
80
1 00
1 20
1 40
1 60
0
20
C a se T e m p e ra tu re : T c (°C )
S w itc h in g L o s s v s . C o lle cto r C u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 °C
40
35
30
25
E on
20
40
60
80
100
120
140
160
C a se T e m p e ra tu re : T c (°C )
15
E o ff
10
E rr
5
S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le )
C o lle c te r P o w e r D is s ip a tio n : P c (W )
6 00
P o w e r d e ra tin g fo r F W D
(p e r d e vice )
P o w e r d e ra tin g fo r IG B T
(p e r d e vice )
S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le )
4 00
C o llec tor-E m itte r v olta g e : V ce (V )
P u lse w id th :P w (s e c )
S w itch in g L o ss vs . C o lle cto r C u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 1 2 5 °C
40
E on
35
30
25
E o ff
20
15
10
E rr
5
0
0
0
20
40
60
80
1 00
1 20
C o llec to r c u rre n t : Ic (A )
1 40
1 60
0
20
40
60
80
100
120
C o lle c to r c u rre n t : Ic (A )
140
160
6MBP100RA120
IGBT-IPM
O ve r c u rre n t p ro te ction le v e l : Io c (A )
O v e r c u rre n t p ro te ctio n v s . Ju n c tio n te m p e ra tu re
V cc = 1 5 V
400
350
300
250
200
150
100
50
0
0
20
40
60
80
100
J u nc tio n tem p eratu re : Tj(°C )
120
140