2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 100 mA Collector peak current iC (peak) 200 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V I C = 3 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 3 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µA VCB = 10 V, IE = 0 DC current transfer ratio hFE 40 — — Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 20 mA, IB = 4 mA Gain bandwidth product fT 600 1000 — MHz VCE = 10 V, IC = 10 mA Collector output capacitance Cob — 1.3 — pF VCB = 10 V, IE = 0, f = 1 MHz 2 VCE = 10 V, IC = 10 mA 2SC4367 Typical Output Characteristics 30 600 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 0 24 140 120 100 18 80 12 60 40 6 IB = 20 µA 4 8 12 16 10 Collector to Emitter Voltage VCE (V) 0 50 100 150 Ambient Temperature Ta (°C) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 100 20 Ta = 75 °C 25 –25 Collector Current IC (mA) 50 10 5 2 1 DC Current Transfer Ratio hFE 1,000 VCE = 10 V Pulse VCE = 10 V Pulse 500 Ta = 75°C 25 200 –25 100 50 20 10 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1 2 5 10 20 50 Collector Current IC (mA) 100 3 Collector to Emitter Saturation Voltage vs. Collector Current 10 IC = 10 IB Pulse Ta = –25°C 1.0 25 75 0.1 Gain Bandwidth Product vs. Collector Current 10,000 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SC4367 VCE = 10 V Pulse 1,000 100 0.01 1 2 5 10 20 50 Collector Current IC (mA) 100 1 2 5 10 20 50 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 10 f = 1 MHz IE = 0 5 2 1.0 0.5 0.2 0.1 1 4 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 100 Unit: mm 4.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.5 ± 0.1 10.1 Min 2.3 Max 8.0 ± 0.5 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. 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