HITACHI 2SB1392

2SB1392
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
1. Base
2. Collector
3. Emitter
12
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–70
V
Collector to emitter voltage
VCEO
–60
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–4
A
Collector peak current
I C(peak)
–8
A
Collector power dissipation
PC
2
W
PC *
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SB1392
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–70
—
—
V
I C = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–60
—
—
V
I C = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–10
µA
VCB = –50 V, IE = 0
—
—
–10
VCE = –50 V, RBE = ∞
60
—
200
VCE = –4 V, IC = –1 A*1
hFE2
35
—
—
VCE = –4 V, IC = –0.1 A*1
Base to emitter voltage
VBE
—
—
–1.0
V
VCE = –4 V, IC = –1 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.0
V
I C = –2.0 A, IB = –0.2 A*1
Base to emitter saturation
voltage
VBE(sat)
—
—
–1.2
V
I C = –2.0 A, IB = –0.2 A*1
I CEO
DC current transfer ratio
hFE1*
2
Notes: 1. Pulse test.
2. The 2SB1392 is grouped by hFE1 as follows.
B
C
60 to 120
100 to 200
Maximum Collector Dissipation Curve
Area of Safe Operation
s
(T C
=2
)
5°C
–0.01
–3
Ta = 25°C
1 Shot pulse
on
150
s
–0.05
–0.02
50
100
Case Temperature TC (°C)
rati
–0.2
–0.1
0m
–0.5
1m
–1.0
Ope
10
–2 IC (max)
=1
20
iC (peak)
PW
Collector Current IC (A)
–5
0
2
–10
DC
Collector power dissipation Pc (W)
30
–10
–30
–100
–300
Collector to emitter Voltage VCE (V)
2SB1392
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
0
–8
–70
1,000
–60
–50
DC current transfer ratio hFE
Collector Current IC (A)
–10
0
–5
–40
–4
–30
–3
–20
–2
–10 mA
–1
TC = 25°C
IB = 0
0
300
TC = 75°C
25°C
–25°C
100
VCE = –4 V
30
10
–0.1
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
–0.3
–1.0
–3
Collector current IC (A)
–10
Collector to emitter saturation voltage
VCE (sat) (V)
Saturation Voltage vs. Collector Current
–1.0
lC/lB = 10
–0.3
–25°C
TC = 25°C
–0.1
25°C
–0.03
–0.01
–0.1
–0.3
–1.0
–3
Collector current IC (A)
–10
Thermal resistance θj-c (°C/W)
Transient Thermal Resistance
10
3
TC = 25°C
1.0
0.3
0.1
1m
10m
100m
1.0
10
100
1000
3
10.0 ± 0.3
2.8 ± 0.2
7.0 ± 0.3
φ 3.2 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
2.5 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220FM
—
Conforms
1.8 g
Cautions
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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