HITACHI 2SC1906

2SC1906
Silicon NPN Epitaxial Planar
Application
• VHF amplifier
• Mixer, Local oscillator
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1906
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
19
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
50
mA
Emitter current
IE
–50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
19
—
—
V
I C = 3 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
2
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 10 V, IE = 0
DC current transfer ratio
hFE
40
—
—
Gain bandwidth product
fT
600
1000
—
MHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
—
1.0
2.0
pF
VCB = 10 V, IE = 0, f = 1 MHz
Collector to emitter saturation
voltage
VCE(sat)
—
0.2
1.0
V
I C = 20 mA, IB = 4 mA
Base time constant
rbb’
—
10
25
ps
VCB = 10 V, IC = 10 mA,
f = 31.8 MHz
Power gain
PG
—
33
—
dB
VCE = 10 V,
I C = 5 mA
f = 45 MHz
—
18
—
dB
VCE = 10 V,
I C = 5 mA
f = 200 MHz
2
•
CC
VCE = 10 V, IC = 10 mA
2SC1906
Typical Output Characteristics
20
140
W
120
12
100
80
8
60
40
4
IB = 20 µA
0
0
100
150
50
Ambient Temperature Ta (°C)
4
16
20
DC Current Transfer Ratio hFE
120
VCE = 10 V
12
8
4
0
12
DC Current Transfer Ratio vs.
Collector Current
20
16
8
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector Current IC (mA)
m
100
160
16
0
30
200
180
=
Collector Current IC (mA)
300
PC
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
0.2
0.4
0.6
0.8
Base to Emitter Voltage VBE (V)
1.0
100
VCE = 10 V
80
60
40
20
0
0.1 0.2
0.5 1.0 2
5 10 20
50 100
Collector Current IC (mA)
3
2SC1906
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product Curve
20
16
Gain Bandwidth Product fT (MHz)
0
90
Collector Current IC (mA)
700
800
1,200
Hz
00
12
fT
M
,0
=1
8
4
600
500
0
4
12
8
16
1,000
800
600
400
200
0
0.1
20
Base Time Constant vs.
Collector Currnt
12
VCB = 10 V
f = 31.8 MHz
50
20
10
5
0.2
0.5
1.0
2
Collector Current IC (mA)
4
Input Suceptance bie (mS)
Base time Constant rbb'•CC (ps)
200
2
0.1
5
0.3
1.0
3
10
30
100
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
100
VCE = 10 V
f = 100 MHz
10
Input Admittance vs. Frequency
2 mA 4 mA 8 mA 12 mA
IC = 1 mA
250
10
200
8
100
6
4
2
0
50
f = 25 MHz
yie = gie+jbie
VCE = 9 V
10
2
4
6
8
Input Conductance gie (mS)
12
2SC1906
Reverse Transfer Admittance vs.
Frequency
Output Admittance vs. Frequency
5
4
12
250
8
4
IC = 1 mA 2
Reverse Transfer Suceptance bre (mS)
Output Suceptance boe (mS)
6
200
3
2
yoe = goe+jboe
VCE = 9 V
100
1
50
f = 25 MHz
1.0
0.2
0.4
0.6
0.8
Output Conductance goe (mS)
0
1.2
0
f = 25 MHz
50
yre = gre+jbre
VCE = 9 V
–0.4
–0.8
200
–1.2
250
IC = 21 mA 8
1
–2.0
–0.10 –0.08 –0.06 –0.04 –0.02
0
Reverse Transfer Conductance gre (mS)
Conversion Gain vs. Local Oscillating
Injection Voltage
IC = 1 mA
0
yfe = gfe+jbfe
VCE = 9 V
2
–20
4
–40
–60 25f =
MH
8
z2
00
15
0
100
80
50
12
25
Conversion Gain CG (dB)
Forward Transfer Suceptance bfe (mS)
2
17
20
–100
4
–1.6
Forward Transfer Admittance vs.
Frequency
–80
100
16
15
VCB = 9 V
IE = 3.5 mA
fs = 200 MHz
fosc = 245 MHz
fIF = 45 MHz
Emitter Inject
14
13
12
11
10
–120
0
20 40 60 80 100 120 140
Forward Transfer Conductance gfe (mS)
0
0.3
0.1
0.2
Injection Voltage Vinj (V)
5
2SC1906
Conversion Gain vs. Emitter Current
Conversion Gain CG (dB)
18
16
14
VCB = 9 V
Vinj = 150 mV
fs = 200 MHz
fosc = 245 MHz
fIF = 45 MHz
Emitter Inject
12
10
8
6
4
0
6
–1
–2 –3 –4 –5 –6
Emitter Current IE (mA)
–7
Unit: mm
4.8 ± 0.3
2.3 Max
0.7
0.60 Max
0.45 ± 0.1
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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