HITACHI 2SB1091

2SB1091
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
3.5 kΩ
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–60
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–8
A
Collector peak current
I C(peak)
–12
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SB1091
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
–60
—
—
V
I C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
I E = –50 mA, IC = 0
Collector cutoff current
I CBO
—
—
–100
µA
VCB = –60 V, IE = 0
I CEO
—
—
–10
µA
VCE = –50 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
VCE(sat)1
—
—
–1.5
V
I C = –4 A, IB = –8 mA*1
voltage
VCE(sat)2
—
—
–3.0
V
I C = –8 A, IB = –80 mA*1
Base to emitter saturation
VBE(sat)1
—
—
–2.0
V
I C = –4 A, IB = –8 mA*1
voltage
VBE(sat)2
—
—
–3.5
V
I C = –8 A, IB = –80 mA*1
Turn on time
t on
—
1.0
—
µs
I C = –4 A, IB1 = –IB2 = –8 mA
Storage time
t stg
—
2.5
—
µs
Fall time
tf
—
0.5
—
µs
Note:
Symbol
1. Pulse Test.
Maximum Collector Dissipation Curve
Area of Safe Operation
–20
iC (peak)
s
–2
0m
=1
s
–1.0
Op
–0.5
–0.2
on
ati
er
20
IC (max)
1m
40
–5
1 µs
100 µs
DC
Collector Current IC (A)
–10
PW
Collector power dissipation Pc (W)
60
Ta = 25°C
–0.1 1 Shot pulse
–0.05
0
2
VCE = –3 V, IC = –4 A*1
50
100
Case Temperature TC (°C)
150
–0.02
–1
–2
–5 –10 –20
–50 –100
Collector to emitter Voltage VCE (V)
2SB1091
–10
c
Collector Current IC (A)
–2.5
–2.0
–8
DC Current Transfer Ratio vs.
Collector Current
30,000
–1.5
0W
–1.0
–6
IB = –0.5 mA
–4
Ta = 25°C
Pulse
–2
0
VCE = –3 V
Pulse
=4
DC current transfer ratio hFE
Typical Output Characteristics
P
–3.0
10,000
5°C
Ta
3,000
°C
25
1,000
100
–5
200
500
VBE (sat)
500
–1.0
–0.5
–0.5 –1.0 –2
–5
Collector current IC (A)
–10
Switching Time vs. Collector Current
10
VCE (sat)
–0.2
–0.1
–0.1 –0.2
lC/lB = 200
Ta = 25°C
Pulse
–0.5 –1.0 –2
–5
Collector current IC (A)
5
Switching time t (µs)
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
–10
–2
°C
–25
300
30
–0.1 –0.2
–1
–2
–3
–4
–5
Collector to emitter Voltage VCE (V)
=7
tstg
2
tf
0.5
0.2
–10
ton
1.0
Ta = 25°C
VCC = –30 V
IC = 300 IB1 = –500 IB2
0.1
–0.1 –0.2
–0.5 –1.0 –2
–5
Collector current IC (A)
–10
3
2SB1091
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
100
30
10
100 ms–10 s
3
1 ms–100 ms
1.0
0.3
TC = 25°C
0.1
0.1
1.0
1.0
10 (s)
10
100 (ms)
Time t
4
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.