2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 3.5 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current IC –8 A Collector peak current I C(peak) –12 A 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SB1091 Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage –60 — — V I C = –25 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –7 — — V I E = –50 mA, IC = 0 Collector cutoff current I CBO — — –100 µA VCB = –60 V, IE = 0 I CEO — — –10 µA VCE = –50 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation VCE(sat)1 — — –1.5 V I C = –4 A, IB = –8 mA*1 voltage VCE(sat)2 — — –3.0 V I C = –8 A, IB = –80 mA*1 Base to emitter saturation VBE(sat)1 — — –2.0 V I C = –4 A, IB = –8 mA*1 voltage VBE(sat)2 — — –3.5 V I C = –8 A, IB = –80 mA*1 Turn on time t on — 1.0 — µs I C = –4 A, IB1 = –IB2 = –8 mA Storage time t stg — 2.5 — µs Fall time tf — 0.5 — µs Note: Symbol 1. Pulse Test. Maximum Collector Dissipation Curve Area of Safe Operation –20 iC (peak) s –2 0m =1 s –1.0 Op –0.5 –0.2 on ati er 20 IC (max) 1m 40 –5 1 µs 100 µs DC Collector Current IC (A) –10 PW Collector power dissipation Pc (W) 60 Ta = 25°C –0.1 1 Shot pulse –0.05 0 2 VCE = –3 V, IC = –4 A*1 50 100 Case Temperature TC (°C) 150 –0.02 –1 –2 –5 –10 –20 –50 –100 Collector to emitter Voltage VCE (V) 2SB1091 –10 c Collector Current IC (A) –2.5 –2.0 –8 DC Current Transfer Ratio vs. Collector Current 30,000 –1.5 0W –1.0 –6 IB = –0.5 mA –4 Ta = 25°C Pulse –2 0 VCE = –3 V Pulse =4 DC current transfer ratio hFE Typical Output Characteristics P –3.0 10,000 5°C Ta 3,000 °C 25 1,000 100 –5 200 500 VBE (sat) 500 –1.0 –0.5 –0.5 –1.0 –2 –5 Collector current IC (A) –10 Switching Time vs. Collector Current 10 VCE (sat) –0.2 –0.1 –0.1 –0.2 lC/lB = 200 Ta = 25°C Pulse –0.5 –1.0 –2 –5 Collector current IC (A) 5 Switching time t (µs) Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current –10 –2 °C –25 300 30 –0.1 –0.2 –1 –2 –3 –4 –5 Collector to emitter Voltage VCE (V) =7 tstg 2 tf 0.5 0.2 –10 ton 1.0 Ta = 25°C VCC = –30 V IC = 300 IB1 = –500 IB2 0.1 –0.1 –0.2 –0.5 –1.0 –2 –5 Collector current IC (A) –10 3 2SB1091 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 100 30 10 100 ms–10 s 3 1 ms–100 ms 1.0 0.3 TC = 25°C 0.1 0.1 1.0 1.0 10 (s) 10 100 (ms) Time t 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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