2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO –70 –70 V Collector to emitter voltage VCEO –50 –60 V Emitter to base voltage VEBO –5 –5 V Collector current IC –4 –4 A Collector peak current I C(peak) –8 –8 A 40 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at TC = 25°C. 2SB566(K), 2SB566A(K) Electrical Characteristics (Ta = 25°C) 2SB566(K) 2SB566A(K) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — –70 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — –60 — — V I C = –50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1 — — –1 µA VCB = –50 V, IE = 0 60 — 200 60 — 200 VCE = –4 V, IC = –1 A hFE2 35 — — 35 — — VCE = –4 V, IC = –0.1 A Collector to emitter saturation voltage VCE(sat) — — –1.0 — — –1.0 V I C = –2 A, IB = –0.2 A Base to emitter saturation voltage VBE(sat) — — –1.2 — — –1.2 V I C = –2 A, IB = –0.2 A Gain bandwidth product f T — 15 — — 15 — MHz VCE = –4 V, IC = –0.5 A Turn on time t on — 0.3 — — 0.3 — µs VCC = –10.5 V Turn off time t off — 3.0 — — 3.0 — µs I C = 10IB1 = –10IB2 = Storage time t stg — 2.5 — — 2.5 — µs –0.5 A DC current tarnsfer ratio hFE1* Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by h FE1 as follows. B C 60 to 120 100 to 200 2 1 2SB566(K), 2SB566A(K) Maximum Collector Dissipation Curve Area Safe Operation –10 t ra TC = 25°C –2 pe O 40 C io n Collector current IC (A) –5 IC max (Continuous) D –1.0 –0.5 20 (–50 V, –0.22 A) 2SB566 K –0.2 0 50 100 150 (–60 V, –0.15 A) 2SB566A K –0.1 –1 Case temperature TC (°C) –2 –10 –20 –50 –100 Typical Transfer Characteristics Typical Output Characteristics –5 VCE = –4 V TC = 25°C –2 Collector current IC (A) –40 –3 –30 –2 –20 –10 mA –1 –1.0 –0.5 –0.2 –0.1 25 –25 –70 –60 –50 –4 Collector current IC (A) –5 –5 Collector to emitter voltage VCE (V) TC = 75 °C Collector power dissipation PC (W) 60 –0.05 –0.02 0 –2 –4 IB = 0 –6 –8 Collector to emitter voltage VCE (V) –10 –0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Base to emitter voltage VBE (V) 3 2SB566(K), 2SB566A(K) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current VCE = –4V 500 200 100 50 TC = 75°C 25°C –25°C 20 10 5 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) 4 –5 –1.4 Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 1,000 –1.2 –1.0 –0.8 IC = 10 IB TC = 75°C 25°C –25°C –0.6 –0.4 –0.2 0 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –5 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. 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