ETC 6MBP30RH-060

IGBT IPM
600V
6×30A
6MBP 30RH-060
Intelligent Power Module ( RH-Series )
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
( Tc=25°C)
Symbols
DC Bus Voltage
VDC
DC Bus Voltage (surge)
VDC(Surge)
DC Bus Voltage (short operating)
VSC
Collector-Emitter Voltage
VCES
Inverter
Continuous
IC
Collector
1ms
ICP
Current
Duty=56.6%
-IC
Collector Power Dissipation One Transistor
PC
Voltage of Power Supply for Driver
VCC
Input Signal Voltage
VIN
Input Signal Current
IIN
Alarm Signal Voltage
VALM
Alarm Signal Current
IALM
Junction Temperature
TJ
Operating Temperature
TOP
Storage Temperature
Tstg
Isolation Voltage
A.C. 1min.
Viso
Screw Torque
Mounting (M4)
Ratings
Max.
450
500
400
0
600
30
60
30
85
-0.3
20
0
VZ
1
0
VCC
15
150
-20
100
-40
125
2500
2.0
Units
Min.
0
0
V
A
W
V
mA
V
mA
°C
V
Nm
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=30A
-IC=30A
Min.
Typ.
Max.
1.0
2.7
3.5
Units
mA
V
V
Min.
Typ.
2.0
4.0
1.35
1.60
8.0
Max.
5.0
10.0
1.70
1.95
Units
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Symbols
ICCP
ICCN
Input Signal Threshold Voltage
VIN(th)
Input Zener Voltage
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Over Current Detecting Resistance Value
Under Voltage Protection Level
Hysteresis
VZ
TjOH
TjH
IOC
tDOC
tALM
ROC
VUV
VH
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kΩ
Surface Of IGBT Chip
N-Side, (N1-N2 open)
Tj=25°C
1.00
1.25
150
44
1.0
20
54
5.0
2.0
3.7
11.0
0.2
mA
V
°C
64
7.0
12.5
0.8
A
µs
ms
mΩ
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Switching Time
Symbols
tON
tOFF
tRR
Conditions
IC=30A, VDC=300V
Min.
0.5
Typ.
IF=30A, VDC=300V
Max.
Units
3.5
0.5
µs
Max.
1.47
2.10
Units
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
°C/W
6MBP 30RH-060
n Equivalent Circuit
Drivers include following functions
À Over-current protection circuit
Á Amplifier for driver
 Under-voltage protection circuit
à IGBT Chip overheating protection
IGBT IPM
600V
6×30A
IGBT IPM
600V
6×30A
6MBP 30RH-060
n Inverter
Collector Current vs. Collector-Emitter Voltage
50
40
C
[A]
40
Collector Current : I
Collector Current : I
V C C =15V, T j=125°C
50
C
[A]
Collector Current vs. Collector-Emitter Voltage
V C C =15V, T j =25°C
30
20
10
30
20
10
0
0
0
1
2
3
0
4
1
Collector-Emitter Voltage : V C E [V]
25°C
1
th(j-c)
30
FWD
Thermal Resistance : R
Forward Current : I
F
[A]
40
20
10
0
1
2
3
4
10
0
10
-1
IGBT
10
-2
10
Forward Voltage : V F [V]
10
S w itching Loss vs. Collector Current
V D C =300V, V C C =15V, T j=25°C
V D C =300V, V C C =15V, T j=125°C
3
2
Switching Loss : E
E off
, E off , E rr [mJ/cycle]
4
on
, E off , E rr [mJ/cycle]
on
2
Switching Loss : E
3
-1
Pulse W idth : P W [sec]
S w itching Loss vs. Collector Current
4
4
[°C/W]
10
0
3
Transient Thermal Resistance
Forward Voltage vs. Forward Current
50
T j=125°C
2
Collector-Emitter Voltage : V C E [V]
E on
1
E rr
0
E off
E on
1
E rr
0
0
10
20
30
40
50
0
10
20
30
40
50
0
6MBP 30RH-060
IGBT IPM
600V
6×30A
n Outline Drawing
Weight: 50g
Specification is subject to change without notice
January 99