ETC 6MBP300RA-060

IGBT IPM
600V
6×300A
6MBP 300RA-060
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Continuous
Collector
1ms
Current
Duty=58.8%
Collector Power Dissipation One Transistor
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
Screw Torque
( Tc=25°C)
Symbols
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
VCC
VIN
IIN
VALM
IALM
Tj
TOP
Tstg
Viso
Mounting *1
Terminals *1
Ratings
Max.
450
500
400
600
300
600
300
1040
0
20
0
VZ
1
0
VCC
15
150
-20
100
-40
125
2500
3.5
3.5
n Outline Drawing
Units
Min.
0
0
200
0
V
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
INV
Items
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=300A
-IC=300A
Min.
Typ.
Max.
1.0
2.8
3.0
Units
mA
V
V
Min.
6
24
1.00
1.70
Typ.
Max.
32
114
1.70
2.40
Units
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
Symbols
ICCP
ICCN
VIN(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
tALM
RALM
VUV
VH
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
1.35
2.05
8.0
110
150
Tj=125°C
Tj=25°C
450
V
125
20
Surface of IGBT Chip
mA
°C
20
1.5
1425
11.0
0.2
10
2
1500
1575
12.5
A
µs
ms
Ω
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Switching Time
Symbols
tON
tOFF
tRR
Conditions
IC=300A, VDC=300V
Min.
0.3
Typ.
IF=300A, VDC=300V
Max.
Units
3.6
0.4
µs
Max.
0.12
0.25
Units
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
°C/W
6MBP 300RA-060
n Equivalent Circuit
Drivers include following functions
À Short circuit protection circuit
Á Amplifier for driver
 Undervoltage protection circuit
à Overcurrent protection circuit
Ä IGBT Chip overheating protection
IGBT IPM
600V
6×300A
IGBT IPM
600V
6×300A
6MBP 300RA-060
n Control Circuit
Input Signal Threshold Voltage
Power Supply Current vs. Switching Frequency
4,0
V C C =17V
90
V C C =13V
70
60
50
40
V C C =17V
P-Side
30
V C C =15V
20
V C C =13V
V in(off)
2,5
1,5
1,0
0,5
0,0
12
0
5
10
15
20
Switching Frequency : fsw [kHz]
25
[V]
H
Under Voltage Hysterisis : V
UV
[V]
10
8
6
4
2
18
40
60
80
100
120
0,4
0,2
0,0
20
140
40
60
80
100
120
140
Junction Temperature: T j [°C]
Over Heating Characteristics
T cOH, T jOH , T cH , T jH vs. V cc
3,0
, T jOH [°C]
cOH
T j=125°C
2,0
T j=25°C
1,5
1,0
0,5
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
Over Heating Hysterisis : T
2,5
, T jH [°C]
cH
200
Over Heating Protection : T
[ms]
17
0,6
Alarm Hold Time vs. Power Supply Voltage
ALM
16
0,8
Junction Temperature : T j [°C]
Alarm Hold Timen : t
15
1,0
12
0,0
12
14
Under Voltage Hysterisis vs. Junction Temperature
14
Under Voltage : V
13
Power Supply Voltage : V cc [V]
Under Voltage vs. Junction Temperature
0
20
V in(on)
2,0
10
0
T j=125°C
3,0
: V in(on) , V in(off) [V]
N-Side
80
T j=25°C
3,5
V C C =15V
Input Signal Threshold Voltage
[mA]
CC
Power Supply Current : I
vs. Power Supply Voltage
T j=100°C
100
T jOH
150
T cOH
100
50
T cH ,T jH
0
12
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
IGBT IPM
600V
6×300A
6MBP 300RA-060
n Inverter
Collector Current vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
T j=25°C
500
T j=125°C
500
V C C =17V,15V, 13V
Collector Current : I
Collector Current : I
400
C
[A]
400
C
[A]
V C C =17V,15V, 13V
300
200
100
300
200
100
0
0
1
2
3
Collector-Emitter Voltage : V CE [V]
1
4
V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [ns]
Switching Time vs. Collector Current
V D C = 3 0 0 V , V C C=15V, T j = 2 5 ° C
t on
1000
t off
t on
on
1000
tf
100
100
200
300
400
tf
100
500
0
100
Collector Current : I C [A]
200
300
400
500
Collector Current : I C [A]
Reverse Recovery Characteristics
Forward Voltage vs. Forward Current
500
t rr, Irr vs. I F
1000
t rr=125°C
[A]
300
200
100
Reverse Recovery Time : t
Reverse Recovery Current : I
F
rr
rr
400
[ns]
25°C
T j=125°C
[A]
3
Switching Time vs. Collector Current
t off
0
Forward Current : I
2
Collector-Emitter Voltage : V C E [V]
Switching Time : t
Switching Time : t
0
4
on
, t r, t off , t f [ns]
0
trr =25°C
100
I rr=125°C
I rr=25°C
10
0
0
1
2
Forward Voltage : V F [V]
3
4
0
100
200
300
Forward Current : I F [A]
400
500
IGBT IPM
600V
6×300A
6MBP 300RA-060
n Inverter
Reverse Biased Safe Operating Area
Transient Thermal Resistance
10
0
V C C =15V, T j<125°C
3000
SCSOA
Thermal Resistance : Rth(j-c) [°C/W]
2700
2400
[A]
FWD
-1
2100
C
10
(non-repetitive pulse)
10
1800
Collector Current : I
IGBT
-2
1500
1200
900
600
RBSOA
300
10
-3
(repetitive pulse)
0
10
-3
10
-2
10
-1
10
0
0
100
Pulse Width : P W [sec]
, E off , E rr [mJ/cycle]
[W]
C
1000
900
800
on
700
Switching Loss : E
600
500
400
300
200
100
0
700
E off
35
30
E on
25
20
15
10
5
E rr
20
40
60
80
100
120
140
0
160
50
100
Switching Loss vs. Collector Current
200
250
300
350
400
450
500
Switching Loss vs. Collector Current
V D C = 3 0 0 V , V C C = 1 5 V , T j= 2 5 ° C
25
E on
E off
15
10
5
E rr
0
, E off , E rr [mJ/cycle]
30
on
35
20
V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C
40
Switching Loss : E
40
150
Collector Current : I C [A]
Case Temperature : T C (°C)
, E off , E rr [mJ/cycle]
600
0
0
on
500
V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C
40
1100
Switching Loss : E
400
Switching Loss vs. Collector Current
(per device)
1200
300
Collector-Emitter Voltage : V CE [V]
Power Derating For IGBT
Collector Power Dissipation : P
200
E off
35
30
E on
25
20
15
10
5
E rr
0
0
50
100
150
200
250
300
350
Collector Current : I C [A]
400
450
500
0
50
100
150
200
250
300
350
Collector Current : I C [A]
400
450
500
6MBP 300RA-060
IGBT IPM
600V
6×300A
n Inverter
V cc =15 V
700
oc
[A]
Over Current Protection vs. Junction Temperature
Over Current Protection Level : I
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
Junction Temperature: T j [°C]
n Outline Drawing
Weight: 920g
Specification is subject to change without notice
October 98