HITACHI 2SA743A

2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SA743
2SA743A
Unit
Collector to base voltage
VCBO
–50
–80
V
Collector to emitter voltage
VCEO
–50
–80
V
Emitter to base voltage
VEBO
–4
–4
V
Collector current
IC
–1
–1
A
Collector power dissipation
PC
0.75
0.75
W
8
8
PC *
1
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743
2SA743A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–50
—
—
–80
—
—
V
I C = –1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50
—
—
–80
—
—
V
I C = –10 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–4
—
—
–4
—
—
V
I E = –1 mA, IC = 0
Collector cutoff current
I CER
—
—
–20
—
—
—
µA
VCE = –50 V, RBE = 1
kΩ
I CER
—
—
—
—
—
–20
VCE = –80 V, RBE = 1
kΩ
60
120
200
60
120
200
VCE = –4 V, IC = –50
mA
hFE
20
—
—
20
—
—
VCE = –4 V, IC = –1 A
(pulse)
Base to emitter voltage VBE
—
–0.65 –1.0
—
–0.65 1.0
V
VCE = –4 V, IC = –50
mA
Collector to emitter
saturation voltage
—
–0.75 –1.5
—
–0.75 –1.5
V
I C = –1 A, IB = –0.1 A
—
120
—
120
MHz
VCE = –4 V, IC = –30
mA
DC current tarnsfer ratio hFE*1
VCE(sat)
Gain bandwidth product f T
Note:
1. The 2SA743 and 2SA743A is grouped by hFE as follows.
B
C
60 to 120
100 to 200
2
—
—
2SA743, 2SA743A
Maximum Collector Dissipation Curve
Maximum Collector Dissipation Curve
8
0.75 W
Collector power dissipation PC (W)
Collector power dissipation PC (W)
0.8
0.6
0.4
0.2
0
50
100
150
Ambient temperature Ta (°C)
Collector current IC (mA)
–160
4
–1.
.2
–1
–0.8
–120
–0.6
–80
–40
–0.4
–0.2 mA
50
100
150
Case temperature TC (°C)
0.8
8 24 6
–2 ––20 –112
–
–10
0.6
–6
–10
–20
–30
–40
–50
Collector to emitter voltage VCE (V)
TC = 25°C
–8
–4
0.4
–2 mA
0.2
IB = 0
IB = 0
0
200
Typical Output Characteristics (2)
TC = 25°C
0
–1.
2
1.0
Collector currnet IC (A)
.6
–1
4
0
200
Typical Output Charactristics (1)
–200
6
0
–1
–2
–3
–4
–5
Collector to emitter voltage VCE (V)
3
2SA743, 2SA743A
DC Currnet Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
180
–1.0
VCE = –4 V
Pulse
°C
–0.2
–0.1
25
–25
TC =
75
Collector current IC (A)
–0.5
–0.05
–0.02
–0.01
0
4
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
DC current transfer ratio hFE
TC = 75°C
VCE = –4 V
Pulse
160
140
25
120
100
80
–25
60
–0.01 –0.02 –0.05 –0.1 –0.2
–0.5 –1.0
Collector current IC (A)
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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