HITACHI 2SB566K

2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
VCBO
–70
–70
V
Collector to emitter voltage
VCEO
–50
–60
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–4
–4
A
Collector peak current
I C(peak)
–8
–8
A
40
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SB566(K), 2SB566A(K)
Electrical Characteristics (Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–70
—
—
–70
—
—
V
I C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50
—
—
–60
—
—
V
I C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–1
—
—
–1
µA
VCB = –50 V, IE = 0
60
—
200
60
—
200
VCE = –4 V, IC = –1 A
hFE2
35
—
—
35
—
—
VCE = –4 V, IC = –0.1 A
Collector to emitter
saturation voltage
VCE(sat)
—
—
–1.0
—
—
–1.0
V
I C = –2 A, IB = –0.2 A
Base to emitter
saturation voltage
VBE(sat)
—
—
–1.2
—
—
–1.2
V
I C = –2 A, IB = –0.2 A
Gain bandwidth product f T
—
15
—
—
15
—
MHz
VCE = –4 V, IC = –0.5 A
Turn on time
t on
—
0.3
—
—
0.3
—
µs
VCC = –10.5 V
Turn off time
t off
—
3.0
—
—
3.0
—
µs
I C = 10IB1 = –10IB2 =
Storage time
t stg
—
2.5
—
—
2.5
—
µs
–0.5 A
DC current tarnsfer ratio hFE1*
Note:
1. The 2SB566(K) and 2SB566A(K) are grouped by h FE1 as follows.
B
C
60 to 120
100 to 200
2
1
2SB566(K), 2SB566A(K)
Maximum Collector Dissipation Curve
Area Safe Operation
–10
t
ra
TC = 25°C
–2
pe
O
40
C
io
n
Collector current IC (A)
–5 IC max (Continuous)
D
–1.0
–0.5
20
(–50 V, –0.22 A)
2SB566 K
–0.2
0
50
100
150
(–60 V, –0.15 A)
2SB566A K
–0.1
–1
Case temperature TC (°C)
–2
–10
–20
–50 –100
Typical Transfer Characteristics
Typical Output Characteristics
–5
VCE = –4 V
TC = 25°C
–2
Collector current IC (A)
–40
–3
–30
–2
–20
–10 mA
–1
–1.0
–0.5
–0.2
–0.1
25
–25
–70
–60
–50
–4
Collector current IC (A)
–5
–5
Collector to emitter voltage VCE (V)
TC = 75
°C
Collector power dissipation PC (W)
60
–0.05
–0.02
0
–2
–4
IB = 0
–6
–8
Collector to emitter voltage VCE (V)
–10
–0.01
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Base to emitter voltage VBE (V)
3
2SB566(K), 2SB566A(K)
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
VCE = –4V
500
200
100
50
TC = 75°C
25°C
–25°C
20
10
5
–0.01 –0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2
Collector current IC (A)
4
–5
–1.4
Collector to emitter
saturation voltage VCE(sat) (V)
DC current transfer ratio hFE
1,000
–1.2
–1.0
–0.8
IC = 10 IB
TC = 75°C
25°C
–25°C
–0.6
–0.4
–0.2
0
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2
Collector current IC (A)
–5
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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