2SC1906 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2 V Collector current IC 50 mA Emitter current IE –50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 19 — — V I C = 3 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 2 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 10 V, IE = 0 DC current transfer ratio hFE 40 — — Gain bandwidth product fT 600 1000 — MHz VCE = 10 V, IC = 10 mA Collector output capacitance Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter saturation voltage VCE(sat) — 0.2 1.0 V I C = 20 mA, IB = 4 mA Base time constant rbb’ — 10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz Power gain PG — 33 — dB VCE = 10 V, I C = 5 mA f = 45 MHz — 18 — dB VCE = 10 V, I C = 5 mA f = 200 MHz 2 • CC VCE = 10 V, IC = 10 mA 2SC1906 Typical Output Characteristics 20 140 W 120 12 100 80 8 60 40 4 IB = 20 µA 0 0 100 150 50 Ambient Temperature Ta (°C) 4 16 20 DC Current Transfer Ratio hFE 120 VCE = 10 V 12 8 4 0 12 DC Current Transfer Ratio vs. Collector Current 20 16 8 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector Current IC (mA) m 100 160 16 0 30 200 180 = Collector Current IC (mA) 300 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 100 VCE = 10 V 80 60 40 20 0 0.1 0.2 0.5 1.0 2 5 10 20 50 100 Collector Current IC (mA) 3 2SC1906 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product Curve 20 16 Gain Bandwidth Product fT (MHz) 0 90 Collector Current IC (mA) 700 800 1,200 Hz 00 12 fT M ,0 =1 8 4 600 500 0 4 12 8 16 1,000 800 600 400 200 0 0.1 20 Base Time Constant vs. Collector Currnt 12 VCB = 10 V f = 31.8 MHz 50 20 10 5 0.2 0.5 1.0 2 Collector Current IC (mA) 4 Input Suceptance bie (mS) Base time Constant rbb'•CC (ps) 200 2 0.1 5 0.3 1.0 3 10 30 100 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) 100 VCE = 10 V f = 100 MHz 10 Input Admittance vs. Frequency 2 mA 4 mA 8 mA 12 mA IC = 1 mA 250 10 200 8 100 6 4 2 0 50 f = 25 MHz yie = gie+jbie VCE = 9 V 10 2 4 6 8 Input Conductance gie (mS) 12 2SC1906 Reverse Transfer Admittance vs. Frequency Output Admittance vs. Frequency 5 4 12 250 8 4 IC = 1 mA 2 Reverse Transfer Suceptance bre (mS) Output Suceptance boe (mS) 6 200 3 2 yoe = goe+jboe VCE = 9 V 100 1 50 f = 25 MHz 1.0 0.2 0.4 0.6 0.8 Output Conductance goe (mS) 0 1.2 0 f = 25 MHz 50 yre = gre+jbre VCE = 9 V –0.4 –0.8 200 –1.2 250 IC = 21 mA 8 1 –2.0 –0.10 –0.08 –0.06 –0.04 –0.02 0 Reverse Transfer Conductance gre (mS) Conversion Gain vs. Local Oscillating Injection Voltage IC = 1 mA 0 yfe = gfe+jbfe VCE = 9 V 2 –20 4 –40 –60 25f = MH 8 z2 00 15 0 100 80 50 12 25 Conversion Gain CG (dB) Forward Transfer Suceptance bfe (mS) 2 17 20 –100 4 –1.6 Forward Transfer Admittance vs. Frequency –80 100 16 15 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 14 13 12 11 10 –120 0 20 40 60 80 100 120 140 Forward Transfer Conductance gfe (mS) 0 0.3 0.1 0.2 Injection Voltage Vinj (V) 5 2SC1906 Conversion Gain vs. Emitter Current Conversion Gain CG (dB) 18 16 14 VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 12 10 8 6 4 0 6 –1 –2 –3 –4 –5 –6 Emitter Current IE (mA) –7 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.