IGBT IPM 600V 6×30A 6MBP 30RH-060 Intelligent Power Module ( RH-Series ) n Outline Drawing n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items ( Tc=25°C) Symbols DC Bus Voltage VDC DC Bus Voltage (surge) VDC(Surge) DC Bus Voltage (short operating) VSC Collector-Emitter Voltage VCES Inverter Continuous IC Collector 1ms ICP Current Duty=56.6% -IC Collector Power Dissipation One Transistor PC Voltage of Power Supply for Driver VCC Input Signal Voltage VIN Input Signal Current IIN Alarm Signal Voltage VALM Alarm Signal Current IALM Junction Temperature TJ Operating Temperature TOP Storage Temperature Tstg Isolation Voltage A.C. 1min. Viso Screw Torque Mounting (M4) Ratings Max. 450 500 400 0 600 30 60 30 85 -0.3 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 2.0 Units Min. 0 0 V A W V mA V mA °C V Nm • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=30A -IC=30A Min. Typ. Max. 1.0 2.7 3.5 Units mA V V Min. Typ. 2.0 4.0 1.35 1.60 8.0 Max. 5.0 10.0 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Symbols ICCP ICCN Input Signal Threshold Voltage VIN(th) Input Zener Voltage IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Over Current Detecting Resistance Value Under Voltage Protection Level Hysteresis VZ TjOH TjH IOC tDOC tALM ROC VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ Surface Of IGBT Chip N-Side, (N1-N2 open) Tj=25°C 1.00 1.25 150 44 1.0 20 54 5.0 2.0 3.7 11.0 0.2 mA V °C 64 7.0 12.5 0.8 A µs ms mΩ V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=30A, VDC=300V Min. 0.5 Typ. IF=30A, VDC=300V Max. Units 3.5 0.5 µs Max. 1.47 2.10 Units • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. 0.05 °C/W 6MBP 30RH-060 n Equivalent Circuit Drivers include following functions À Over-current protection circuit Á Amplifier for driver  Under-voltage protection circuit à IGBT Chip overheating protection IGBT IPM 600V 6×30A IGBT IPM 600V 6×30A 6MBP 30RH-060 n Inverter Collector Current vs. Collector-Emitter Voltage 50 40 C [A] 40 Collector Current : I Collector Current : I V C C =15V, T j=125°C 50 C [A] Collector Current vs. Collector-Emitter Voltage V C C =15V, T j =25°C 30 20 10 30 20 10 0 0 0 1 2 3 0 4 1 Collector-Emitter Voltage : V C E [V] 25°C 1 th(j-c) 30 FWD Thermal Resistance : R Forward Current : I F [A] 40 20 10 0 1 2 3 4 10 0 10 -1 IGBT 10 -2 10 Forward Voltage : V F [V] 10 S w itching Loss vs. Collector Current V D C =300V, V C C =15V, T j=25°C V D C =300V, V C C =15V, T j=125°C 3 2 Switching Loss : E E off , E off , E rr [mJ/cycle] 4 on , E off , E rr [mJ/cycle] on 2 Switching Loss : E 3 -1 Pulse W idth : P W [sec] S w itching Loss vs. Collector Current 4 4 [°C/W] 10 0 3 Transient Thermal Resistance Forward Voltage vs. Forward Current 50 T j=125°C 2 Collector-Emitter Voltage : V C E [V] E on 1 E rr 0 E off E on 1 E rr 0 0 10 20 30 40 50 0 10 20 30 40 50 0 6MBP 30RH-060 IGBT IPM 600V 6×30A n Outline Drawing Weight: 50g Specification is subject to change without notice January 99