IGBT IPM 600V 6×300A 6MBP 300RA-060 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=58.8% Collector Power Dissipation One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 300 600 300 1040 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=300A -IC=300A Min. Typ. Max. 1.0 2.8 3.0 Units mA V V Min. 6 24 1.00 1.70 Typ. Max. 32 114 1.70 2.40 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 2.05 8.0 110 150 Tj=125°C Tj=25°C 450 V 125 20 Surface of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 10 2 1500 1575 12.5 A µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=300A, VDC=300V Min. 0.3 Typ. IF=300A, VDC=300V Max. Units 3.6 0.4 µs Max. 0.12 0.25 Units • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. 0.05 °C/W 6MBP 300RA-060 n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection IGBT IPM 600V 6×300A IGBT IPM 600V 6×300A 6MBP 300RA-060 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency 4,0 V C C =17V 90 V C C =13V 70 60 50 40 V C C =17V P-Side 30 V C C =15V 20 V C C =13V V in(off) 2,5 1,5 1,0 0,5 0,0 12 0 5 10 15 20 Switching Frequency : fsw [kHz] 25 [V] H Under Voltage Hysterisis : V UV [V] 10 8 6 4 2 18 40 60 80 100 120 0,4 0,2 0,0 20 140 40 60 80 100 120 140 Junction Temperature: T j [°C] Over Heating Characteristics T cOH, T jOH , T cH , T jH vs. V cc 3,0 , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 , T jH [°C] cH 200 Over Heating Protection : T [ms] 17 0,6 Alarm Hold Time vs. Power Supply Voltage ALM 16 0,8 Junction Temperature : T j [°C] Alarm Hold Timen : t 15 1,0 12 0,0 12 14 Under Voltage Hysterisis vs. Junction Temperature 14 Under Voltage : V 13 Power Supply Voltage : V cc [V] Under Voltage vs. Junction Temperature 0 20 V in(on) 2,0 10 0 T j=125°C 3,0 : V in(on) , V in(off) [V] N-Side 80 T j=25°C 3,5 V C C =15V Input Signal Threshold Voltage [mA] CC Power Supply Current : I vs. Power Supply Voltage T j=100°C 100 T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 600V 6×300A 6MBP 300RA-060 n Inverter Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j=25°C 500 T j=125°C 500 V C C =17V,15V, 13V Collector Current : I Collector Current : I 400 C [A] 400 C [A] V C C =17V,15V, 13V 300 200 100 300 200 100 0 0 1 2 3 Collector-Emitter Voltage : V CE [V] 1 4 V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [ns] Switching Time vs. Collector Current V D C = 3 0 0 V , V C C=15V, T j = 2 5 ° C t on 1000 t off t on on 1000 tf 100 100 200 300 400 tf 100 500 0 100 Collector Current : I C [A] 200 300 400 500 Collector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current 500 t rr, Irr vs. I F 1000 t rr=125°C [A] 300 200 100 Reverse Recovery Time : t Reverse Recovery Current : I F rr rr 400 [ns] 25°C T j=125°C [A] 3 Switching Time vs. Collector Current t off 0 Forward Current : I 2 Collector-Emitter Voltage : V C E [V] Switching Time : t Switching Time : t 0 4 on , t r, t off , t f [ns] 0 trr =25°C 100 I rr=125°C I rr=25°C 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 100 200 300 Forward Current : I F [A] 400 500 IGBT IPM 600V 6×300A 6MBP 300RA-060 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance 10 0 V C C =15V, T j<125°C 3000 SCSOA Thermal Resistance : Rth(j-c) [°C/W] 2700 2400 [A] FWD -1 2100 C 10 (non-repetitive pulse) 10 1800 Collector Current : I IGBT -2 1500 1200 900 600 RBSOA 300 10 -3 (repetitive pulse) 0 10 -3 10 -2 10 -1 10 0 0 100 Pulse Width : P W [sec] , E off , E rr [mJ/cycle] [W] C 1000 900 800 on 700 Switching Loss : E 600 500 400 300 200 100 0 700 E off 35 30 E on 25 20 15 10 5 E rr 20 40 60 80 100 120 140 0 160 50 100 Switching Loss vs. Collector Current 200 250 300 350 400 450 500 Switching Loss vs. Collector Current V D C = 3 0 0 V , V C C = 1 5 V , T j= 2 5 ° C 25 E on E off 15 10 5 E rr 0 , E off , E rr [mJ/cycle] 30 on 35 20 V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C 40 Switching Loss : E 40 150 Collector Current : I C [A] Case Temperature : T C (°C) , E off , E rr [mJ/cycle] 600 0 0 on 500 V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C 40 1100 Switching Loss : E 400 Switching Loss vs. Collector Current (per device) 1200 300 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT Collector Power Dissipation : P 200 E off 35 30 E on 25 20 15 10 5 E rr 0 0 50 100 150 200 250 300 350 Collector Current : I C [A] 400 450 500 0 50 100 150 200 250 300 350 Collector Current : I C [A] 400 450 500 6MBP 300RA-060 IGBT IPM 600V 6×300A n Inverter V cc =15 V 700 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 920g Specification is subject to change without notice October 98