2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SA743 2SA743A Unit Collector to base voltage VCBO –50 –80 V Collector to emitter voltage VCEO –50 –80 V Emitter to base voltage VEBO –4 –4 V Collector current IC –1 –1 A Collector power dissipation PC 0.75 0.75 W 8 8 PC * 1 Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at TC = 25°C. 2SA743, 2SA743A Electrical Characteristics (Ta = 25°C) 2SA743 2SA743A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –50 — — –80 — — V I C = –1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — –80 — — V I C = –10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –4 — — –4 — — V I E = –1 mA, IC = 0 Collector cutoff current I CER — — –20 — — — µA VCE = –50 V, RBE = 1 kΩ I CER — — — — — –20 VCE = –80 V, RBE = 1 kΩ 60 120 200 60 120 200 VCE = –4 V, IC = –50 mA hFE 20 — — 20 — — VCE = –4 V, IC = –1 A (pulse) Base to emitter voltage VBE — –0.65 –1.0 — –0.65 1.0 V VCE = –4 V, IC = –50 mA Collector to emitter saturation voltage — –0.75 –1.5 — –0.75 –1.5 V I C = –1 A, IB = –0.1 A — 120 — 120 MHz VCE = –4 V, IC = –30 mA DC current tarnsfer ratio hFE*1 VCE(sat) Gain bandwidth product f T Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows. B C 60 to 120 100 to 200 2 — — 2SA743, 2SA743A Maximum Collector Dissipation Curve Maximum Collector Dissipation Curve 8 0.75 W Collector power dissipation PC (W) Collector power dissipation PC (W) 0.8 0.6 0.4 0.2 0 50 100 150 Ambient temperature Ta (°C) Collector current IC (mA) –160 4 –1. .2 –1 –0.8 –120 –0.6 –80 –40 –0.4 –0.2 mA 50 100 150 Case temperature TC (°C) 0.8 8 24 6 –2 ––20 –112 – –10 0.6 –6 –10 –20 –30 –40 –50 Collector to emitter voltage VCE (V) TC = 25°C –8 –4 0.4 –2 mA 0.2 IB = 0 IB = 0 0 200 Typical Output Characteristics (2) TC = 25°C 0 –1. 2 1.0 Collector currnet IC (A) .6 –1 4 0 200 Typical Output Charactristics (1) –200 6 0 –1 –2 –3 –4 –5 Collector to emitter voltage VCE (V) 3 2SA743, 2SA743A DC Currnet Transfer Ratio vs. Collector Current Typical Transfer Characteristics 180 –1.0 VCE = –4 V Pulse °C –0.2 –0.1 25 –25 TC = 75 Collector current IC (A) –0.5 –0.05 –0.02 –0.01 0 4 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 Base to emitter voltage VBE (V) DC current transfer ratio hFE TC = 75°C VCE = –4 V Pulse 160 140 25 120 100 80 –25 60 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 Collector current IC (A) Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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